STGB4M65DF2

STGB4M65DF2
Mfr. #:
STGB4M65DF2
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGB4M65DF2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGB4M65DF2 maggiori informazioni STGB4M65DF2 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
D2PAK-3
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.6 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
8 A
Pd - Dissipazione di potenza:
68 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
STGB4M65DF2
Corrente continua del collettore Ic Max:
8 A
Marca:
STMicroelectronics
Corrente di dispersione gate-emettitore:
+/- 250 uA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Tags
STGB4, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descrizione Azione Prezzo
STGB4M65DF2
DISTI # 497-16964-2-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.4550
  • 2000:$0.4778
  • 1000:$0.5119
STGB4M65DF2
DISTI # 497-16964-1-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$0.6678
  • 100:$0.8084
  • 10:$1.0370
  • 1:$1.1600
STGB4M65DF2
DISTI # 497-16964-6-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$0.6678
  • 100:$0.8084
  • 10:$1.0370
  • 1:$1.1600
STGB4M65DF2
DISTI # STGB4M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin D2PAK T/R (Alt: STGB4M65DF2)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€0.5239
  • 6000:€0.5999
  • 4000:€0.7049
  • 2000:€0.8809
  • 1000:€1.3729
STGB4M65DF2
DISTI # STGB4M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin D2PAK T/R - Bulk (Alt: STGB4M65DF2)
RoHS: Compliant
Min Qty: 2000
Container: Bulk
Americas - 0
  • 20000:$0.4149
  • 10000:$0.4229
  • 6000:$0.4429
  • 4000:$0.4639
  • 2000:$0.4869
STGB4M65DF2
DISTI # 20AC4194
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$0.4070
STGB4M65DF2
DISTI # 511-STGB4M65DF2
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
RoHS: Compliant
0
  • 1:$1.0600
  • 10:$0.9100
  • 100:$0.6990
  • 500:$0.6180
  • 1000:$0.4880
  • 2000:$0.4330
STGB4M65DF2
DISTI # IGBT2123
STMicroelectronicsIGBT 650V 4A1,6VD2PAKStock DE - 0Stock HK - 0Stock US - 0
  • 2000:$0.6228
  • 4000:$0.6126
  • 6000:$0.5667
Immagine Parte # Descrizione
STGB40H65FB

Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2

IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2-STMICROELECTRONICS

TRENCH GATE FIELD-STOP IGBT, M S
STGB40H65FB

Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB-STMICROELECTRONICS

IGBT BIPO 650V 40A D2PAK
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di STGB4M65DF2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,06 USD
1,06 USD
10
0,91 USD
9,10 USD
100
0,70 USD
69,90 USD
500
0,62 USD
309,00 USD
1000
0,49 USD
488,00 USD
2000
0,43 USD
866,00 USD
Iniziare con
Prodotti più recenti
Top