T2G6003028-FL

T2G6003028-FL
Mfr. #:
T2G6003028-FL
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
T2G6003028-FL Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
T2G6003028-FL maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
T2G
Confezione
Vassoio
Alias ​​parziali
1100007
Tecnologia
GaN SiC
Tipo a transistor
HEMT
Tags
T2G6003028-F, T2G6003, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descrizione Azione Prezzo
T2G6003028-FL
DISTI # 772-T2G6003028-FL
QorvoRF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
RoHS: Compliant
108
  • 1:$157.9200
  • 25:$142.5200
Immagine Parte # Descrizione
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6003028-FS

Mfr.#: T2G6003028-FS

OMO.#: OMO-T2G6003028-FS

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3-318

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL-318

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6001528-SG

Mfr.#: T2G6001528-SG

OMO.#: OMO-T2G6001528-SG-318

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6000528-Q3, EVAL BOAR

Mfr.#: T2G6000528-Q3, EVAL BOAR

OMO.#: OMO-T2G6000528-Q3-EVAL-BOAR-1190

Nuovo e originale
T2G6000528-XCC-1-Q3

Mfr.#: T2G6000528-XCC-1-Q3

OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

Nuovo e originale
T2G6003028-FL-EVB

Mfr.#: T2G6003028-FL-EVB

OMO.#: OMO-T2G6003028-FL-EVB-1190

Nuovo e originale
T2G6003028-FS EVAL BOARD

Mfr.#: T2G6003028-FS EVAL BOARD

OMO.#: OMO-T2G6003028-FS-EVAL-BOARD-1152

RF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di T2G6003028-FL è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
213,78 USD
213,78 USD
10
203,09 USD
2 030,91 USD
100
192,40 USD
19 240,20 USD
500
181,71 USD
90 856,50 USD
1000
171,02 USD
171 024,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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