APT50GN60BG

APT50GN60BG
Mfr. #:
APT50GN60BG
Produttore:
Microchip / Microsemi
Descrizione:
IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
APT50GN60BG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT50GN60BG DatasheetAPT50GN60BG Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
1.5 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
107 A
Pd - Dissipazione di potenza:
366 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
107 A
Altezza:
5.31 mm
Lunghezza:
21.46 mm
Intervallo operativo di temperatura:
- 55 C to + 175 C
Larghezza:
16.26 mm
Marca:
Microchip / Microsemi
Corrente continua del collettore:
107 A
Corrente di dispersione gate-emettitore:
600 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Unità di peso:
1.340411 oz
Tags
APT50GN6, APT50GN, APT50G, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 107A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT50GN60 Series 600 V 107 A 325 nC NPT Trench and Field Stop IGBT - TO-247-3
***rochip
IGBT Fieldstop Low Frequency Single 600 V 50 A TO-247
***nsix Microsemi
Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
***nell
IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available
***ical
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop
Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 80A 260.4W TO247A
***nell
IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ical
Trans IGBT Chip N-CH 600V 76A 268000mW 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 600V, 76A, TO-247AD-3; DC Collector Current: 76A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 268W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of
***ark
Igbt, 600V, 76A, 268W, To-247Ad; Continuous Collector Current:76A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:268W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4069-EPBF..
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***(Formerly Allied Electronics)
G6.2, 600V, 50A, CO-PAK-247AD | Infineon IRGP6650D-EPBF
***i-Key Marketplace
IRGP6650 - DISCRETE IGBT WITH AN
***nell
IGBT, 600V, 80A, TO-247AC-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 306W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***ical
Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 90A 328.9W TO247A
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ment14 APAC
IGBT, HIGH SPEED, 600V, 90A, TO-247A; Transistor Type:IGBT; DC Collector Current:90A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:328.9W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 2A - 4 weeks; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-
Parte # Mfg. Descrizione Azione Prezzo
APT50GN60BG
DISTI # V99:2348_09096449
Microsemi CorporationTrans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247
RoHS: Compliant
118
  • 2500:$3.0640
  • 1000:$3.1360
  • 500:$3.7430
  • 250:$4.2470
  • 100:$4.7510
  • 25:$5.1670
  • 10:$5.3080
  • 1:$6.6580
APT50GN60BG
DISTI # APT50GN60BG-ND
Microsemi CorporationIGBT 600V 107A 366W TO247
RoHS: Compliant
Min Qty: 120
Container: Tube
Temporarily Out of Stock
  • 120:$5.2693
APT50GN60BG
DISTI # 30738095
Microsemi CorporationTrans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247
RoHS: Compliant
118
  • 2500:$3.0640
  • 1000:$3.1360
  • 500:$3.7430
  • 250:$4.2470
  • 100:$4.7510
  • 25:$5.1670
  • 10:$5.3080
  • 2:$6.6580
APT50GN60BG
DISTI # 494-APT50GN60BG
Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
RoHS: Compliant
248
  • 1:$6.7100
  • 10:$5.3900
  • 25:$5.3000
  • 100:$4.9200
  • 250:$4.4400
  • 500:$3.9500
  • 1000:$3.3400
  • 2500:$3.0900
Immagine Parte # Descrizione
LM358LVIPWR

Mfr.#: LM358LVIPWR

OMO.#: OMO-LM358LVIPWR

Operational Amplifiers - Op Amps OP AMP
IR2113PBF

Mfr.#: IR2113PBF

OMO.#: OMO-IR2113PBF

Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
STGWA40H65DFB

Mfr.#: STGWA40H65DFB

OMO.#: OMO-STGWA40H65DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
IR2113PBF

Mfr.#: IR2113PBF

OMO.#: OMO-IR2113PBF-INFINEON-TECHNOLOGIES

IC MOSFET DVR HI/LO SIDE 14-DIP
LM358LVIPWR

Mfr.#: LM358LVIPWR

OMO.#: OMO-LM358LVIPWR-TEXAS-INSTRUMENTS

IC OPAMP GP 2 CIRCUIT 8TSSOP
LMG3411R070RWHT

Mfr.#: LMG3411R070RWHT

OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

600-V 70m GaN with integrated driver and cycle-by-cycle overcurrent protection
STGWA40H65DFB

Mfr.#: STGWA40H65DFB

OMO.#: OMO-STGWA40H65DFB-STMICROELECTRONICS

IGBT TRENCH 650V 80A TO247
B32674D4335K000

Mfr.#: B32674D4335K000

OMO.#: OMO-B32674D4335K000-EPCOS

CAP, 3.3F, 450V, 10%, PP
TLV9064IPWT

Mfr.#: TLV9064IPWT

OMO.#: OMO-TLV9064IPWT-TEXAS-INSTRUMENTS

4 CHANNEL, 10-MHZ, LOW-NOISE, RR
Disponibilità
Azione:
167
Su ordine:
2150
Inserisci la quantità:
Il prezzo attuale di APT50GN60BG è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,71 USD
6,71 USD
10
5,39 USD
53,90 USD
25
5,30 USD
132,50 USD
100
4,92 USD
492,00 USD
250
4,44 USD
1 110,00 USD
500
3,95 USD
1 975,00 USD
1000
3,34 USD
3 340,00 USD
2500
3,09 USD
7 725,00 USD
Iniziare con
Prodotti più recenti
Top