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SIHB20N50E-GE3

SIHB20N50E-GE3
Mfr. #:
SIHB20N50E-GE3
Produttore:
Vishay
Descrizione:
IGBT Transistors MOSFET N-Channel 500V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB20N50E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHB20N50E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ark
Transistor Polarity:N Channel
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB20N50E-GE3
DISTI # SIHB20N50E-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 19A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 1000:$1.8172
  • 500:$2.1547
  • 100:$2.6609
  • 10:$3.2450
  • 1:$3.6300
SIHB20N50E-GE3
DISTI # SIHB20N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 19A 3-Pin D2PAK (Alt: SIHB20N50E-GE3)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    SIHB20N50E-GE3
    DISTI # SIHB20N50E-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 500V 19A 3-Pin D2PAK - Tape and Reel (Alt: SIHB20N50E-GE3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$1.6900
    • 2000:$1.5900
    • 4000:$1.4900
    • 6000:$1.4900
    • 10000:$1.4900
    SIHB20N50E-GE3
    DISTI # 38Y8547    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
    • 1:$1.8700
    • 1000:$1.7700
    • 2000:$1.6600
    • 3000:$1.5600
    SIHB20N50E-GE3
    DISTI # 43Y2395    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 19 A, 500 V, 0.16 ohm, 10 V, 4 V RoHS Compliant: Yes6928
    • 1:$3.3100
    • 10:$2.7400
    • 25:$2.5800
    • 50:$2.4200
    • 100:$2.2600
    • 250:$2.1900
    • 500:$1.9600
    SIHB20N50E-GE3
    DISTI # 78-SIHB20N50E-GE3    		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2736
    • 1:$3.3100
    • 10:$2.7400
    • 100:$2.2600
    • 250:$2.1900
    • 500:$1.9600
    • 1000:$1.6600
    • 2000:$1.5700
    SIHB20N50E-GE3
    DISTI # 2471939    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		6928
    • 1:£3.1600
    • 10:£2.6300
    • 100:£2.1600
    SIHB20N50E-GE3
    DISTI # 2471939    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		6928
    • 1:$5.2400
    • 10:$4.3400
    • 100:$3.5900
    SIHB20N50E-GE3
    DISTI # 2471939RL    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		0
    • 1:$5.2400
    • 10:$4.3400
    • 100:$3.5900
    SIHB20N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      Immagine Parte # Descrizione
      SIHB20N50E-GE3

      Mfr.#: SIHB20N50E-GE3

      OMO.#: OMO-SIHB20N50E-GE3

      		 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
      SIHB20N50E-GE3

      Mfr.#: SIHB20N50E-GE3

      OMO.#: OMO-SIHB20N50E-GE3-VISHAY

      		 IGBT Transistors MOSFET N-Channel 500V
      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
      Inserisci la quantità:
      Il prezzo attuale di SIHB20N50E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,24 USD
      2,24 USD
      10
      2,12 USD
      21,23 USD
      100
      2,01 USD
      201,15 USD
      500
      1,90 USD
      949,90 USD
      1000
      1,79 USD
      1 788,00 USD
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