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FDP100N10

FDP100N10
Mfr. #:
FDP100N10
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 100V N-Channel PowerTrench
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDP100N10 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDP100N10 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
75 A
Rds On - Resistenza Drain-Source:
10 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
208 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
PowerTrench
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FDP100N10
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
115 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
265 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
125 ns
Tempo di ritardo di accensione tipico:
70 ns
Unità di peso:
0.063493 oz
Tags
FDP100, FDP10, FDP1, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDP100N10 Series 100 V 10 mOhm N-Channel PowerTrench Mosfet TO-220AB
***p One Stop Global
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ
***inecomponents.com
100V, 75A, 10m Ohm, NCH POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 100V 75A TO-220
***ser
MOSFETs 100V N-Channel PowerTrench
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
MOSFET,N CH,100V,75A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,100V,75A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FDP100N10
DISTI # V36:1790_06359326		ON Semiconductor100V, 75A, 10M OHM, NCH POWER795
  • 1600:$1.1647
  • 800:$1.3721
FDP100N10
DISTI # FDP100N10-ND		ON SemiconductorMOSFET N-CH 100V 75A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		797In Stock
  • 1600:$1.3398
  • 800:$1.4599
  • 100:$2.0790
  • 10:$2.5870
  • 1:$2.8600
FDP100N10
DISTI # 26052635		ON Semiconductor100V, 75A, 10M OHM, NCH POWER795
  • 795:$1.3721
FDP100N10
DISTI # FDP100N10		ON SemiconductorTrans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: FDP100N10)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.0979
  • 1600:$1.0899
  • 3200:$1.0759
  • 4800:$1.0629
  • 8000:$1.0369
FDP100N10
DISTI # FDP100N10		ON SemiconductorTrans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB (Alt: FDP100N10)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.3900
  • 25:€1.1900
  • 50:€1.0900
  • 100:€1.0900
  • 500:€1.0900
  • 1000:€1.0900
FDP100N10
DISTI # 78M0955		ON SemiconductorFET 100V 10.0 MOHM TO220 / TUBE0
  • 1:$2.6800
  • 10:$2.1800
  • 100:$1.7600
  • 500:$1.5500
  • 1000:$1.3000
  • 2500:$1.2000
  • 10000:$1.1500
FDP100N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		2970
  • 1000:$1.2200
  • 500:$1.2900
  • 100:$1.3400
  • 25:$1.4000
  • 1:$1.5100
FDP100N10
DISTI # 512-FDP100N10		ON SemiconductorMOSFET 100V N-Channel PowerTrench
RoHS: Compliant		1602
  • 1:$2.4800
  • 10:$2.1000
  • 100:$1.6800
  • 500:$1.4800
  • 1000:$1.2200
  • 2500:$1.1400
  • 5000:$1.1000
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OMO.#: OMO-B82789C0104N002-EPCOS

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Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di FDP100N10 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,48 USD
2,48 USD
10
2,10 USD
21,00 USD
100
1,68 USD
168,00 USD
500
1,48 USD
740,00 USD
1000
1,22 USD
1 220,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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