IPP65R099C6XKSA1

Mfr. #:: IPP65R099C6XKSA1
Produttore:: Infineon Technologies
Descrizione:: RF Bipolar Transistors MOSFET N-Ch 700V 38A TO220-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPP65R099C6XKSA1 Scheda dati
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Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: IPP65R099

Confezione: Tubo

Alias parziali: IPP65R099C6 IPP65R099C6XK SP000895218

Unità di peso: 0.211644 oz

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-220-3

Tecnologia: si

Numero di canali: 1 Channel

Tipo a transistor: 1 N-Channel

Id-Continuo-Scarico-Corrente: 38 A

Vds-Drain-Source-Breakdown-Voltage: 700 V

Rds-On-Drain-Source-Resistenza: 99 mOhms

Polarità del transistor: Canale N

Tags: IPP65R09, IPP65R0, IPP65, IPP6, IPP

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP65R099C6XKSA1 Descrizione

***ical: Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 650V, 38A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 38A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 278W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPP65R099C6XKSA1 DISTI # V99:2348_06377448	Infineon Technologies AG	Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	10:$5.4960 1:$6.1600
IPP65R099C6XKSA1 DISTI # IPP65R099C6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 38A TO220 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPP65R099C6XKSA1 DISTI # 30664854	Infineon Technologies AG	Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	10:$5.4960 2:$6.1600
IPP65R099C6XKSA1 DISTI # 34AC1716	Infineon Technologies AG	MOSFET, N-CH, 650V, 38A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:38A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.089ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes	475	1:$6.6200 10:$5.6300 25:$5.3800 50:$5.1300 100:$4.8800 250:$4.6300 500:$4.1500
IPP65R099C6 DISTI # 726-IPP65R099C6	Infineon Technologies AG	MOSFET N-Ch 700V 38A TO220-3 RoHS: Compliant	0	1:$6.6200 10:$5.6300 100:$4.8800 250:$4.6300 500:$4.1500
IPP65R099C6XKSA1 DISTI # 726-IPP65R099C6XKSA1	Infineon Technologies AG	MOSFET N-Ch 700V 38A TO220-3 RoHS: Compliant	0	1:$6.6200 10:$5.6300 100:$4.8800 250:$4.6300 500:$4.1500
IPP65R099C6XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	19341	1000:$3.3600 500:$3.5300 100:$3.6800 25:$3.8400 1:$4.1300
IPP65R099C6XKSA1 DISTI # C1S322000337824	Infineon Technologies AG	Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	10:$5.4960 1:$5.7600
IPP65R099C6XKSA1 DISTI # 2781183	Infineon Technologies AG	MOSFET, N-CH, 650V, 38A, TO-220 RoHS: Compliant	475	1:$7.5500 10:$7.0600 100:$6.2500 250:$5.9100 500:$5.6000 1000:$5.3300
IPP65R099C6XKSA1 DISTI # 2781183	Infineon Technologies AG	MOSFET, N-CH, 650V, 38A, TO-220 RoHS: Compliant	475	1:£6.9500 10:£5.3800 100:£4.6500

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPP65R095C7 OMO.#: OMO-IPP65R095C7	MOSFET HIGH POWER_NEW
	Mfr.#: IPP65R095C7XKSA1 OMO.#: OMO-IPP65R095C7XKSA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPP65R095C7XKSA1 OMO.#: OMO-IPP65R095C7XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V TO-220-3
	Mfr.#: IPP65R099C6 OMO.#: OMO-IPP65R099C6-1190	MOSFET N-Ch 700V 38A TO220-3
	Mfr.#: IPP65R099C6XKSA1 OMO.#: OMO-IPP65R099C6XKSA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 700V 38A TO220-3

Disponibilità

Azione:: Available
Su ordine:: 1500
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Il prezzo attuale di IPP65R099C6XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~5,62 USD~~; ~~5,62 USD~~

10: ~~5,34 USD~~; ~~53,44 USD~~

100: ~~5,06 USD~~; ~~506,25 USD~~

500: ~~4,78 USD~~; ~~2 390,65 USD~~

1000: ~~4,50 USD~~; ~~4 500,00 USD~~

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IPP65R099C6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes