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IXA12IF1200TC

IXA12IF1200TC
Mfr. #:
IXA12IF1200TC
Produttore:
Littelfuse
Descrizione:
IGBT Transistors XPT IGBT Copack
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXA12IF1200TC Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXA12IF1200TC maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
Tecnologia:
si
Pacchetto/custodia:
TO-268-AA-4
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
1.8 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
20 A
Pd - Dissipazione di potenza:
85 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
IXA12IF1200
Confezione:
Tubo
Corrente continua del collettore Ic Max:
13 A
Marca:
IXYS
Corrente di dispersione gate-emettitore:
500 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Nome depositato:
XPT
Parte # Alias:
IXA12IF1200TC-TUB
Unità di peso:
0.176370 oz
Tags
IXA12I, IXA12, IXA1, IXA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 20A 85000mW Medical 3-Pin(2+Tab) D3PAK Tube
***ark
Xpt Igbt Copack, 1200V, 20A, To-268Aa
***Components
IGBT N-Ch 1200V 20A 1.8V XPT TO268AA
***i-Key
IGBT 1200V 20A 85W TO268
***nell
IGBT,1200V,20A,TO-268AA; DC Collector Current:20A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Max:85W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
***ment14 APAC
IGBT,1200V,20A,TO-268AA; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:85W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-268AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:85W
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXA12IF1200TC
DISTI # IXA12IF1200TC-ND		IXYS CorporationIGBT 1200V 20A 85W TO268
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.7173
IXA12IF1200TC
DISTI # 747-IXA12IF1200TC		IXYS CorporationIGBT Transistors XPT IGBT Copack0
  • 30:$5.7200
  • 60:$5.4500
  • 120:$5.3700
  • 270:$4.8400
  • 510:$3.8100
  • 1020:$3.5600
Immagine Parte # Descrizione
IXA12IF1200PB

Mfr.#: IXA12IF1200PB

OMO.#: OMO-IXA12IF1200PB

 IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXA12IF1200HB

Mfr.#: IXA12IF1200HB

OMO.#: OMO-IXA12IF1200HB

 IGBT Transistors XPT IGBT Copack
IXA12IF1200TC

Mfr.#: IXA12IF1200TC

OMO.#: OMO-IXA12IF1200TC

 IGBT Transistors XPT IGBT Copack
IXA12IF1200PZ

Mfr.#: IXA12IF1200PZ

OMO.#: OMO-IXA12IF1200PZ-1190

 Nuovo e originale
IXA12IF1200TC

Mfr.#: IXA12IF1200TC

OMO.#: OMO-IXA12IF1200TC-IXYS-CORPORATION

 IGBT Transistors XPT IGBT Copack
IXA12IF1200HB

Mfr.#: IXA12IF1200HB

OMO.#: OMO-IXA12IF1200HB-IXYS-CORPORATION

 IGBT Transistors XPT IGBT Copack
IXA12IF1200PB

Mfr.#: IXA12IF1200PB

OMO.#: OMO-IXA12IF1200PB-IXYS-CORPORATION

 IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di IXA12IF1200TC è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
30
3,50 USD
105,00 USD
60
3,33 USD
199,80 USD
120
3,28 USD
393,60 USD
270
2,96 USD
799,20 USD
510
2,33 USD
1 188,30 USD
1020
2,18 USD
2 223,60 USD
2520
2,10 USD
5 292,00 USD
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