DMG4407SSS-13

Mfr. #:: DMG4407SSS-13
Produttore:: Diodes Incorporated
Descrizione:: MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: DMG4407SSS-13 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMG4407SSS-13 Datasheet DMG4407SSS-13 Datasheet (P4-P6)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: D

categoria di prodotto: FET - Single

Serie: DMG4407

Confezione: Bobina

Unità di peso: 0.002610 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SO-8

Tecnologia: si

Id-Continuo-Scarico-Corrente: 9.9 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistenza: 17 mOhms

Polarità del transistor: Canale P

Tags: DMG4407, DMG440, DMG44, DMG4, DMG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMG4407SSS-13 Descrizione

***ure Electronics: Single P-Channel 30 V 1.45 W 20.5 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R

***ark: Mosfet, P-Ch, 30V, 9.9A, Soic Rohs Compliant: Yes

***ment14 APAC: MOSFET, P-CH, 30V, 9.9A, SOIC;

***ure Electronics: Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): MOSFET; N Channel; MOS; Trans; 30V; 10.3A; SO8

***S: French Electronic Distributor since 1988

***ure Electronics: Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V

***ment14 APAC: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:30V; On Resistance

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS

***nell: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***(Formerly Allied Electronics): IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC

***ark: N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ure Electronics: Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***ark: MOSFET, P CH, -30V, 0.0133OHM, -9.2A, SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***roFlash: Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8

***ark: Mosfet,+Sch,n Channel,30V,11A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***nell: MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.55W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V

***et Europe: Trans MOSFET N-CH 30V 10.4A 8-Pin SO T/R

***i-Key: MOSFET N-CH 30V 10.4A 8SO

***ment14 APAC: MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.55W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.4A; Power Dissipation Pd:1.55W; Voltage Vgs Max:12V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
DMG4407SSS-13 DISTI # V72:2272_06697730	Zetex / Diodes Inc	Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R RoHS: Compliant	1100	75000:$0.1581 30000:$0.1623 15000:$0.1664 6000:$0.1805 3000:$0.1824 1000:$0.2145 500:$0.2776 250:$0.2806 100:$0.2836 50:$0.4564 25:$0.4615 10:$0.4665 1:$0.5611
DMG4407SSS-13 DISTI # DMG4407SSS-13DICT-ND	Diodes Incorporated	MOSFET P-CH 30V 9.9A 8-SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2485In Stock	1000:$0.2648 500:$0.3427 100:$0.4674 10:$0.6230 1:$0.7400
DMG4407SSS-13 DISTI # DMG4407SSS-13DIDKR-ND	Diodes Incorporated	MOSFET P-CH 30V 9.9A 8-SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2485In Stock	1000:$0.2648 500:$0.3427 100:$0.4674 10:$0.6230 1:$0.7400
DMG4407SSS-13 DISTI # DMG4407SSS-13DITR-ND	Diodes Incorporated	MOSFET P-CH 30V 9.9A 8-SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.2344
DMG4407SSS-13 DISTI # 25756449	Zetex / Diodes Inc	Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R RoHS: Compliant	1100	1000:$0.2145 500:$0.2776 250:$0.2806 100:$0.2836 50:$0.4564 37:$0.4615
DMG4407SSS-13 DISTI # DMG4407SSS-13	Diodes Incorporated	Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R - Tape and Reel (Alt: DMG4407SSS-13) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1699 5000:$0.1619 10000:$0.1539 15000:$0.1469 25000:$0.1439
DMG4407SSS-13 DISTI # 621-DMG4407SSS-13	Diodes Incorporated	MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS: Compliant	2620	1:$0.6000 10:$0.4970 100:$0.3030 1000:$0.2340 2500:$0.2000
DMG4407SSS-13 DISTI # C1S205700543109	Diodes Incorporated	MOSFETs RoHS: Compliant	1100	100:$0.2836 50:$0.4564 25:$0.4615 10:$0.4665

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: DMG4406LSS OMO.#: OMO-DMG4406LSS-1190	Nuovo e originale
	Mfr.#: DMG4406LSS-13-F OMO.#: OMO-DMG4406LSS-13-F-1190	Nuovo e originale
	Mfr.#: DMG4406LSS-13F OMO.#: OMO-DMG4406LSS-13F-1190	Nuovo e originale
	Mfr.#: DMG4407SSS OMO.#: OMO-DMG4407SSS-1190	Nuovo e originale
	Mfr.#: DMG4407SSS-13-F OMO.#: OMO-DMG4407SSS-13-F-1190	Nuovo e originale
	Mfr.#: DMG4406LSS-13 OMO.#: OMO-DMG4406LSS-13-DIODES	IGBT Transistors MOSFET N-Ch ENH 30V 11mOhm 10.3A 10V VGS
	Mfr.#: DMG4407SSS-13 OMO.#: OMO-DMG4407SSS-13-DIODES	MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K

Disponibilità

Azione:: Available
Su ordine:: 5000
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Il prezzo attuale di DMG4407SSS-13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,22 USD~~; ~~0,22 USD~~

10: ~~0,21 USD~~; ~~2,05 USD~~

100: ~~0,19 USD~~; ~~19,43 USD~~

500: ~~0,18 USD~~; ~~91,75 USD~~

1000: ~~0,17 USD~~; ~~172,70 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

DMG4407 3
DMG440 7
DMG44 38
DMG4 72
DMG 404

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DMG4407SSS-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes