BFP 740ESD H6327

Mfr. #:: BFP 740ESD H6327
Produttore:: Infineon Technologies
Descrizione:: RF Bipolar Transistors RF BIP TRANSISTORS
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BFP 740ESD H6327 Scheda dati
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Maggiori informazioni:: BFP 740ESD H6327 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor RF (BJT)

Serie: BFP740

Confezione: Bobina

Alias parziali: BFP740ESDH6327XT BFP740ESDH6327XTSA1 SP000785486

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SOT343-3

Tecnologia: SiGe

Tipo a transistor: Bipolare

Pd-Power-Dissipazione: 160 mW

Massima temperatura di esercizio: + 150 C

Frequenza operativa: 45 GHz

Collettore-Emettitore-Tensione-VCEO-Max: 4.2 V

Corrente-Collettore-Continuo: 45 mA

Tags: BFP740ESDH, BFP740ES, BFP740E, BFP740, BFP74, BFP7, BFP

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP 740ESD H6327 Maggiori informazioni

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

BFPx4 RF Transistors: Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BFP740ESDH6327XTSA1 DISTI # V72:2272_06384751	Infineon Technologies AG	Trans RF BJT NPN 4.2V 0.045A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	3010	3000:$0.1836 1000:$0.2039 500:$0.2761 250:$0.2992 100:$0.3103 25:$0.4082 10:$0.5176 1:$0.5916
BFP740ESDH6327XTSA1 DISTI # V36:1790_06384751	Infineon Technologies AG	Trans RF BJT NPN 4.2V 0.045A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	0
BFP740ESDH6327XTSA1 DISTI # BFP740ESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 45GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1323In Stock	1000:$0.2080 500:$0.2692 100:$0.3426 10:$0.4590 1:$0.5400
BFP740ESDH6327XTSA1 DISTI # BFP740ESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 45GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1323In Stock	1000:$0.2080 500:$0.2692 100:$0.3426 10:$0.4590 1:$0.5400
BFP740ESDH6327XTSA1 DISTI # BFP740ESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 45GHZ SOT343 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.1521 15000:$0.1604 6000:$0.1723 3000:$0.1841
BFP 740ESD H6327 DISTI # 30577724	Infineon Technologies AG	Trans GP BJT NPN 4.2V 0.045A 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	3975	1000:$0.3978 500:$0.4157 100:$0.5049 50:$0.5470 35:$0.7484
BFP740ESDH6327XTSA1 DISTI # 26195572	Infineon Technologies AG	Trans RF BJT NPN 4.2V 0.045A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	3020	3000:$0.1836 1000:$0.2039 500:$0.2761 250:$0.2992 100:$0.3047 43:$0.4082
BFP740ESDH6327XTSA1 DISTI # SP000785486	Infineon Technologies AG	Trans GP BJT NPN 4.2V 0.045A 4-Pin SOT-343 T/R (Alt: SP000785486) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 6000	30000:€0.1569 18000:€0.1689 12000:€0.1829 6000:€0.1999 3000:€0.2439
BFP 740ESD H6327 DISTI # BFP 740ESD H6327	Infineon Technologies AG	Trans GP BJT NPN 4.2V 0.045A 4-Pin(3+Tab) SOT-343 T/R (Alt: BFP 740ESD H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.1504 75000:$0.1523 30000:$0.1543 15000:$0.1563 9000:$0.1605 6000:$0.1650 3000:$0.1697
BFP740ESDH6327XTSA1 DISTI # BFP740ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.2V 0.045A 4-Pin SOT-343 T/R - Tape and Reel (Alt: BFP740ESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1499 18000:$0.1529 12000:$0.1589 6000:$0.1649 3000:$0.1709
BFP740ESDH6327XTSA1 DISTI # 79X1324	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, 4.2V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.2V,Transition Frequency ft:45GHz,Power Dissipation Pd:160mW,DC Collector Current:45mA,DC Current Gain hFE:160hFE,Product Range:- RoHS Compliant: Yes	1443	1000:$0.2040 500:$0.2240 250:$0.2440 100:$0.2650 50:$0.3210 25:$0.3770 10:$0.4330 1:$0.5250
BFP 740ESD H6327 DISTI # 726-BFP740ESDH6327XT	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	4472	1:$0.5200 10:$0.4290 100:$0.2620 1000:$0.2020 3000:$0.1730
BFP740ESDH6327XTSA1 DISTI # 8275126P	Infineon Technologies AG	LOW NOISE SIGE RF TRANSISTOR NPN SOT343, RL	4350	250:£0.1380
BFP740ESDH6327	Infineon Technologies AG		2232
BFP740ESDH6327XTSA1 DISTI # 2432736	Infineon Technologies AG	TRANS, RF, NPN, 4.7V, 45GHZ, SOT-343-4 RoHS: Compliant	2279	3000:$0.2670 1000:$0.3110 100:$0.4030 10:$0.6600 1:$0.8000
BFP740ESDH6327XTSA1 DISTI # 2432736RL	Infineon Technologies AG	TRANS, RF, NPN, 4.7V, 45GHZ, SOT-343-4 RoHS: Compliant	0	3000:$0.2670 1000:$0.3110 100:$0.4030 10:$0.6600 1:$0.8000
BFP740ESDH6327XTSA1 DISTI # 2432736	Infineon Technologies AG	TRANS, RF, NPN, 4.7V, 45GHZ, SOT-343-4	1473	500:£0.1580 250:£0.1810 100:£0.2040 25:£0.3570 5:£0.3790
BFP740ESDH6327XTSA1 DISTI # XSKDRABV0042809	Infineon Technologies AG	RoHS: Compliant	9000 in Stock0 on Order	9000:$0.2800 3000:$0.3000

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: BFP 740ESD H6327

OMO.#: OMO-BFP-740ESD-H6327

RF Bipolar Transistors RF BIP TRANSISTORS

Mfr.#: BFP 740ESD

OMO.#: OMO-BFP-740ESD-INFINEON-TECHNOLOGIES

Nuovo e originale

Mfr.#: BFP 740ESD H6327

OMO.#: OMO-BFP-740ESD-H6327-317

RF Bipolar Transistors RF BIP TRANSISTORS

Disponibilità

Azione:: Available
Su ordine:: 1500
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Il prezzo attuale di BFP 740ESD H6327 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,23 USD~~; ~~0,23 USD~~

10: ~~0,21 USD~~; ~~2,14 USD~~

100: ~~0,20 USD~~; ~~20,30 USD~~

500: ~~0,19 USD~~; ~~95,85 USD~~

1000: ~~0,18 USD~~; ~~180,50 USD~~

Iniziare con

BFP740ESDH 4
BFP740ES 6
BFP740E 9
BFP740 33
BFP74 34
BFP7 65
BFP 692

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BFP 740ESD H6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes