FDMC15N06

FDMC15N06
Mfr. #:
FDMC15N06
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET UltraFET 55V, 15A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMC15N06 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
Power-33-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
55 V
Id - Corrente di scarico continua:
15 A
Rds On - Resistenza Drain-Source:
75 mOhms
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
35 W
Configurazione:
Separare
Nome depositato:
UltraFET
Confezione:
Bobina
Altezza:
0.8 mm
Lunghezza:
3.3 mm
Serie:
FDMC15N06
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET a canale N
Larghezza:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
5 S
Tempo di caduta:
22 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
36.5 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
22.5 ns
Tempo di ritardo di accensione tipico:
9.5 ns
Unità di peso:
0.007055 oz
Tags
FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel UltraFET Power MOSFET 55V, 15A, 90mΩ
***el Electronic
Memory 3 (168 Hours) Volatile Tape & Reel (TR) SRAM - Asynchronous 44-TSOP (0.400, 10.16mm Width) 4Mb 512K x 8 SRAM 0°C~70°C TA 3V~3.6V IC SRAM 4M PARALLEL 44TSOP II
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
***ure Electronics
Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 45
***ponent Stockers USA
19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ser
MOSFETs 19a, 55V N-Channel UltraFET
***et
PWR MOS ULTRAFET 55V/19A/0.070OHMS N-CHANNEL TO-252AA
***ponent Stockers USA
19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***i-Key
MOSFET N-CH 55V 19A DPAK
***ser
MOSFETs 19a, 55V N-Channel UltraFET
***Yang
PWR MOS ULTRAFET 55V/15A/0.090OHMS N-CHANNEL TO-252AA - Bulk
***i-Key Marketplace
MOSFET N-CH 55V 15A TO252AA
***ser
MOSFETs 15a, 55V N-Channel UltraFET
***el Nordic
Contact for details
Parte # Mfg. Descrizione Azione Prezzo
FDMC15N06
DISTI # 26637152
ON SemiconductorFET 55V 90.0 MOHM MLP336000
  • 3000:$0.5711
FDMC15N06
DISTI # FDMC15N06CT-ND
ON SemiconductorMOSFET N-CH 55V 2.4A MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMC15N06
    DISTI # FDMC15N06DKR-ND
    ON SemiconductorMOSFET N-CH 55V 2.4A MLP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMC15N06
      DISTI # FDMC15N06TR-ND
      ON SemiconductorMOSFET N-CH 55V 2.4A MLP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.6930
      FDMC15N06
      DISTI # V36:1790_06338153
      ON SemiconductorFET 55V 90.0 MOHM MLP330
        FDMC15N06
        DISTI # FDMC15N06
        ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC15N06)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel
        Americas - 0
        • 3000:$0.5879
        • 6000:$0.5839
        • 12000:$0.5759
        • 18000:$0.5689
        • 30000:$0.5549
        FDMC15N06
        DISTI # FDMC15N06
        ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R - Bulk (Alt: FDMC15N06)
        RoHS: Not Compliant
        Min Qty: 500
        Container: Bulk
        Americas - 0
        • 500:$0.6789
        • 502:$0.6749
        • 1002:$0.6659
        • 2500:$0.6579
        • 5000:$0.6409
        FDMC15N06
        DISTI # FDMC15N06
        ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R (Alt: FDMC15N06)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel
        Europe - 0
        • 3000:€1.1849
        • 6000:€0.9219
        • 12000:€0.7649
        • 18000:€0.6449
        • 30000:€0.5979
        FDMC15N06
        DISTI # 64R3010
        ON SemiconductorFET 55V 90.0 MOHM MLP33 / REEL0
        • 30000:$0.5720
        • 18000:$0.5850
        • 12000:$0.6080
        • 6000:$0.6750
        • 3000:$0.7430
        • 1:$0.7740
        FDMC15N06
        DISTI # 512-FDMC15N06
        ON SemiconductorMOSFET UltraFET 55V, 15A
        RoHS: Compliant
        998
        • 1:$1.4800
        • 10:$1.2600
        • 100:$0.9680
        • 500:$0.8560
        • 1000:$0.6750
        • 3000:$0.5990
        • 9000:$0.5770
        FDMC15N06Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        19596
        • 1000:$0.6600
        • 500:$0.6900
        • 100:$0.7200
        • 25:$0.7500
        • 1:$0.8100
        FDMC15N06Fairchild Semiconductor Corporation 51000
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          Disponibilità
          Azione:
          998
          Su ordine:
          2981
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