FS215R04A1E3DBOMA1

FS215R04A1E3DBOMA1
Mfr. #:
FS215R04A1E3DBOMA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FS215R04A1E3DBOMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Confezione:
Vassoio
Marca:
Tecnologie Infineon
Sensibile all'umidità:
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
16
sottocategoria:
IGBT
Parte # Alias:
FS215R04A1E3D SP001002716
Tags
FS21, FS2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
FS215R04 - IGBT MODULE
***et
HYBRID PACK 1
***ineon
HybridPACK 1 with the ultra thin wafer 400Vces chipset is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications. The chipset is optimized for working voltages of 100V to about 250V and has lowest conduction and switching losses. It reduces the chip power losses up to 25% compared to the same chip size with latest 650Vces IGBT technology. | Summary of Features: Complete 3-phase Six-Pack with NTC in one compact module; High efficient 400Vces Ultra Thin Wafer Trench-Field-Stop IGBT3 with matching 400V Emitter Controlled 3 diode.; Increased diode current capability optimized for generator mode in hybrid electric vehicles; 25% reduced gate charge compared to IGBT3 650V reduces gate driver power losses; Enhanced wire bonding; Rugged Al 2O 3 ceramic for automotive applications with high thermal cycle requirements; Copper base plate for optimized cooling | Benefits: High efficient system approach for DCL voltages up to 200V; High reliability; Same mounting as HybridPACK1 modules with 650V chipset (modular approach) | Target Applications: hybrid; cav; drives
Parte # Mfg. Descrizione Azione Prezzo
FS215R04A1E3DBOMA1
DISTI # FS215R04A1E3DBOMA1-ND
Infineon Technologies AGIGBT MODULES
RoHS: Compliant
Min Qty: 16
Container: Tray
Temporarily Out of Stock
  • 16:$263.4050
FS215R04A1E3DBOMA1
DISTI # FS215R04A1E3DBOMA1
Infineon Technologies AGHYBRID PACK 1 - Trays (Alt: FS215R04A1E3DBOMA1)
RoHS: Compliant
Min Qty: 16
Container: Tray
Americas - 0
    FS215R04A1E3DBOMA1
    DISTI # FS215R04A1E3DBOMA1
    Infineon Technologies AGHYBRID PACK 1 - Bulk (Alt: FS215R04A1E3DBOMA1)
    RoHS: Compliant
    Min Qty: 2
    Container: Bulk
    Americas - 0
    • 20:$222.8900
    • 10:$226.9900
    • 6:$234.8900
    • 4:$243.6900
    • 2:$252.7900
    FS215R04A1E3DBOMA1
    DISTI # 726-FS215R04A1E3DBOM
    Infineon Technologies AGIGBT Modules
    RoHS: Compliant
    0
    • 1:$280.8100
    • 5:$274.0600
    • 10:$267.2500
    • 25:$263.5100
    FS215R04A1E3DBOMA1Infineon Technologies AGInsulated Gate Bipolar Transistor
    RoHS: Not Compliant
    16
    • 1000:$230.9100
    • 500:$243.0600
    • 100:$253.0500
    • 25:$263.9000
    • 1:$284.1900
    Immagine Parte # Descrizione
    FS215R04A1E3DBOMA1

    Mfr.#: FS215R04A1E3DBOMA1

    OMO.#: OMO-FS215R04A1E3DBOMA1

    IGBT Modules
    FS215R04A1E3D

    Mfr.#: FS215R04A1E3D

    OMO.#: OMO-FS215R04A1E3D-1190

    Nuovo e originale
    FS215R04A1E3DBOMA1

    Mfr.#: FS215R04A1E3DBOMA1

    OMO.#: OMO-FS215R04A1E3DBOMA1-INFINEON-TECHNOLOGIES

    IGBT MODULES
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di FS215R04A1E3DBOMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    280,81 USD
    280,81 USD
    5
    274,06 USD
    1 370,30 USD
    10
    267,25 USD
    2 672,50 USD
    25
    263,51 USD
    6 587,75 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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