AS4C16M16D1A-5TANTR

AS4C16M16D1A-5TANTR
Mfr. #:
AS4C16M16D1A-5TANTR
Produttore:
Alliance Memory
Descrizione:
DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C16M16D1A-5TANTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AS4C16M16D1A-5TANTR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Serie:
AS4C16M16D1A
Confezione:
Bobina
Marca:
Memoria dell'Alleanza
Sensibile all'umidità:
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
1000
sottocategoria:
Memoria e archiviazione dati
Tags
AS4C16M16D1A, AS4C16M16D1, AS4C16M16D, AS4C16M1, AS4C16M, AS4C16, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Parte # Mfg. Descrizione Azione Prezzo
AS4C16M16D1A-5TANTRAlliance Memory IncDDR SDRAM 256M 16M x 16 2.5V 66pin TSOP II1000
    Immagine Parte # Descrizione
    AS4C16M16D1-5BINTR

    Mfr.#: AS4C16M16D1-5BINTR

    OMO.#: OMO-AS4C16M16D1-5BINTR

    DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
    AS4C16M16D2-25BIN

    Mfr.#: AS4C16M16D2-25BIN

    OMO.#: OMO-AS4C16M16D2-25BIN

    DRAM
    AS4C16M16D1-5TCN

    Mfr.#: AS4C16M16D1-5TCN

    OMO.#: OMO-AS4C16M16D1-5TCN

    DRAM 256Mb, 3.3V, 200Mhz 16M x 16 DDR
    AS4C16M16S-6TANTR

    Mfr.#: AS4C16M16S-6TANTR

    OMO.#: OMO-AS4C16M16S-6TANTR

    DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
    AS4C16M16S-6TINTR

    Mfr.#: AS4C16M16S-6TINTR

    OMO.#: OMO-AS4C16M16S-6TINTR

    DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
    AS4C16M16S7TCN

    Mfr.#: AS4C16M16S7TCN

    OMO.#: OMO-AS4C16M16S7TCN-1190

    Nuovo e originale
    AS4C16M16D2-25BCNTR

    Mfr.#: AS4C16M16D2-25BCNTR

    OMO.#: OMO-AS4C16M16D2-25BCNTR-ALLIANCE-MEMORY

    IC DRAM 256M PARALLEL 84TFBGA
    AS4C16M16SA-6BINTR

    Mfr.#: AS4C16M16SA-6BINTR

    OMO.#: OMO-AS4C16M16SA-6BINTR-ALLIANCE-MEMORY

    DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
    AS4C16M16S-6TCN

    Mfr.#: AS4C16M16S-6TCN

    OMO.#: OMO-AS4C16M16S-6TCN-ALLIANCE-MEMORY

    DRAM 256M SDRAM 16M X 16 166MHz
    AS4C16M16S-6TIN

    Mfr.#: AS4C16M16S-6TIN

    OMO.#: OMO-AS4C16M16S-6TIN-ALLIANCE-MEMORY

    DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di AS4C16M16D1A-5TANTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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