ZXMN2A02N8TA

Mfr. #:: ZXMN2A02N8TA
Produttore:: Diodes Incorporated
Descrizione:: Darlington Transistors MOSFET 20V N Chnl UMOS
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: ZXMN2A02N8TA Scheda dati
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HTML Datasheet:: ZXMN2A02N8TA Datasheet ZXMN2A02N8TA Datasheet (P4-P6)ZXMN2A02N8TA Datasheet (P7-P8)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: 30000ZETEX

categoria di prodotto: FET - Single

Serie: ZXMN2A

Confezione: Bobina

Unità di peso: 0.002610 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SO-8

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Singola Quad Scarico Tripla Sorgente

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 1.56 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 10 ns

Ora di alzarsi: 10 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: 10.2 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistenza: 40 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 33.3 ns

Tempo di ritardo all'accensione tipico: 7.9 ns

Modalità canale: Aumento

Tags: ZXMN2A02N, ZXMN2A02, ZXMN2A0, ZXMN2A, ZXMN2, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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ZXMN2A02N8TA Descrizione

***C: Trans MOSFET N-CH 20V 10.2A 8-Pin SOIC T/R Trans MOSFET N-CH 20V 10.2A 8-Pin SOIC T/R

***ure Electronics: ZXMN2A02 Series N-Channel 20 V 10.2 A 2.5 W Mosfet - SOIC-8

***S: French Electronic Distributor since 1988

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

***Yang: Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel

***enic: 20V 11A 14m´Î@4.5V11A 2.5W 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Source Voltage Vds:-20V; On Resistance

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

***nell: MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V

***(Formerly Allied Electronics): IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC

***nell: N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8

***ponent Sense: Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

***enic: 20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***itex: Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8

***ure Electronics: Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R

***enic: 20V 8A 2W 18m´Î@4.5V8.3A 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: DUAL N CHANNEL MOSFET, 20V, SOIC; Transi; DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.015ohm; Rds(on) Test Voltage Vgs:12V

***ark: Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No

***et Japan: Transistor MOSFET Array Dual P-CH 20V 9A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 20 V 0.018 Ohm 42 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Dual P-Channel MOSFET

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V;

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
ZXMN2A02N8TA DISTI # ZXMN2A02N8TR-ND	Diodes Incorporated	MOSFET N-CH 20V 8.3A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	500In Stock	500:$0.8841
ZXMN2A02N8TA DISTI # ZXMN2A02N8CT-ND	Diodes Incorporated	MOSFET N-CH 20V 8.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	249In Stock	100:$1.1023 10:$1.4140 1:$1.5800
ZXMN2A02N8TA DISTI # ZXMN2A02N8DKR-ND	Diodes Incorporated	MOSFET N-CH 20V 8.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
ZXMN2A02N8TA DISTI # ZXMN2A02N8DI-ND	Diodes Incorporated	MOSFET N-CH 20V 8.3A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	500:$0.8841
ZXMN2A02N8TA DISTI # 522-ZXMN2A02N8TA	Diodes Incorporated	MOSFET 20V N Chnl UMOS RoHS: Compliant	416	1:$1.3900 10:$1.1900 100:$0.9100 500:$0.8040
ZXMN2A02N8TA	Zetex / Diodes Inc		356
ZXMN2A02N8TA	Zetex / Diodes Inc		7159

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: ZXMN2A03E6TA OMO.#: OMO-ZXMN2A03E6TA	MOSFET N Channel
	Mfr.#: ZXMN2A04DN8TC OMO.#: OMO-ZXMN2A04DN8TC	MOSFET Dl 20V N Chnl UMOS
	Mfr.#: ZXMN2A01E6 OMO.#: OMO-ZXMN2A01E6-1190	Nuovo e originale
	Mfr.#: ZXMN2A02N8TC OMO.#: OMO-ZXMN2A02N8TC-1190	Nuovo e originale
	Mfr.#: ZXMN2A02X8TA OMO.#: OMO-ZXMN2A02X8TA-DIODES	MOSFET N-CH 20V 6.2A 8-MSOP
	Mfr.#: ZXMN2A02X8TC OMO.#: OMO-ZXMN2A02X8TC-DIODES	MOSFET N-CH 20V 6.2A 8-MSOP
	Mfr.#: ZXMN2A14F OMO.#: OMO-ZXMN2A14F-1190	Nuovo e originale
	Mfr.#: ZXMN2A14FTA OMO.#: OMO-ZXMN2A14FTA-DIODES	Nuovo e originale
	Mfr.#: ZXMN2A14FTC OMO.#: OMO-ZXMN2A14FTC-1190	Nuovo e originale
	Mfr.#: ZXMN2A01E6TA OMO.#: OMO-ZXMN2A01E6TA-DIODES	Darlington Transistors MOSFET 20V N-Chnl UMOS

Disponibilità

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Su ordine:: 5000
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Il prezzo attuale di ZXMN2A02N8TA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,65 USD~~; ~~0,65 USD~~

10: ~~0,61 USD~~; ~~6,14 USD~~

100: ~~0,58 USD~~; ~~58,17 USD~~

500: ~~0,55 USD~~; ~~274,70 USD~~

1000: ~~0,52 USD~~; ~~517,10 USD~~

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ZXMN2A02N8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes