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IRF3205LPBF

IRF3205LPBF
Mfr. #:
IRF3205LPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET MOSFT 55V 110A 8mOhm 97.3nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF3205LPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3205LPBF DatasheetIRF3205LPBF Datasheet (P4-P6)IRF3205LPBF Datasheet (P7-P9)IRF3205LPBF Datasheet (P10-P11)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-262-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
55 V
Id - Corrente di scarico continua:
110 A
Rds On - Resistenza Drain-Source:
8 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
97.3 nC
Pd - Dissipazione di potenza:
200 W
Configurazione:
Separare
Confezione:
Tubo
Altezza:
9.45 mm
Lunghezza:
10.2 mm
Tipo di transistor:
1 N-Channel
Larghezza:
4.5 mm
Marca:
Tecnologie Infineon
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001564458
Unità di peso:
0.084199 oz
Tags
IRF3205, IRF320, IRF32, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***roFlash
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
IRF3205LPBF
DISTI # 30534295		Infineon Technologies AGTrans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		212
  • 100:$0.5142
  • 23:$0.5313
IRF3205LPBF
DISTI # IRF3205LPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 110A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		1116In Stock
  • 1000:$0.6394
  • 500:$0.8099
  • 100:$1.0443
  • 10:$1.3210
  • 1:$1.4900
IRF3205LPBF
DISTI # C1S322000479829		Infineon Technologies AGTrans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		212
  • 100:$0.8320
  • 50:$0.9900
  • 25:$1.1100
  • 5:$1.5200
IRF3205LPBF
DISTI # IRF3205LPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF3205LPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.4459
  • 2000:$0.4299
  • 4000:$0.4139
  • 6000:$0.4009
  • 10000:$0.3929
IRF3205LPBF
DISTI # SP001564458		Infineon Technologies AGTrans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-262 (Alt: SP001564458)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.0969
  • 10:€0.9369
  • 25:€0.9349
  • 50:€0.9319
  • 100:€0.7129
  • 500:€0.6309
  • 1000:€0.4969
IRF3205LPBF
DISTI # 91Y4727		Infineon Technologies AGMOSFET, N-CH, 55V, 110A, TO-262-3,Transistor Polarity:N Channel,Continuous Drain Current Id:110A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes14
  • 1:$1.2800
  • 10:$1.0900
  • 100:$0.8340
  • 500:$0.7370
  • 1000:$0.5820
  • 2500:$0.5160
  • 10000:$0.4970
IRF3205LPBF
DISTI # 70018185		Infineon Technologies AGIRF3205LPBF N-channel MOSFET Transistor,110 A,55 V,3-Pin TO-262
RoHS: Compliant		0
  • 500:$2.8400
IRF3205LPBF
DISTI # 942-IRF3205LPBF		Infineon Technologies AGMOSFET MOSFT 55V 110A 8mOhm 97.3nC
RoHS: Compliant		1082
  • 1:$1.2800
  • 10:$1.0900
  • 100:$0.8340
  • 500:$0.7370
  • 1000:$0.5820
  • 2000:$0.5160
  • 10000:$0.4970
IRF3205LPBF
DISTI # 9075066		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 55V 110A TO262, PK540
  • 10:£0.8770
  • 100:£0.6980
  • 500:£0.6060
  • 1000:£0.5030
  • 2500:£0.4710
IRF3205LPBF
DISTI # IRF3205LPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,110A,200W,TO26298
  • 1:$1.3400
  • 3:$1.2200
  • 10:$1.0200
  • 100:$0.9100
IRF3205LPBFInternational Rectifier 
RoHS: Compliant		Europe - 100
    IRF3205LPBF
    DISTI # 2579972    		Infineon Technologies AGMOSFET, N-CH, 55V, 110A, TO-262-3
    RoHS: Compliant    		14
    • 1:$2.1000
    • 10:$1.8300
    • 100:$1.4900
    • 500:$1.2600
    • 1000:$1.0900
    IRF3205LPBF
    DISTI # 2579972    		Infineon Technologies AGMOSFET, N-CH, 55V, 110A, TO-262-3
    RoHS: Compliant    		14
    • 5:£0.8770
    • 25:£0.8050
    • 100:£0.6310
    • 250:£0.6290
    • 500:£0.6270
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    Disponibilità
    Azione:
    15
    Su ordine:
    1998
    Inserisci la quantità:
    Il prezzo attuale di IRF3205LPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,27 USD
    1,27 USD
    10
    1,08 USD
    10,80 USD
    100
    0,83 USD
    83,40 USD
    500
    0,74 USD
    368,50 USD
    1000
    0,58 USD
    582,00 USD
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