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MJE5851G

MJE5851G
Mfr. #:
MJE5851G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT 8A 350V 80W PNP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MJE5851G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJE5851G DatasheetMJE5851G Datasheet (P4-P6)MJE5851G Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Polarità del transistor:
PNP
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
350 V
Collettore-tensione di base VCBO:
400 V
Emettitore-tensione di base VEBO:
6 V
Tensione di saturazione collettore-emettitore:
2 V
Corrente massima del collettore CC:
8 A
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Serie:
MJE5851
Altezza:
15.75 mm
Lunghezza:
10.53 mm
Confezione:
Tubo
Larghezza:
4.83 mm
Marca:
ON Semiconductor
Corrente continua del collettore:
8 A
Guadagno base/collettore DC hfe min:
15
Pd - Dissipazione di potenza:
80 W
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
50
sottocategoria:
transistor
Unità di peso:
0.211644 oz
Tags
MJE5851, MJE58, MJE5, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***enic
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8.0 A, 350 V PNP Bipolar Power Transistor
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BIPOLAR TRANSISTOR, PNP, -350V, TO-220;
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The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
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8.0 A, 300 V PNP Bipolar Power Transistor
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400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:
***ark
RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
***enic
300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
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Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
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Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5 | ON Semiconductor MJE5850G
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TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
Parte # Mfg. Descrizione Azione Prezzo
MJE5851G
DISTI # V99:2348_07278929		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		390
  • 5000:$1.2130
  • 2500:$1.2200
  • 1000:$1.2580
  • 500:$1.3110
  • 100:$1.5049
  • 10:$1.9280
  • 1:$2.0630
MJE5851G
DISTI # MJE5851GOS-ND		ON SemiconductorTRANS PNP 350V 8A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		350In Stock
  • 1000:$1.4992
  • 500:$1.8094
  • 100:$2.2023
  • 50:$2.5848
  • 1:$3.0500
MJE5851G
DISTI # 26621158		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4000
  • 400:$1.2496
MJE5851G
DISTI # 27149027		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		390
  • 100:$1.5200
  • 10:$1.9250
  • 5:$2.0200
MJE5851G
DISTI # MJE5851G		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5851G)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1072
  • 1:$1.7900
  • 10:$1.6900
  • 25:$1.6900
  • 50:$1.6900
  • 100:$1.2900
  • 500:$1.2900
  • 1000:$1.2900
MJE5851G
DISTI # 42K1299		ON SemiconductorBIPOLAR TRANSISTOR, PNP, -350V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:-8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$3.1600
  • 10:$2.5700
  • 25:$2.0800
  • 100:$2.0200
  • 250:$1.8400
  • 500:$1.5300
  • 1000:$1.4300
  • 2500:$1.3800
MJE5851G
DISTI # 863-MJE5851G		ON SemiconductorBipolar Transistors - BJT 8A 350V 80W PNP
RoHS: Compliant		402
  • 1:$2.9000
  • 10:$2.4700
  • 100:$1.9700
  • 500:$1.7300
  • 1000:$1.4300
MJE5852G
DISTI # 863-MJE5852G		ON SemiconductorBipolar Transistors - BJT 8A 400V 80W PNP
RoHS: Compliant		380
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
MJE5851
DISTI # 863-MJE5851		ON SemiconductorBipolar Transistors - BJT 8A 350V 80W PNP
RoHS: Not compliant		0
    MJE5851GON Semiconductor 
    RoHS: Not Compliant    		14
    • 1000:$1.4300
    • 500:$1.5100
    • 100:$1.5700
    • 25:$1.6400
    • 1:$1.7700
    MJE5851G
    DISTI # C1S541900354298    		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		390
    • 100:$1.5200
    • 10:$1.9250
    • 1:$2.0200
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    Disponibilità
    Azione:
    615
    Su ordine:
    2598
    Inserisci la quantità:
    Il prezzo attuale di MJE5851G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,90 USD
    2,90 USD
    10
    2,47 USD
    24,70 USD
    100
    1,97 USD
    197,00 USD
    500
    1,73 USD
    865,00 USD
    1000
    1,43 USD
    1 430,00 USD
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