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NSBC123EPDXV6T1G

NSBC123EPDXV6T1G
Mfr. #:
NSBC123EPDXV6T1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSBC123EPDXV6T1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBC123EPDXV6T1G DatasheetNSBC123EPDXV6T1G Datasheet (P4-P6)NSBC123EPDXV6T1G Datasheet (P7)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Configurazione:
Dual
Polarità del transistor:
NPN, PNP
Resistenza di ingresso tipica:
2.2 kOhms
Rapporto resistore tipico:
1
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-563-6
Guadagno base/collettore DC hfe min:
8
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
100 mA
Corrente di picco del collettore CC:
100 mA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
NSBC123EPDXV6
Confezione:
Bobina
Altezza:
0.55 mm
Lunghezza:
1.6 mm
Larghezza:
1.2 mm
Marca:
ON Semiconductor
Numero di canali:
2 Channel
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
4000
sottocategoria:
transistor
Unità di peso:
0.000106 oz
Tags
NSBC123E, NSBC123, NSBC12, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***emi
50V Dual Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***emi
50V Dual PNP Bipolar Digital Transistor
***ponent Stockers USA
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot-563; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
50V Dual NPN Bipolar Digital Transistor
***Yang
Trans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot563; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
Parte # Mfg. Descrizione Azione Prezzo
NSBC123EPDXV6T1G
DISTI # NSBC123EPDXV6T1GOS-ND		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    NSBC123EPDXV6T1G
    DISTI # NSBC123EPDXV6T1G    		ON SemiconductorTrans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC123EPDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel    		Americas - 0
    • 8000:$0.0779
    • 16000:$0.0769
    • 24000:$0.0759
    • 40000:$0.0749
    • 80000:$0.0739
    NSBC123EPDXV6T1G
    DISTI # 42K2335    		ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
    • 1:$0.1200
    NSBC123EPDXV6T1G
    DISTI # 49X8965    		ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
    • 1:$0.4030
    • 25:$0.3090
    • 50:$0.2580
    • 100:$0.2160
    • 250:$0.1820
    • 500:$0.1550
    • 1000:$0.1260
    • 2500:$0.1070
    NSBC123EPDXV6T1G
    DISTI # 863-NSBC123EPDXV6T1G    		ON SemiconductorBipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    RoHS: Compliant    		0
    • 1:$0.3500
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 4000:$0.0930
    • 8000:$0.0870
    • 24000:$0.0800
    • 48000:$0.0770
    • 100000:$0.0740
    NSBC123EPDXV6T1GON Semiconductor 
    RoHS: Not Compliant    		100000
    • 1000:$0.0900
    • 100:$0.1000
    • 500:$0.1000
    • 1:$0.1100
    • 25:$0.1100
    Immagine Parte # Descrizione
    NSBC123EDXV6T1G

    Mfr.#: NSBC123EDXV6T1G

    OMO.#: OMO-NSBC123EDXV6T1G

    		 Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
    NSBC123EPDXV6T1G

    Mfr.#: NSBC123EPDXV6T1G

    OMO.#: OMO-NSBC123EPDXV6T1G

    		 Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    NSBC123EF3T5G

    Mfr.#: NSBC123EF3T5G

    OMO.#: OMO-NSBC123EF3T5G

    		 Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
    NSBC123EPDXV6T1

    Mfr.#: NSBC123EPDXV6T1

    OMO.#: OMO-NSBC123EPDXV6T1

    		 Bipolar Transistors - Pre-Biased 100mA Complementary
    NSBC123EDXV6T1

    Mfr.#: NSBC123EDXV6T1

    OMO.#: OMO-NSBC123EDXV6T1-ON-SEMICONDUCTOR

    		 TRANS 2NPN PREBIAS 0.5W SOT563
    NSBC123EDXV6T1G

    Mfr.#: NSBC123EDXV6T1G

    OMO.#: OMO-NSBC123EDXV6T1G-ON-SEMICONDUCTOR

    		 TRANS 2NPN PREBIAS 0.5W SOT563
    NSBC123EPDXV6T1

    Mfr.#: NSBC123EPDXV6T1

    OMO.#: OMO-NSBC123EPDXV6T1-ON-SEMICONDUCTOR

    		 TRANS PREBIAS NPN/PNP SOT563
    NSBC123EF3T5G

    Mfr.#: NSBC123EF3T5G

    OMO.#: OMO-NSBC123EF3T5G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
    NSBC123EPDXV6T1G

    Mfr.#: NSBC123EPDXV6T1G

    OMO.#: OMO-NSBC123EPDXV6T1G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K
    Disponibilità
    Azione:
    Available
    Su ordine:
    1991
    Inserisci la quantità:
    Il prezzo attuale di NSBC123EPDXV6T1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,35 USD
    0,35 USD
    10
    0,27 USD
    2,66 USD
    100
    0,14 USD
    14,40 USD
    1000
    0,11 USD
    108,00 USD
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