BSC066N06NSATMA1

BSC066N06NSATMA1
Mfr. #:
BSC066N06NSATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET MV POWER MOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC066N06NSATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC066N06NSATMA1 DatasheetBSC066N06NSATMA1 Datasheet (P4-P6)BSC066N06NSATMA1 Datasheet (P7-P9)BSC066N06NSATMA1 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
BSC066N06NSATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PG-TDSON-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
64 A
Rds On - Resistenza Drain-Source:
6.6 mOhms
Vgs th - Tensione di soglia gate-source:
2.1 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
17 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
46 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
1.27 mm
Lunghezza:
5.9 mm
Serie:
OptiMOS 5
Tipo di transistor:
1 N-Channel
Larghezza:
5.15 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
32 S
Tempo di caduta:
3 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
3 ns
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
12 ns
Tempo di ritardo di accensione tipico:
7 ns
Parte # Alias:
BSC066N06NS SP001067000
Unità di peso:
0.003527 oz
Tags
BSC066, BSC06, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Norms all on 8 ohms

    2019-06-03
    A***o
    A***o
    UA

    Came 3 volt seules,In the photo innotecsQuality is normal, color is correct

    2019-05-02
***et
Trans MOSFET N-CH 60V 64A 8-Pin TDSON T/R
***nell
MOSFET, N-CH, 60V, 64A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 46W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
***ical
Trans MOSFET N-CH 60V 17A Automotive 5-Pin(4+Tab) SO-FL T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 60V 17A, 71A 3.6W 61W Surface Mount 5-DFN (5x6) MOSFET
***enic
60V 17A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel DFN-5 MOSFETs ROHS
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 61W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
NTMFS5 Series 60 V 17 A 6.1 mOhm Single N-Channel MOSFET - DFN-5
***Yang
Trans MOSFET N-CH 60V 71A 8-Pin SO-FL T/R - Tape and Reel
***enic
60V 71A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel SO-8FL MOSFETs ROHS
***ark
NFET SO8FL 40V 68A 6.7MOH / REEL ROHS COMPLIANT: YES
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
*** Source Electronics
Single N-Channel Field Effect Transistor
*** Stop Electro
Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***et
Trans MOSFET N-CH 60V 21.5A 8-Pin PowerPAK SO T/R
*** Americas
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
***i-Key
MOSFET N-CH 60V 60A PPAK SO-8
***ark
N-Channel 60-V (D-S) Mosfet
*** Europe
N-CH POWERPAK 60V SO-8 BWL
***et Europe
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
***or
MOSFET N-CH 60V 80A TO263-3
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Electronic
Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***el Nordic
Contact for details
***emi
Single N-Channel Power MOSFET 60V, 70A, 6.5mΩ Power MOSFET 60V, 70A, 6.5 mOhm, Single N-Channel, u8FL, Logic Level
***Yang
Trans MOSFET N-CH 60V 16A 8-Pin WDFN T/R - Tape and Reel
***roFlash
Power Field-Effect Transistor, 16A I(D), 60V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, AEC-Q101, 60V, 70A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 63W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
Mosfet Transistor, N Channel, 79 A, 60 V, 0.0071 Ohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,D2Pak,PD 110W,VGS+/-20V
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Parte # Mfg. Descrizione Azione Prezzo
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5144
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 64A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC066N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5059
  • 5002:$0.4879
  • 10002:$0.4699
  • 25000:$0.4539
  • 50000:$0.4459
BSC066N06NSATMA1
DISTI # 13AC8334
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power DissipationRoHS Compliant: Yes0
  • 1:$1.1600
  • 10:$0.9850
  • 25:$0.9090
  • 50:$0.8320
  • 100:$0.7560
  • 250:$0.7130
  • 500:$0.6690
  • 1000:$0.5280
BSC066N06NS
DISTI # 726-BSC066N06NS
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 726-BSC066N06NSATMA1
Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant
0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 2725811
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant
0
  • 5:£0.8370
  • 25:£0.7520
  • 100:£0.5780
  • 250:£0.5450
  • 500:£0.5110
BSC066N06NSATMA1
DISTI # 2725811
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant
0
  • 1:$2.2200
  • 10:$1.9700
  • 100:$1.5600
  • 500:$1.2100
  • 1000:$0.9530
Immagine Parte # Descrizione
ADS1115IRUGT

Mfr.#: ADS1115IRUGT

OMO.#: OMO-ADS1115IRUGT

Analog to Digital Converters - ADC 16B ADC w/ Int MUX PGA Comp Osc & Ref
TPS61196PWPR

Mfr.#: TPS61196PWPR

OMO.#: OMO-TPS61196PWPR

LED Lighting Drivers 6-String 400mA WLED Driver
PCA9517ADP,118

Mfr.#: PCA9517ADP,118

OMO.#: OMO-PCA9517ADP-118

Interface - Signal Buffers, Repeaters LEVEL TRANSL I2C BUS
BSC028N06NSATMA1

Mfr.#: BSC028N06NSATMA1

OMO.#: OMO-BSC028N06NSATMA1

MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
BSC097N06NSATMA1

Mfr.#: BSC097N06NSATMA1

OMO.#: OMO-BSC097N06NSATMA1

MOSFET N-Ch 60V 46A TDSON-8
B360A-13-F

Mfr.#: B360A-13-F

OMO.#: OMO-B360A-13-F

Schottky Diodes & Rectifiers 60V 3A
SS5P10-M3/86A

Mfr.#: SS5P10-M3/86A

OMO.#: OMO-SS5P10-M3-86A

Schottky Diodes & Rectifiers 5.0 Amp100 Volt
SS16

Mfr.#: SS16

OMO.#: OMO-SS16

Schottky Diodes & Rectifiers 1A Schottky Barrier Rectifier
TDP142IRNQT

Mfr.#: TDP142IRNQT

OMO.#: OMO-TDP142IRNQT

Display Interface IC DisplayPortG 8.1 Gbps Linear Redriver 40-WQFN -40 to 85
3266W-1-103LF

Mfr.#: 3266W-1-103LF

OMO.#: OMO-3266W-1-103LF

Trimmer Resistors - Through Hole 1/4" 10Kohms 10% SQ W/Standoff Sealed
Disponibilità
Azione:
Available
Su ordine:
1987
Inserisci la quantità:
Il prezzo attuale di BSC066N06NSATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,15 USD
1,15 USD
10
0,98 USD
9,85 USD
100
0,76 USD
75,60 USD
500
0,67 USD
334,50 USD
1000
0,53 USD
528,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
Top