FGW15N40A

FGW15N40A
Mfr. #:
FGW15N40A
Produttore:
Fuji Electric Co Ltd
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGW15N40A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
FGW1, FGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
MOSFETs N-CH/400V/ 30A/TRENCH
Parte # Mfg. Descrizione Azione Prezzo
FGW15N120HD
DISTI # 70241437
Fuji Electric Co LtdIC,IGBT,High-Speed V-Series,1200V,15A,1550W,TP-247-P2
RoHS: Not Compliant
0
  • 100:$4.8900
FGW15N120HD
DISTI # 7729020
Fuji Electric Co LtdFuji Electric FGW15N120HD IGBT, 15 A 1200 V, 3-Pin TO-247, EA
Min Qty: 1
Container: Bulk
0
  • 1:$7.3830
  • 5:$7.0060
  • 15:$6.6420
  • 30:$6.2780
  • 60:$5.9010
FGW15N120HD
DISTI # 1684684
Fuji Electric Co LtdIn a Tube of 30, Fuji Electric FGW15N120HD IGBT, 15 A 1200 V, 3-Pin TO-247, TU
Min Qty: 30
Container: Tube
0
  • 30:$6.7040
FGW15N120H
DISTI # FE0000000000862
Fuji Electric Co LtdPower Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
0 in Stock0 on Order
    FGW15N120H-S31PP-P2
    DISTI # FE0000000001754
    Fuji Electric Co LtdDISCRETE IGBT- High Speed V
    RoHS: Compliant
    0 in Stock0 on Order
    • 600:$1.6300
    • 1:$1.7500
    FGW15N120HD-S31PP-P2
    DISTI # FE0000000000863
    Fuji Electric Co LtdDISCRETE IGBT- High Speed V
    RoHS: Compliant
    0 in Stock0 on Order
    • 600:$1.9600
    • 1:$2.1100
    FGW15N120HD
    DISTI # 2414404
    Fuji Electric Co LtdIGBT, SINGLE, 1.2KV, 31A, TO-247-3
    RoHS: Compliant
    0
    • 500:£3.5500
    • 250:£3.6300
    • 100:£3.7000
    • 25:£3.7800
    • 1:£4.1900
    Immagine Parte # Descrizione
    FGW15N120H

    Mfr.#: FGW15N120H

    OMO.#: OMO-FGW15N120H-1190

    Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
    FGW15N120HD

    Mfr.#: FGW15N120HD

    OMO.#: OMO-FGW15N120HD-1190

    IGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3
    FGW15N120VD

    Mfr.#: FGW15N120VD

    OMO.#: OMO-FGW15N120VD-1190

    IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:
    FGW15N40

    Mfr.#: FGW15N40

    OMO.#: OMO-FGW15N40-1190

    Nuovo e originale
    FGW15N40A

    Mfr.#: FGW15N40A

    OMO.#: OMO-FGW15N40A-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di FGW15N40A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,00 USD
    0,00 USD
    10
    0,00 USD
    0,00 USD
    100
    0,00 USD
    0,00 USD
    500
    0,00 USD
    0,00 USD
    1000
    0,00 USD
    0,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
    Iniziare con
    Top