SPD09P06PLGBTMA1

Mfr. #:: SPD09P06PLGBTMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET P-Ch -60V 9.7A DPAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SPD09P06PLGBTMA1 Scheda dati
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 9.7 A

Rds On - Resistenza Drain-Source:: 200 mOhms

Vgs th - Tensione di soglia gate-source:: 2 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 21 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 42 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Altezza:: 2.3 mm

Lunghezza:: 6.5 mm

Serie:: XPD09P06

Tipo di transistor:: 1 P-Channel

Larghezza:: 6.22 mm

Marca:: Tecnologie Infineon

Transconduttanza diretta - Min:: 1.8 S

Tempo di caduta:: 89 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 168 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 49 ns

Tempo di ritardo di accensione tipico:: 11 ns

Parte # Alias:: G SP000443928 SPD09P06PL SPD9P6PLGXT

Unità di peso:: 0.139332 oz

Tags: SPD09P06PLG, SPD09P0, SPD09P, SPD09, SPD0, SPD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD09P06PLGBTMA1 Descrizione

***ure Electronics: Single P-Channel 60 V 250 mOhm 14 nC SIPMOS® Power Mosfet - DPAK

***ment14 APAC: MOSFET, P-CH, -60V, -9.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.7A; Source Voltage Vds:-60V; On Resistance

***nell: MOSFET, P-CH, -60V, -9.7A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***icroelectronics: N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET

***ure Electronics: N-Channel 60 V 0.1 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***ark: MOSFET, N CH, 60V, 12A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***emi: P-Channel PowerTrench® MOSFET, 60V, -15A, 100mΩ

***ure Electronics: P-Channel 60 V 100 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.

***ark: MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 130 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.6

*** Electronics: N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

***ure Electronics: N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3

***ark: MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: P-Channel owerTrench® MOSFET, -40V, -14A, 44mΩ

*** Source Electronics: Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK

***ure Electronics: P-Channel 40 V 44 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***sible Micro: XTR,PWR,MFT,FDD4243,DPK -40V,-14A,40mOHM,P-CHNL POWER MOSFET,D-PAK PKG

***roFlash: Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42

***emi: P-Channel PowerTrench® MOSFET, 30V, -40A, 20mΩ

***ure Electronics: P-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, P, SMD, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-40A; Package / Case:DPAK; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -40 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 25 / Fall Time ns = 21 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 52

***icroelectronics: N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package

***ure Electronics: N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 200V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SPD09P06PLGBTMA1 DISTI # V72:2272_06390894	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	62	75000:$0.2801 30000:$0.2814 15000:$0.2829 6000:$0.2974 3000:$0.3032 1000:$0.3492 500:$0.3653 250:$0.4024 100:$0.4471 50:$0.5582 25:$0.6203 10:$0.7581 1:$0.9090
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 9.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	28439In Stock	1000:$0.3893 500:$0.4867 100:$0.6156 10:$0.8030 1:$0.9100
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 9.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	28439In Stock	1000:$0.3893 500:$0.4867 100:$0.6156 10:$0.8030 1:$0.9100
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 9.7A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	25000In Stock	25000:$0.2993 12500:$0.3071 5000:$0.3189 2500:$0.3426
SPD09P06PLGBTMA1 DISTI # 33960881	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1741	126:$0.6154
SPD09P06PLGBTMA1 DISTI # 32728777	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	62	28:$0.9090
SPD09P06PLGBTMA1 DISTI # SP000443928	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A 3-Pin TO-252 T/R (Alt: SP000443928) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2279 15000:€0.2449 10000:€0.2659 5000:€0.2899 2500:€0.3539
SPD09P06PLGBTMA1 DISTI # 50Y7848	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 50Y7848) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0
SPD09P06PLGXT DISTI # SPD09P06PLGBTMA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 9.7A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: SPD09P06PLGBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2279 15000:$0.2319 10000:$0.2399 5000:$0.2499 2500:$0.2589
SPD09P06PLGBTMA1 DISTI # 50Y7848	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, 175DEG C, 42W,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V RoHS Compliant: Yes	1741	1000:$0.3640 500:$0.3940 250:$0.4240 100:$0.4550 50:$0.5380 25:$0.6210 10:$0.7050 1:$0.8480
SPD09P06PL G DISTI # 726-SPD09P06PLG	Infineon Technologies AG	MOSFET P-Ch -60V 9.7A DPAK-2 RoHS: Compliant	4044	1:$0.8400 10:$0.6980 100:$0.4500 1000:$0.3600 2500:$0.3040 10000:$0.2930 25000:$0.2820
SPD09P06PLGBTMA1 DISTI # 726-SPD09P06PLGBTMA1	Infineon Technologies AG	MOSFET P-Ch -60V 9.7A DPAK-2 RoHS: Compliant	2564	1:$0.8400 10:$0.6980 100:$0.4500 1000:$0.3600 2500:$0.3040 10000:$0.2930 25000:$0.2820
SPD09P06PLGBTMA1	Infineon Technologies AG		952
SPD09P06PLGBTMA1 DISTI # 8269074P	Infineon Technologies AG	MOSFET P-CH 9.7A 60V SIPMOS TO252, RL	2500	2500:£0.2810 1000:£0.2970 250:£0.3700
SPD09P06PLGBTMA1 DISTI # SPD09P06PLGBTMA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-60V,-9.7A,42W,PG-TO252-3	1218	100:$0.3300 10:$0.3700 3:$0.4700 1:$0.6100
SPD09P06PLGBTMA1 DISTI # 2480880	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, TO-252-3	2540	500:£0.2750 250:£0.3120 100:£0.3500 10:£0.5970 1:£0.7480
SPD09P06PLGBTMA1 DISTI # 2480880RL	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, TO-252-3 RoHS: Compliant	0	1000:$0.5430 100:$0.6780 10:$1.0500 1:$1.2700
SPD09P06PLGBTMA1 DISTI # 2480880	Infineon Technologies AG	MOSFET, P-CH, -60V, -9.7A, TO-252-3 RoHS: Compliant	2505	1000:$0.5430 100:$0.6780 10:$1.0500 1:$1.2700

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Disponibilità

Azione:: Available
Su ordine:: 1985
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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,84 USD~~; ~~0,84 USD~~

10: ~~0,70 USD~~; ~~6,98 USD~~

100: ~~0,45 USD~~; ~~45,00 USD~~

1000: ~~0,36 USD~~; ~~360,00 USD~~

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SPD09P06PLGBTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes