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IXTP160N10T

IXTP160N10T
Mfr. #:
IXTP160N10T
Produttore:
IXYS
Descrizione:
MOSFET 160 Amps 100V 6.9 Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTP160N10T Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP160N10T DatasheetIXTP160N10T Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXTP160N10
Confezione
Tubo
Unità di peso
0.081130 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
430 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
42 ns
Ora di alzarsi
61 ns
Id-Continuo-Scarico-Corrente
160 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
7 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
49 ns
Tempo di ritardo all'accensione tipico
33 ns
Modalità canale
Aumento
Tags
IXTP160, IXTP16, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***ponent Stockers USA
120 A 100 V 0.0051 ohm N-CHANNEL Si POWER MOSFET TO-220AB
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Power Field-Effect Transistor, 120A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-CHANNEL 75V - 0.0065 OHM -120A TO-220 STripFET II MOSFET
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N-Channel 75 V 7.5 mO Flange Mount STripFET™III Power MosFet - TO-220
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Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 75V 120A UltraFET III TO220
***nell
MOSFET, N CH, 75V, 120A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
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FDP047N10 Series 100 V 164 A 4.7 mOhm N-Channel PowerTrench Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET,N CH,100V,120A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***ure Electronics
N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube
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N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ
*** Electronics
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*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
100V 4.5MOHM TO220 3L JEDEC GREEN EMC - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (F102)
***emi
N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ
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Trans MOSFET N-CH Si 100V 164A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descrizione Azione Prezzo
IXTP160N10T
DISTI # 31006701		IXYS CorporationTrans MOSFET N-CH 100V 160A 3-Pin(3+Tab) TO-220
RoHS: Compliant		50
  • 1000:$1.8856
  • 500:$2.2358
  • 100:$2.7612
  • 10:$3.3677
IXTP160N10T
DISTI # IXTP160N10T-ND		IXYS CorporationMOSFET N-CH 100V 160A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.8788
  • 500:$2.2277
  • 100:$2.7511
  • 50:$3.0196
  • 1:$3.7600
IXTP160N10T
DISTI # C1S331700027304		IXYS CorporationTrans MOSFET N-CH 100V 160A Automotive 3-Pin(3+Tab) TO-220
RoHS: Compliant		50
  • 50:$3.0200
  • 10:$3.6800
  • 1:$5.6700
IXTP160N10T
DISTI # 747-IXTP160N10T		IXYS CorporationMOSFET 160 Amps 100V 6.9 Rds
RoHS: Compliant		0
    Immagine Parte # Descrizione
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    OMO.#: OMO-IXTP160N075T-IXYS-CORPORATION

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    IXTP1R4N100P

    Mfr.#: IXTP1R4N100P

    OMO.#: OMO-IXTP1R4N100P-IXYS-CORPORATION

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    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di IXTP160N10T è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,95 USD
    2,95 USD
    10
    2,80 USD
    27,99 USD
    100
    2,65 USD
    265,17 USD
    500
    2,50 USD
    1 252,20 USD
    1000
    2,36 USD
    2 357,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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