IS61WV51216EEBLL-10B2LI-TR

IS61WV51216EEBLL-10B2LI-TR
Mfr. #:
IS61WV51216EEBLL-10B2LI-TR
Produttore:
ISSI
Descrizione:
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IS61WV51216EEBLL-10B2LI-TR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IS61WV51216EEBLL-10B2LI-TR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ISSI
Categoria di prodotto:
SRAM
Dimensione della memoria:
8 Mbit
Organizzazione:
512 k x 16
Orario di accesso:
10 ns
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.4 V
Corrente di alimentazione - Max:
95 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TFBGA-48
Confezione:
Bobina
Tipo di memoria:
SDR
Serie:
IS61WV51216EEBLL
Tipo:
asincrono
Marca:
ISSI
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
2500
sottocategoria:
Memoria e archiviazione dati
Tags
IS61WV51216EEBLL-10B, IS61WV51216EEB, IS61WV51216EE, IS61WV51216E, IS61WV5121, IS61WV5, IS61W, IS61, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Asynchronous SRAMs
ISSI Asynchronous SRAMs are offered in x8, x16, and x32 configurations. These devices are available in high-speed, low-power, high-speed/low-power, PowerSaver lower power and automotive versions with long-term support offered by ISSI's commitment to continued development of these products. With a wide offering of densities (64K to 16M), speeds (8ns to 55ns), supply voltages (1.65V to 5V), temperature ranges (commercial, industrial and automotive), and packages (BGA, SOJ, SOP, sTSOP, and TSOP) ISSI offers just about any asynchronous SRAM that an engineer could need for their latest design.Learn More
Immagine Parte # Descrizione
IS61WV51216EEBLL-10BLI

Mfr.#: IS61WV51216EEBLL-10BLI

OMO.#: OMO-IS61WV51216EEBLL-10BLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EEBLL-10T2LI

Mfr.#: IS61WV51216EEBLL-10T2LI

OMO.#: OMO-IS61WV51216EEBLL-10T2LI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
IS61WV51216EEBLL-10B2LI

Mfr.#: IS61WV51216EEBLL-10B2LI

OMO.#: OMO-IS61WV51216EEBLL-10B2LI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
IS61WV51216EEALL-20BLI

Mfr.#: IS61WV51216EEALL-20BLI

OMO.#: OMO-IS61WV51216EEALL-20BLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EEBLL-10TLI

Mfr.#: IS61WV51216EEBLL-10TLI

OMO.#: OMO-IS61WV51216EEBLL-10TLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
IS61WV51216EEBLL-10BLI-TR

Mfr.#: IS61WV51216EEBLL-10BLI-TR

OMO.#: OMO-IS61WV51216EEBLL-10BLI-TR

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EEALL-20TLI

Mfr.#: IS61WV51216EEALL-20TLI

OMO.#: OMO-IS61WV51216EEALL-20TLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEALL-20TLI-TR

Mfr.#: IS61WV51216EEALL-20TLI-TR

OMO.#: OMO-IS61WV51216EEALL-20TLI-TR

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEBLL-10T2LI-TR

Mfr.#: IS61WV51216EEBLL-10T2LI-TR

OMO.#: OMO-IS61WV51216EEBLL-10T2LI-TR

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
IS61WV51216EEBLL-10BLI

Mfr.#: IS61WV51216EEBLL-10BLI

OMO.#: OMO-IS61WV51216EEBLL-10BLI-INTEGRATED-SILICON-SOLUTION

IC SRAM 8M PARALLEL 48TFBGA
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di IS61WV51216EEBLL-10B2LI-TR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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