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SI2308BDS-T1-E3

SI2308BDS-T1-E3
Mfr. #:
SI2308BDS-T1-E3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 60V Vds 20V Vgs SOT-23
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI2308BDS-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2308BDS-T1-E3 DatasheetSI2308BDS-T1-E3 Datasheet (P4-P6)SI2308BDS-T1-E3 Datasheet (P7-P9)SI2308BDS-T1-E3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
SI2308BDS-T1-E3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
2.3 A
Rds On - Resistenza Drain-Source:
156 mOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
6.8 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1.66 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SI2
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
5 S
Tempo di caduta:
7 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
10 ns
Tempo di ritardo di accensione tipico:
4 ns
Parte # Alias:
SI2308BDS-E3
Unità di peso:
0.000282 oz
Tags
SI2308BDS-T, SI2308B, SI2308, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 156 mOhm Surface Mount Power Mosfet - SOT-23-3
*** Source Electronics
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 2.3A SOT23-3
***ied Electronics & Automation
SI2308BDS-T1-E3 N-channel MOSFET Module; 2.3 A; 60 V; 3-Pin TO-236
***nell
MOSFET, N CH, 60V, 0.13OHM, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.66W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descrizione Azione Prezzo
SI2308BDS-T1-E3
DISTI # V72:2272_07435022		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
RoHS: Compliant		254
  • 250:$0.3610
  • 100:$0.3645
  • 25:$0.4418
  • 10:$0.5399
  • 1:$0.6638
SI2308BDS-T1-E3
DISTI # V36:1790_07435022		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.1963
  • 1500000:$0.1965
  • 300000:$0.2012
  • 30000:$0.2074
  • 3000:$0.2084
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 60V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		74868In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		74868In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 60V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		72000In Stock
  • 30000:$0.1434
  • 15000:$0.1512
  • 6000:$0.1625
  • 3000:$0.1736
SI2308BDS-T1-E3
DISTI # 32708464		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
RoHS: Compliant		254
  • 38:$0.6638
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 48000
  • 30000:$0.1538
  • 18000:$0.1581
  • 12000:$0.1626
  • 6000:$0.1695
  • 3000:$0.1747
SI2308BDS-T1-E3
DISTI # 69W7187		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 69W7187)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.2050
  • 500:$0.2650
  • 250:$0.2940
  • 100:$0.3220
  • 50:$0.3780
  • 25:$0.4340
  • 1:$0.5700
SI2308BDS-T1-E3
DISTI # 69W7187		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes1504
  • 1000:$0.2590
  • 500:$0.3350
  • 250:$0.3700
  • 100:$0.4060
  • 50:$0.4780
  • 25:$0.5480
  • 1:$0.7080
SI2308BDS-T1-E3.
DISTI # 26AC3317		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO48000
  • 50000:$0.1550
  • 30000:$0.1620
  • 20000:$0.1740
  • 10000:$0.1860
  • 5000:$0.2020
  • 1:$0.2070
SI2308BDS-T1-E3
DISTI # 70026194		Vishay SiliconixSI2308BDS-T1-E3 N-channel MOSFET Module,2.3 A,60 V,3-Pin TO-236
RoHS: Compliant		0
  • 3000:$0.2240
  • 6000:$0.2130
  • 9000:$0.1800
SI2308BDS-T1-E3/BKN
DISTI # 70026354		Vishay Siliconix60V,N-Channel 220 MOHM 4.5 V Rated MOSFET
RoHS: Compliant		0
  • 1:$0.3100
  • 100:$0.2800
  • 250:$0.2200
SI2308BDS-T1-E3
DISTI # 781-SI2308BDS-E3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SOT-23
RoHS: Compliant		10392
  • 1:$0.5600
  • 10:$0.4330
  • 100:$0.3210
  • 500:$0.2640
  • 1000:$0.2040
  • 3000:$0.1850
SI2308BDS-T1-E3
DISTI # 1807271		Vishay IntertechnologiesN-CH MOSFET SOT-23 60V 130MOHM @ 10V - L, RL2540
  • 6000:£0.1530
  • 3000:£0.1620
SI2308BDS-T1-E3
DISTI # 2459410		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3
RoHS: Compliant		1504
  • 1000:$0.2960
  • 500:$0.3830
  • 100:$0.4870
  • 10:$0.6530
  • 1:$0.7700
SI2308BDS-T1-E3
DISTI # 2335286		Vishay IntertechnologiesMOSFET, N CH, 60V, 0.13OHM, 2.3A, SOT-23
RoHS: Compliant		0
  • 1000:$0.2960
  • 500:$0.3830
  • 100:$0.4870
  • 10:$0.6530
  • 1:$0.7700
SI2308BDS-T1-E3
DISTI # 2459410		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 2.3A, SOT-23-31354
  • 250:£0.3350
  • 100:£0.3680
  • 50:£0.4320
  • 25:£0.4960
  • 1:£0.6410
SI2308BDS-T1-E3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SOT-23
RoHS: Compliant		Americas - 3000
    Immagine Parte # Descrizione
    SMAJ30A-TR

    Mfr.#: SMAJ30A-TR

    OMO.#: OMO-SMAJ30A-TR

    		 TVS Diodes / ESD Suppressors 400W 30V Unidirect
    SI1062X-T1-GE3

    Mfr.#: SI1062X-T1-GE3

    OMO.#: OMO-SI1062X-T1-GE3

    		 MOSFET 20V Vds 8V Vgs SC89-3
    NTR2101PT1G

    Mfr.#: NTR2101PT1G

    OMO.#: OMO-NTR2101PT1G

    		 MOSFET -8V 3.7A P-Channel
    BAT 60B E6327

    Mfr.#: BAT 60B E6327

    OMO.#: OMO-BAT-60B-E6327

    		 Schottky Diodes & Rectifiers Silicon Schottky Diode
    GRM1555C1H180JA01D

    Mfr.#: GRM1555C1H180JA01D

    OMO.#: OMO-GRM1555C1H180JA01D

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT RECOMMENDED ALT 81-GRM0335C1H180JA1D
    MCT06030C1000FP500

    Mfr.#: MCT06030C1000FP500

    OMO.#: OMO-MCT06030C1000FP500

    		 Thin Film Resistors - SMD .1W 100ohm 1% 0603 50ppm Auto
    GRM1555C1H180JA01D

    Mfr.#: GRM1555C1H180JA01D

    OMO.#: OMO-GRM1555C1H180JA01D-MURATA-ELECTRONICS

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 18pF 50volts C0G 5%
    SMAJ30A-TR

    Mfr.#: SMAJ30A-TR

    OMO.#: OMO-SMAJ30A-TR-STMICROELECTRONICS

    		 TVS DIODE 30V 64.3V SMA
    SI1062X-T1-GE3

    Mfr.#: SI1062X-T1-GE3

    OMO.#: OMO-SI1062X-T1-GE3-VISHAY

    		 MOSFET N-CH 20V SC-89
    NTR2101PT1G

    Mfr.#: NTR2101PT1G

    OMO.#: OMO-NTR2101PT1G-ON-SEMICONDUCTOR

    		 Nuovo e originale
    Disponibilità
    Azione:
    15
    Su ordine:
    1998
    Inserisci la quantità:
    Il prezzo attuale di SI2308BDS-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,56 USD
    0,56 USD
    10
    0,43 USD
    4,33 USD
    100
    0,32 USD
    32,10 USD
    500
    0,26 USD
    132,00 USD
    1000
    0,20 USD
    204,00 USD
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