IPB200N15N3

IPB200N15N3
Mfr. #:
IPB200N15N3
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB200N15N3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS 3
Confezione
Bobina
Alias ​​parziali
IPB200N15N3GATMA1 IPB200N15N3GXT SP000414740
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
150 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6 ns
Ora di alzarsi
11 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
50 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
4 V
Rds-On-Drain-Source-Resistenza
20 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
23 ns
Tempo di ritardo all'accensione tipico
14 ns
Qg-Gate-Carica
31 nC
Transconduttanza diretta-Min
57 S 29 S
Modalità canale
Aumento
Tags
IPB200N15N3, IPB200N1, IPB200, IPB20, IPB2, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
N-CHANNEL POWER MOSFET
Parte # Mfg. Descrizione Azione Prezzo
IPB200N15N3GATMA1
DISTI # 31077231
Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
4000
  • 2000:$1.2425
  • 1000:$1.3875
IPB200N15N3 G
DISTI # 30579106
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
RoHS: Compliant
1000
  • 500:$1.6575
  • 100:$1.8870
  • 50:$2.0145
  • 10:$2.3843
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1999In Stock
  • 500:$1.8473
  • 100:$2.3751
  • 10:$2.9560
  • 1:$3.2700
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1999In Stock
  • 500:$1.8473
  • 100:$2.3751
  • 10:$2.9560
  • 1:$3.2700
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 150V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$1.4861
IPB200N15N3 G
DISTI # C1S322000088900
Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 100:$1.4800
  • 50:$1.5800
  • 10:$1.8700
  • 1:$2.2000
IPB200N15N3GATMA1
DISTI # C1S322000281482
Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
4000
  • 1000:$1.3800
IPB200N15N3 G
DISTI # SP000414740
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.8900
  • 2000:€1.4900
  • 4000:€1.1900
  • 6000:€1.0900
  • 10000:€1.0900
IPB200N15N3GATMA1
DISTI # IPB200N15N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.0900
IPB200N15N3GATMA1
DISTI # SP000414740
Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.5199
  • 2000:€1.2669
  • 4000:€1.1689
  • 6000:€1.0859
  • 10000:€1.0129
IPB200N15N3GATMA1
DISTI # 60R2679
Infineon Technologies AGMOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes0
  • 1:$2.8600
  • 10:$2.5700
  • 100:$2.0600
  • 500:$1.6900
IPB200N15N3 G
DISTI # 726-IPB200N15N3G
Infineon Technologies AGMOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
0
  • 1:$2.7500
  • 10:$2.3300
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
IPB200N15N3Infineon Technologies AG 
RoHS: Not Compliant
101
  • 1000:$0.6600
  • 500:$0.6900
  • 100:$0.7200
  • 25:$0.7500
  • 1:$0.8100
IPB200N15N3GInfineon Technologies AGPower Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
127
  • 1000:$1.1200
  • 500:$1.1800
  • 100:$1.2300
  • 25:$1.2800
  • 1:$1.3800
IPB200N15N3GATMA1
DISTI # 7545443
Infineon Technologies AGMOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK286
  • 2:£2.0250
  • 10:£1.6050
  • 50:£1.4450
  • 250:£1.2850
  • 500:£1.1250
IPB200N15N3GATMA1
DISTI # 1775559
Infineon Technologies AGMOSFET, N CH, 50A, 150V, PG-TO263-3
RoHS: Compliant
954
  • 1:£2.0500
  • 10:£1.4600
  • 100:£1.3800
  • 250:£1.3000
  • 500:£1.1400
IPB200N15N3G
DISTI # XSKDRABV0030580
INF 
RoHS: Compliant
720
  • 1000:$1.9000
Immagine Parte # Descrizione
IPB200N15N3 G

Mfr.#: IPB200N15N3 G

OMO.#: OMO-IPB200N15N3-G

MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
IPB200N25N3 G

Mfr.#: IPB200N25N3 G

OMO.#: OMO-IPB200N25N3-G

MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
IPB200N25N3G

Mfr.#: IPB200N25N3G

OMO.#: OMO-IPB200N25N3G-1190

POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
IPB200N15N3 G

Mfr.#: IPB200N15N3 G

OMO.#: OMO-IPB200N15N3-G-1190

Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263
IPB200N15N3GATMA1

Mfr.#: IPB200N15N3GATMA1

OMO.#: OMO-IPB200N15N3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 150V 50A TO263-3
IPB200N15N3GS

Mfr.#: IPB200N15N3GS

OMO.#: OMO-IPB200N15N3GS-1190

Nuovo e originale
IPB200N25N3

Mfr.#: IPB200N25N3

OMO.#: OMO-IPB200N25N3-1190

Nuovo e originale
IPB200N25N3GATMA1

Mfr.#: IPB200N25N3GATMA1

OMO.#: OMO-IPB200N25N3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 250V 64A TO263-3
IPB200N25N3GXT

Mfr.#: IPB200N25N3GXT

OMO.#: OMO-IPB200N25N3GXT-1190

Nuovo e originale
IPB20N03L

Mfr.#: IPB20N03L

OMO.#: OMO-IPB20N03L-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di IPB200N15N3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,95 USD
0,95 USD
10
0,90 USD
9,05 USD
100
0,86 USD
85,71 USD
500
0,81 USD
404,75 USD
1000
0,76 USD
761,90 USD
Iniziare con
Prodotti più recenti
Top