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IRF630NSTRLPBF

IRF630NSTRLPBF
Mfr. #:
IRF630NSTRLPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF630NSTRLPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF630NSTRLPBF DatasheetIRF630NSTRLPBF Datasheet (P4-P6)IRF630NSTRLPBF Datasheet (P7-P9)IRF630NSTRLPBF Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:
IRF630NSTRLPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
9.3 A
Rds On - Resistenza Drain-Source:
300 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
23.3 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
82 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
2.3 mm
Lunghezza:
6.5 mm
Tipo di transistor:
1 N-Channel
Larghezza:
6.22 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
4.9 S
Tempo di caduta:
15 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
27 ns
Tempo di ritardo di accensione tipico:
7.9 ns
Parte # Alias:
SP001564548
Unità di peso:
0.139332 oz
Tags
IRF630NST, IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
***eco
IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2
***roFlash
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
***nell
MOSFET, N-CH, 200V, 9.3A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 82W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRF630NSTRLPBF
DISTI # V72:2272_13890568		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		968
  • 500:$0.5869
  • 250:$0.6470
  • 100:$0.6489
  • 25:$0.7894
  • 10:$0.7926
  • 1:$0.8895
IRF630NSTRLPBF
DISTI # IRF630NSTRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1915In Stock
  • 100:$1.0587
  • 10:$1.3210
  • 1:$1.4800
IRF630NSTRLPBF
DISTI # IRF630NSTRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		1600In Stock
  • 800:$0.7183
IRF630NSTRLPBF
DISTI # 26196294		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		968
  • 500:$0.5869
  • 250:$0.6470
  • 100:$0.6489
  • 25:$0.7894
  • 18:$0.7926
IRF630NSTRLPBF
DISTI # IRF630NSTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF630NSTRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Reel		Americas - 2400
  • 1600:$0.4099
  • 3200:$0.3949
  • 4800:$0.3809
  • 8000:$0.3679
  • 16000:$0.3619
IRF630NSTRLPBF
DISTI # SP001564548		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564548)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 36600
  • 800:€0.4569
  • 1600:€0.4309
  • 3200:€0.4059
  • 4800:€0.4049
  • 8000:€0.3969
IRF630NSTRLPBF
DISTI # IRF630NSTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF630NSTRLPBF)
RoHS: Compliant
Min Qty: 1600
Container: Tape and Reel		Asia - 0
    IRF630NSTRLPBF
    DISTI # 13AC9181    		Infineon Technologies AGMOSFET, N-CH, 200V, 9.3A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes1653
    • 1:$1.2800
    • 10:$1.1000
    • 25:$1.0200
    • 50:$0.9450
    • 100:$0.8660
    • 250:$0.8200
    • 500:$0.7730
    IRF630NSTRLPBF
    DISTI # 70019553    		Infineon Technologies AGIRF630NSTRLPBF N-channel MOSFET Transistor,9.3 A,200 V,3+Tab-Pin D2PAK
    RoHS: Compliant    		0
    • 1600:$1.9900
    IRF630NSTRLPBFInternational Rectifier 
    RoHS: Not Compliant    		600
    • 1000:$0.4700
    • 500:$0.5000
    • 100:$0.5200
    • 25:$0.5400
    • 1:$0.5800
    IRF630NSTRLPBF
    DISTI # 942-IRF630NSTRLPBF    		Infineon Technologies AGMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
    RoHS: Compliant    		1017
    • 1:$1.1700
    • 10:$0.9980
    • 100:$0.7670
    • 500:$0.6770
    • 800:$0.5350
    • 2400:$0.4740
    • 9600:$0.4570
    IRF630NSTRLPBF
    DISTI # 9154945P    		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 200V 9.5A D2PAK, RL336
    • 80:£0.6380
    • 400:£0.5550
    • 800:£0.3870
    • 2000:£0.3790
    IRF630NSTRLPBF
    DISTI # IRF630NSPBF-GURT    		Infineon Technologies AGN-Ch 200V 9,3A 82W 0,3R DPak
    RoHS: Compliant    		360
    • 10:€0.6660
    • 50:€0.3960
    • 200:€0.3060
    • 500:€0.2950
    IRF630NSTRLPBF
    DISTI # 2725890    		Infineon Technologies AGMOSFET, N-CH, 200V, 9.3A, TO-263
    RoHS: Compliant    		2398
    • 5:£0.7880
    • 25:£0.6510
    • 100:£0.5920
    • 250:£0.5660
    • 500:£0.3950
    IRF630NSTRLPBF
    DISTI # 2725890    		Infineon Technologies AGMOSFET, N-CH, 200V, 9.3A, TO-263
    RoHS: Compliant    		1648
    • 1:$1.8500
    • 10:$1.5800
    • 100:$1.2200
    • 500:$1.0800
    • 800:$0.8470
    • 2400:$0.7500
    • 9600:$0.7240
    IRF630NSTRLPBF
    DISTI # XSLY00000006692    		INFINEON/IRD2-PAK (TO-263)
    RoHS: Compliant    		1152
    • 1600:$0.5429
    IRF630NSTRLPBF
    DISTI # C1S322000481444    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		968
    • 250:$0.6470
    • 100:$0.6489
    • 25:$0.7894
    • 10:$0.7926
    IRF630NSTRLPBF
    DISTI # C1S322000481435    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		6400
    • 2400:$0.4230
    • 1600:$0.5110
    • 800:$0.5520
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di IRF630NSTRLPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,16 USD
    1,16 USD
    10
    1,00 USD
    9,98 USD
    100
    0,77 USD
    76,70 USD
    500
    0,68 USD
    338,50 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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