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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC050N03MSGATMA1 DISTI # V72:2272_06390904 | Infineon Technologies AG | Trans MOSFET N-CH 30V 16A 8-Pin TDSON EP T/R RoHS: Compliant | 4850 |
|
| BSC050N03MSGATMA1 DISTI # BSC050N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 80A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5059In Stock |
|
| BSC050N03MSGATMA1 DISTI # BSC050N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 80A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5059In Stock |
|
| BSC050N03MSGATMA1 DISTI # BSC050N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 80A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC050N03MSGATMA1 DISTI # 31016320 | Infineon Technologies AG | Trans MOSFET N-CH 30V 16A 8-Pin TDSON EP T/R RoHS: Compliant | 4850 |
|
| BSC050N03MSGATMA1 DISTI # BSC050N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 16A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC050N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC050N03MSGATMA1 DISTI # 60R2494 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 80A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 | |
| BSC050N03MSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 35000 |
|
| BSC050N03MS G DISTI # 726-BSC050N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M RoHS: Compliant | 2830 |
|
| BSC050N03MSG | Infineon Technologies AG | 8573 | ||
| BSC050N03MSG | Infineon Technologies AG | 30V,80A,N-channel power MOSFET | 3450 |
|
| BSC050N03MSGATMA1 DISTI # 1775446 | Infineon Technologies AG | MOSFET, N CH, 80A, 30V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC050N03MSGATMA1 DISTI # C1S322000718056 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 4850 |
|
| BSC050N03MSGATMA1 DISTI # 1775446 | Infineon Technologies AG | MOSFET, N CH, 80A, 30V, PG-TDSON-8 RoHS: Compliant | 10 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSC0502NSIATMA1 OMO.#: OMO-BSC0502NSIATMA1 |
MOSFET LV POWER MOS |
|
|
Mfr.#: BSC050N03LSGATMA1 OMO.#: OMO-BSC050N03LSGATMA1 |
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC050N04LSGATMA1 OMO.#: OMO-BSC050N04LSGATMA1 |
MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC050N03MSGATMA1 |
MOSFET N-CH 30V 80A TDSON-8 |
|
|
Mfr.#: BSC050N04LSGATMA1 |
MOSFET N-CH 40V 85A TDSON-8 |
|
Mfr.#: BSC050N08NS5 OMO.#: OMO-BSC050N08NS5-1190 |
Nuovo e originale |
|
|
Mfr.#: BSC0502NSIATMA1 |
MOSFET N-CH 30V 26A TDSON-8 |
|
|
Mfr.#: BSC0504NSIATMA1 |
MOSFET N-CH 30V 21A TDSON-8 |
|
|
Mfr.#: BSC050N10NS5ATMA1 |
TRENCH >=100V |
|
|
Mfr.#: BSC050N03LSGATMA1-CUT TAPE |
Nuovo e originale |