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IPB80P04P4L-04

IPB80P04P4L-04
Mfr. #:
IPB80P04P4L-04
Produttore:
Infineon Technologies
Descrizione:
MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB80P04P4L-04 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPB80P04P4L-04 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
40 V
Id - Corrente di scarico continua:
80 A
Rds On - Resistenza Drain-Source:
4.4 mOhms
Vgs - Tensione Gate-Source:
16 V
Qg - Carica cancello:
135 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
125 W
Configurazione:
Separare
Qualificazione:
AEC-Q101
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
4.4 mm
Lunghezza:
10 mm
Serie:
OptiMOS-P2
Tipo di transistor:
1 P-Channel
Larghezza:
9.25 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
65 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
13 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
119 ns
Tempo di ritardo di accensione tipico:
28 ns
Parte # Alias:
IPB80P04P4L04ATMA1 IPB8P4P4L4XT SP000840196
Unità di peso:
0.139332 oz
Tags
IPB80P04P4L-0, IPB80P04P4L, IPB80P04, IPB80P, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB80P04P4L04ATMA1
DISTI # V72:2272_06384141		Infineon Technologies AGTrans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1004
  • 1000:$0.8538
  • 500:$0.8974
  • 250:$0.9963
  • 100:$1.1697
  • 25:$1.5198
  • 10:$1.6907
  • 1:$2.1367
IPB80P04P4L04ATMA1
DISTI # V36:1790_06384141		Infineon Technologies AGTrans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.9296
  • 500000:$0.9298
  • 100000:$0.9463
  • 10000:$0.9738
  • 1000:$0.9784
IPB80P04P4L04ATMA1
DISTI # IPB80P04P4L04ATMA1-ND		Infineon Technologies AGMOSFET P-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.2150
IPB80P04P4L04ATMA1
DISTI # 26195370		Infineon Technologies AGTrans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1004
  • 8:$2.1367
IPB80P04P4L-04
DISTI # IPB80P04P4L-04		Infineon Technologies AGP- CHANNELAUTOMOTIVE MOSF (Alt: IPB80P04P4L-04)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 50000:$1.0101
  • 25000:$1.0231
  • 10000:$1.0364
  • 5000:$1.0500
  • 3000:$1.0784
  • 2000:$1.1083
  • 1000:$1.1400
IPB80P04P4L04ATMA1
DISTI # IPB80P04P4L04ATMA1		Infineon Technologies AGTrans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P04P4L04ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.0129
  • 6000:$1.0319
  • 4000:$1.0679
  • 2000:$1.1079
  • 1000:$1.1489
IPB80P04P4L04ATMA1
DISTI # IPB80P04P4L04ATMA1		Infineon Technologies AGTrans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB80P04P4L04ATMA1)
RoHS: Compliant
Min Qty: 439
Container: Bulk		Americas - 0
  • 4390:$0.7239
  • 2195:$0.7369
  • 1317:$0.7629
  • 878:$0.7909
  • 439:$0.8209
IPB80P04P4L04ATMA1
DISTI # SP000840196		Infineon Technologies AGTrans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000840196)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€1.0119
  • 6000:€1.0529
  • 4000:€1.0869
  • 2000:€1.1709
  • 1000:€1.5069
IPB80P04P4L04ATMA1
DISTI # 49AC0287		Infineon Technologies AGMOSFET, AEC-Q100, P-CH, -40V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0038ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.7V,Power RoHS Compliant: Yes934
  • 1000:$0.9050
  • 500:$0.9550
  • 250:$1.0500
  • 100:$1.2200
  • 50:$1.4000
  • 25:$1.5700
  • 10:$1.7400
  • 1:$1.9800
IPB80P04P4L-04
DISTI # 726-IPB80P04P4L-04		Infineon Technologies AGMOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
RoHS: Compliant		832
  • 1:$1.8900
  • 10:$1.6000
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9320
  • 2000:$0.8680
  • 5000:$0.8360
IPB80P04P4L04ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		7900
  • 1000:$0.7500
  • 500:$0.7900
  • 100:$0.8200
  • 25:$0.8600
  • 1:$0.9200
IPB80P04P4L04ATMA1
DISTI # IPB80P04P4L04		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-40V,-80A,125W,PG-TO263-3458
  • 100:$1.0700
  • 25:$1.1800
  • 5:$1.3300
  • 1:$1.4900
IPB80P04P4L04ATMA1
DISTI # XSKDRABV0046352		Infineon Technologies AGInverter,4000/14000/40000Series,6-Func,1-Input,CMOS, PDSO14
RoHS: Compliant		5000 in Stock0 on Order
  • 5000:$1.4300
  • 1000:$1.5300
IPB80P04P4L04ATMA1
DISTI # 2839456		Infineon Technologies AGMOSFET, AEC-Q100, P-CH, -40V, TO-2631049
  • 100:£0.9480
  • 10:£0.9670
  • 1:£0.9870
IPB80P04P4L04ATMA1
DISTI # 2839456		Infineon Technologies AGMOSFET, AEC-Q100, P-CH, -40V, TO-263
RoHS: Compliant		934
  • 100:$1.9500
  • 25:$2.4000
  • 5:$2.7500
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Disponibilità
Azione:
822
Su ordine:
2805
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Il prezzo attuale di IPB80P04P4L-04 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,89 USD
1,89 USD
10
1,60 USD
16,00 USD
100
1,28 USD
128,00 USD
500
1,12 USD
560,00 USD
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