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SGP23N60UFDTU

SGP23N60UFDTU
Mfr. #:
SGP23N60UFDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors Dis High Perf IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SGP23N60UFDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SGP23N60UFDTU Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
2.1 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
23 A
Pd - Dissipazione di potenza:
100 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
SGP23N60UFD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
23 A
Altezza:
9.4 mm
Lunghezza:
10.1 mm
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
23 A
Corrente di dispersione gate-emettitore:
+/- 100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Parte # Alias:
SGP23N60UFDTU_NL
Unità di peso:
0.063493 oz
Tags
SGP23N60UFD, SGP23N60U, SGP23, SGP2, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Rail
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Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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***rchild Semiconductor
Fairchild's UD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
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Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***el Electronic
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***icroelectronics
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***ure Electronics
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ure Electronics
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***nell
IGBT, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
*** Source Electronics
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***Yang
IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IGP10N60T Series 600 V 24 A Through Hole IGBT TrenchStop - PG-TO-220-3
***ark
Igbt Single Transistor, 600V, To-220-3 Rohs Compliant: Yes |Infineon IGP10N60TXKSA1
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ineon SCT
Infineon's 600 V, 10 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Parte # Mfg. Descrizione Azione Prezzo
SGP23N60UFDTU
DISTI # C1S541901576781		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		5200
  • 2000:$0.9020
  • 500:$1.2700
  • 5:$2.0700
SGP23N60UFDTU
DISTI # SGP23N60UFDTU-ND		ON SemiconductorIGBT 600V 23A 100W TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
  • 1000:$1.0099
SGP23N60UFDTU
DISTI # SGP23N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFDTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7909
  • 2000:$0.7859
  • 4000:$0.7759
  • 6000:$0.7659
  • 10000:$0.7469
SGP23N60UFDTU
DISTI # 512-SGP23N60UFDTU		ON SemiconductorIGBT Transistors Dis High Perf IGBT
RoHS: Compliant		0
    SGP23N60UFDTU
    DISTI # XSFP00000158817    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		1346
    • 1000:$1.9400
    • 1346:$1.7600
    Immagine Parte # Descrizione
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60

    Mfr.#: SGP23N60

    OMO.#: OMO-SGP23N60-1190

    		 Nuovo e originale
    SGP23N60RUFD

    Mfr.#: SGP23N60RUFD

    OMO.#: OMO-SGP23N60RUFD-1190

    		 Nuovo e originale
    SGP23N60UF

    Mfr.#: SGP23N60UF

    OMO.#: OMO-SGP23N60UF-1190

    		 Nuovo e originale
    SGP23N60UFD

    Mfr.#: SGP23N60UFD

    OMO.#: OMO-SGP23N60UFD-1190

    		 Nuovo e originale
    SGP23N60UFD G23N60UFD

    Mfr.#: SGP23N60UFD G23N60UFD

    OMO.#: OMO-SGP23N60UFD-G23N60UFD-1190

    		 Nuovo e originale
    SGP23N60UFDTU_NL

    Mfr.#: SGP23N60UFDTU_NL

    OMO.#: OMO-SGP23N60UFDTU-NL-1190

    		 Nuovo e originale
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 23A 100W TO220-3
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di SGP23N60UFDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,13 USD
    2,13 USD
    10
    1,81 USD
    18,10 USD
    100
    1,45 USD
    145,00 USD
    500
    1,27 USD
    635,00 USD
    1000
    1,05 USD
    1 050,00 USD
    2000
    0,98 USD
    1 960,00 USD
    5000
    0,94 USD
    4 715,00 USD
    10000
    0,91 USD
    9 070,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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