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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPB09N03LA DISTI # IPB09N03LAINTR-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB09N03LAT DISTI # IPB09N03LAT-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB09N03LA G DISTI # IPB09N03LAG-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB09N03LAG DISTI # 726-IPB09N03LAG | Infineon Technologies AG | MOSFET N-Ch 25V 50A D2PAK-2 RoHS: Compliant | 0 | |
| IPB09N03LA | Infineon Technologies AG | MOSFET Transistor, N-Channel, TO-263 | 8611 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPB054N06N3GATMA1 |
MOSFET N-CH 60V 80A TO263-3 |
|
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Mfr.#: IPB073N15N5ATMA1 |
MV POWER MOS |
|
Mfr.#: IPB017N06N 017N06N -7 |
Nuovo e originale |
|
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Mfr.#: IPB021N06N3G OMO.#: OMO-IPB021N06N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB023N06N3G OMO.#: OMO-IPB023N06N3G-1190 |
140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
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|
Mfr.#: IPB034N06N3G , MS10-05AT |
Nuovo e originale |
|
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Mfr.#: IPB049N06L3G OMO.#: OMO-IPB049N06L3G-1190 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB04N03LAT |
MOSFET N-CH 25V 80A D2PAK |
|
|
Mfr.#: IPB054N08N3G,054N08N |
Nuovo e originale |
|
|
Mfr.#: IPB05N03LA |
MOSFET N-CH 25V 80A D2PAK |