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SIHB23N60E-GE3

SIHB23N60E-GE3
Mfr. #:
SIHB23N60E-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 600V 23A D2PAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB23N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHB23N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 600V 23A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 23A D2PAK
***ark
MOSFET, N CH, 600V, 23A, TO-263-3
***
N-CH 600V D2PAK
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 600V, 23A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB23N60E-GE3
DISTI # SIHB23N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 23A D2PAK
Min Qty: 1
Container: Tube		999In Stock
  • 2500:$1.8766
  • 500:$2.3423
  • 100:$2.7515
  • 50:$3.1748
  • 10:$3.3580
  • 1:$3.7400
SIHB23N60E-GE3
DISTI # SIHB23N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 23A 3-Pin D2PAK - Tape and Reel (Alt: SIHB23N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.7900
  • 10000:$1.7900
  • 2000:$1.8900
  • 4000:$1.8900
  • 1000:$1.9900
SIHB23N60E-GE3
DISTI # SIHB23N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 23A 3-Pin D2PAK (Alt: SIHB23N60E-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€1.3900
  • 300:€1.4900
  • 200:€1.6900
  • 100:€2.0900
  • 50:€2.5900
SIHB23N60E-GE3
DISTI # 40X8671		Vishay IntertechnologiesMOSFET Transistor, N Channel, 23 A, 600 V, 0.132 ohm, 10 V RoHS Compliant: Yes
RoHS: Compliant		151
  • 1000:$2.3600
  • 500:$2.7900
  • 100:$3.4200
  • 50:$3.6600
  • 25:$3.9000
  • 10:$4.1400
  • 1:$4.6300
SIHB23N60E-GE3
DISTI # 78-SIHB23N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1000
  • 1:$3.9500
  • 10:$3.2700
  • 100:$2.6900
  • 250:$2.6100
  • 500:$2.3400
  • 1000:$1.9700
  • 2000:$1.8700
SIHB23N60E-GE3
DISTI # 2400377		Vishay IntertechnologiesMOSFET, N CH, 600V, 23A, TO-263-3
RoHS: Compliant		151
  • 2500:$2.9800
  • 500:$3.7100
  • 100:$4.3600
  • 50:$5.0300
  • 10:$5.3200
  • 1:$5.9200
SIHB23N60E-GE3
DISTI # 2400377		Vishay IntertechnologiesMOSFET, N CH, 600V, 23A, TO-263-3181
  • 500:£2.1500
  • 250:£2.3200
  • 100:£2.6400
  • 10:£3.1900
  • 1:£3.9800
SIHB23N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    Immagine Parte # Descrizione
    SIHB23N60E-GE3

    Mfr.#: SIHB23N60E-GE3

    OMO.#: OMO-SIHB23N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB23N60E-GE3

    Mfr.#: SIHB23N60E-GE3

    OMO.#: OMO-SIHB23N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 23A D2PAK
    Disponibilità
    Azione:
    Available
    Su ordine:
    3500
    Inserisci la quantità:
    Il prezzo attuale di SIHB23N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,37 USD
    2,37 USD
    10
    2,25 USD
    22,51 USD
    100
    2,13 USD
    213,24 USD
    500
    2,01 USD
    1 006,95 USD
    1000
    1,90 USD
    1 895,50 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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