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FCP13N60N

FCP13N60N
Mfr. #:
FCP13N60N
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V, 13A, N-Chan
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCP13N60N Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
13 A
Rds On - Resistenza Drain-Source:
244 mOhms
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
116 W
Configurazione:
Separare
Nome depositato:
SupreMOS
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCP13N60N
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET a canale N
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
16.3 S
Tempo di caduta:
9.8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10.6 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
454 ns
Tempo di ritardo di accensione tipico:
14.5 ns
Unità di peso:
0.063493 oz
Tags
FCP13N, FCP13, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 13 A, 258 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
***ure Electronics
Single N-Channel 600 V 0.258 Ohm 39.5 nC 33.8 W Silicon Mosfet - TO-220-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,13A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.244ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:116W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Parte # Mfg. Descrizione Azione Prezzo
FCP13N60N
DISTI # V36:1790_06359904		ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS400
  • 500:$1.6070
  • 250:$1.7440
  • 100:$2.3180
  • 25:$2.4779
  • 10:$2.7530
  • 1:$3.5574
FCP13N60N
DISTI # FCP13N60NFS-ND		ON SemiconductorMOSFET N-CH 600V 13A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		370In Stock
  • 5600:$1.6584
  • 3200:$1.7231
  • 800:$2.1507
  • 100:$2.5264
  • 25:$2.9152
  • 10:$3.0840
  • 1:$3.4300
FCP13N60N
DISTI # 32673048		ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS1600
  • 800:$3.5574
FCP13N60N
DISTI # 32438410		ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS1600
  • 800:$1.6462
FCP13N60N
DISTI # 32624600		ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS400
  • 4:$3.5574
FCP13N60N
DISTI # FCP13N60N		ON SemiconductorTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail (Alt: FCP13N60N)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.3900
  • 100:€1.4900
  • 500:€1.4900
  • 50:€1.5900
  • 10:€1.6900
  • 25:€1.6900
  • 1:€1.8900
FCP13N60N
DISTI # FCP13N60N		ON SemiconductorTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: FCP13N60N)
RoHS: Not Compliant
Min Qty: 172
Container: Bulk		Americas - 0
  • 344:$1.7900
  • 516:$1.7900
  • 860:$1.7900
  • 1720:$1.7900
  • 172:$1.8900
FCP13N60N
DISTI # FCP13N60N		ON SemiconductorTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FCP13N60N)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 3200:$1.4900
  • 4800:$1.4900
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
FCP13N60N
DISTI # 64R2986		ON SemiconductorSM 600V 258MOHM F TO220 / TUBE0
  • 10000:$1.7200
  • 2500:$1.8300
  • 1000:$1.9200
  • 500:$2.2700
  • 100:$2.5100
  • 10:$3.0400
  • 1:$3.7600
FCP13N60N
DISTI # 512-FCP13N60N		ON SemiconductorMOSFET 600V, 13A, N-Chan
RoHS: Compliant		591
  • 1:$3.2600
  • 10:$2.7700
  • 100:$2.4000
  • 250:$2.2800
  • 500:$2.0400
  • 1000:$1.7700
FCP13N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6133
  • 1000:$1.8000
  • 500:$1.9000
  • 100:$1.9800
  • 25:$2.0600
  • 1:$2.2200
FCP13N60N
DISTI # 7396143P		ON SemiconductorMOSFET N-CHANNEL 600V 13A TO220, TU271
  • 200:£2.9300
  • 100:£3.1600
  • 50:£3.3900
  • 10:£3.7000
FCP13N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Not Compliant		200
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    Su ordine:
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