SI2601DN-T1-GE3

SI2601DN-T1-GE3
Mfr. #:
SI2601DN-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
RF Bipolar Transistors MOSFET 20V 19mohm @ 4.5V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI2601DN-T1-GE3 Scheda dati
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ECAD Model:
Maggiori informazioni:
SI2601DN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay / Siliconix
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
SI2601DN-GE3
Tecnologia
si
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Resistenza
19 mOhms
Polarità del transistor
Canale P
Tags
SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descrizione Azione Prezzo
SI2601DN-T1-GE3
DISTI # 781-SI2601DN-GE3
Vishay IntertechnologiesMOSFET 20V 19mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3920
  • 6000:$0.3730
  • 9000:$0.3590
Immagine Parte # Descrizione
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3

MOSFET 20V 19mohm @ 4.5V
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3-317

RF Bipolar Transistors MOSFET 20V 19mohm @ 4.5V
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di SI2601DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,54 USD
0,54 USD
10
0,51 USD
5,12 USD
100
0,48 USD
48,47 USD
500
0,46 USD
228,85 USD
1000
0,43 USD
430,80 USD
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