IKQ50N120CT2XKSA1

Mfr. #:: IKQ50N120CT2XKSA1
Produttore:: Infineon Technologies
Descrizione:: IGBT 1200V 100A TO247-3-46
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IKQ50N120CT2XKSA1 Scheda dati
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Tags: IKQ5, IKQ

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IKQ50N120CT2XKSA1 Descrizione

***Components: In a Tube of 30, Infineon IKQ50N120CT2XKSA1 P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247

***ical: Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube

***ronik: IGBT 1200V 50A 1,75V TO247-3

***i-Key: IGBT 1200V 100A TO247-3-46

***et: IGBT PRODUCTS

***ark: Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, 1.2KV, 100A, 652W, TO-247; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, 1.2KV, 100A, 652W, TO-247; Corrente di Collettore CC:100A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:652W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Motor control; Industrial drives; Other low speed hard switching applications (f sw <20kHz)

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IKQ50N120CT2XKSA1 DISTI # IKQ50N120CT2XKSA1-ND	Infineon Technologies AG	IGBT 1200V 100A TO247-3-46 RoHS: Compliant Min Qty: 1 Container: Tube	146In Stock	720:$8.4663 240:$9.5173 25:$10.8020 10:$11.2690 1:$12.2600
IKQ50N120CT2XKSA1 DISTI # IKQ50N120CT2XKSA1	Infineon Technologies AG	IGBTs - Rail/Tube (Alt: IKQ50N120CT2XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$6.9900 1440:$7.0900 960:$7.3900 480:$7.6900 240:$7.9900
IKQ50N120CT2XKSA1 DISTI # SP001272736	Infineon Technologies AG	IGBTs (Alt: SP001272736) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€5.7900 500:€6.1900 100:€6.3900 50:€6.6900 25:€6.8900 10:€7.1900 1:€7.8900
IKQ50N120CT2XKSA1 DISTI # 93AC7070	Infineon Technologies AG	IGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	173	500:$8.1400 250:$8.7000 100:$9.1500 50:$9.7700 25:$10.3800 10:$10.8400 1:$11.7900
IKQ50N120CT2XKSA1 DISTI # 726-IKQ50N120CT2XKSA	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	442	1:$11.6700 10:$10.7300 25:$10.2800 100:$9.0600 250:$8.6100 500:$8.0600
IKQ50N120CT2XKSA1 DISTI # 1623284	Infineon Technologies AG	IGBT 1200V 50A TRENCHSTOP2 DIODE TO-247, TU	194	600:£5.7910 300:£6.2050 150:£6.6820 30:£7.2390
IKQ50N120CT2XKSA1 DISTI # IKQ50N120CT2	Infineon Technologies AG	Transistor: IGBT,1.2kV,50A,151W,TO247-3	477	30:$8.6000 10:$9.2200 3:$10.2600 1:$11.6100
IKQ50N120CT2XKSA1 DISTI # 2986435	Infineon Technologies AG	IGBT, 1.2KV, 100A, 652W, TO-247	165	100:£6.5600 50:£7.0100 10:£7.4600 5:£8.4500 1:£8.9700
IKQ50N120CT2XKSA1 DISTI # 2986435	Infineon Technologies AG	IGBT, 1.2KV, 100A, 652W, TO-247 RoHS: Compliant	163	250:$10.4900 100:$10.5900 50:$11.8100 10:$12.6300 5:$13.1000 1:$13.5900

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IKQ50N120CT2XKSA1 OMO.#: OMO-IKQ50N120CT2XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKQ50N120CH3XKSA1 OMO.#: OMO-IKQ50N120CH3XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKQ50N120CH3 OMO.#: OMO-IKQ50N120CH3-1190	Nuovo e originale
	Mfr.#: IKQ50N120CH3XKSA1 OMO.#: OMO-IKQ50N120CH3XKSA1-INFINEON-TECHNOLOGIES	IGBT HS SW 1200V 50A TO-247-3
	Mfr.#: IKQ50N120CT2 OMO.#: OMO-IKQ50N120CT2-1190	IGBT 1200V 50A 1,75V TO247-3
	Mfr.#: IKQ50N120CT2XKSA1 OMO.#: OMO-IKQ50N120CT2XKSA1-INFINEON-TECHNOLOGIES	IGBT 1200V 100A TO247-3-46

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Azione:: Available
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Il prezzo attuale di IKQ50N120CT2XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~9,87 USD~~; ~~9,87 USD~~

10: ~~9,38 USD~~; ~~93,76 USD~~

100: ~~8,88 USD~~; ~~888,24 USD~~

500: ~~8,39 USD~~; ~~4 194,45 USD~~

1000: ~~7,90 USD~~; ~~7 895,50 USD~~

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IKQ50N120CT2XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes