AS4C64M8D3L-12BCNTR

Mfr. #:: AS4C64M8D3L-12BCNTR
Produttore:: Alliance Memory
Descrizione:: DRAM 512M 1.35V 800Mhz 64M x 8 DDR3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: AS4C64M8D3L-12BCNTR Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: AS4C64M8D3L-12BCNTR maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Memoria dell'Alleanza

Categoria di prodotto:: DRAM

RoHS:: Y

Tipo:: SDRAM - DDR3L

Larghezza bus dati:: 8 bit

Organizzazione:: 64 M x 8

Dimensione della memoria:: 512 Mbit

Frequenza massima di clock:: 800 MHz

Tensione di alimentazione - Max:: 1.35 V

Temperatura di esercizio minima:: 0 C

Temperatura massima di esercizio:: + 95 C

Serie:: AS4C64M8D3L

Confezione:: Bobina

Marca:: Memoria dell'Alleanza

Stile di montaggio:: SMD/SMT

Sensibile all'umidità:: sì

Tipologia di prodotto:: DRAM

Quantità confezione di fabbrica:: 2500

sottocategoria:: Memoria e archiviazione dati

Tags: AS4C64M8D3L, AS4C64M8D3, AS4C64M8D, AS4C64M8, AS4C6, AS4C, AS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS4C64M8D3L-12BCNTR Valutazioni e recensioni

K***s

2019-06-07

H***v

Super seller

2019-04-04

R***r

Works perfectly out of the box, tested it with arduino Liquid Criystal I2C library.

2019-07-30

AS4C64M8D3L-12BCNTR Descrizione

***et: DRAM Chip DDR3 SDRAM 512Mbit 64M X 8 78-Pin FBGA T/R

***i-Key: IC DRAM 512MBIT PARALLEL 78FBGA

AS4C64M8D3L-12BCNTR Maggiori informazioni

DDR3L SDRAM: Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
AS4C64M8D3L-12BCNTR DISTI # AS4C64M8D3L-12BCNTR-ND	Alliance Memory Inc	IC DRAM 512M PARALLEL 78FBGA RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$2.7443
AS4C64M8D3L-12BCNTR DISTI # AS4C64M8D3L-12BCNTR	Alliance Memory Inc	DRAM Chip DDR3 SDRAM 512Mbit 64M X 8 78-Pin FBGA T/R - Tape and Reel (Alt: AS4C64M8D3L-12BCNTR) Min Qty: 2500 Container: Reel	Americas - 0	15000:$2.0900 25000:$2.0900 5000:$2.1900 10000:$2.1900 2500:$2.2900
AS4C64M8D3L-12BCN DISTI # 913-AS4C64M8D3L12BCN	Alliance Memory Inc	DRAM 512M 1.35V 800Mhz 64M x 8 DDR3 RoHS: Compliant	484	1:$3.9200 10:$3.5500 25:$3.4800 50:$3.4600 100:$3.1000 250:$3.0900 500:$2.9800 1000:$2.7000 2000:$2.5700
AS4C64M8D3L-12BCNTR DISTI # 913-A4C64M8D3L12BCNT	Alliance Memory Inc	DRAM 512M 1.35V 800Mhz 64M x 8 DDR3 RoHS: Compliant	0	2500:$2.6500

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: AS4C64M8D1-5TCNTR OMO.#: OMO-AS4C64M8D1-5TCNTR	DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
	Mfr.#: AS4C64M8D2-25BANTR OMO.#: OMO-AS4C64M8D2-25BANTR	DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
	Mfr.#: AS4C64M8D3L-12BCN OMO.#: OMO-AS4C64M8D3L-12BCN	DRAM 512M 1.35V 800Mhz 64M x 8 DDR3
	Mfr.#: AS4C64M8D1-5BCN OMO.#: OMO-AS4C64M8D1-5BCN	DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
	Mfr.#: AS4C64M8D1-5TCN OMO.#: OMO-AS4C64M8D1-5TCN	DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
	Mfr.#: AS4C64M8D1-5TCNTR OMO.#: OMO-AS4C64M8D1-5TCNTR-ALLIANCE-MEMORY	DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
	Mfr.#: AS4C64M8D1-5BCN OMO.#: OMO-AS4C64M8D1-5BCN-ALLIANCE-MEMORY	DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
	Mfr.#: AS4C64M8D2-25BIN OMO.#: OMO-AS4C64M8D2-25BIN-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 60FBGA
	Mfr.#: AS4C64M8D3-12BCNTR OMO.#: OMO-AS4C64M8D3-12BCNTR-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 78FBGA
	Mfr.#: AS4C64M8D3L-12BIN OMO.#: OMO-AS4C64M8D3L-12BIN-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 78FBGA

Disponibilità

Azione:: Available
Su ordine:: 3000
Inserisci la quantità:

Il prezzo attuale di AS4C64M8D3L-12BCNTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Iniziare con

AS4C64M8D3L 4
AS4C64M8D3 8
AS4C64M8D 22
AS4C64M8 27
AS4C6 119
AS4C 824
AS4 1355

Prodotti più recenti

High-Speed DDR3 and DDR3L SDRAMs

Alliance Memory's line of high-speed CMOS double data rate 3 synchronous DRAMs and low-voltage DDR3L SDRAMs feature densities of 1 Gb, 2 Gb, and 4 Gb.
MIC22405 Buck Regulator

MIC22405 4A integrated switch synchronous buck regulators from Microchip are frequency programmable up to 4 MHz with input voltage range of 2.9 V to 5.5 V.
TC Series Aluminum Electrolytic Capacitors

Panasonic introduces the TC series of aluminum electrolytic capacitors.
Compare AS4C64M8D3L-12BCNTR

AS4C64M8D3L12BCN vs AS4C64M8D3L12BCNTR vs AS4C64M8D3L12BIN
AQV25_G3 Series PhotoMOS® Relays

Panasonic's AQV25_G3 series high capacity PhotoMOS® relays provide greatly increased load current in a compact DIP package.
DM240004 PIC24F Curiosity Development Board

Microchip's PIC24F curiosity development board is a cost-effective, fully integrated 16-bit development platform targeted at first-time users.