SIA810DJ-T1-GE3

SIA810DJ-T1-GE3
Mfr. #:
SIA810DJ-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIA810DJ-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA810DJ-T1-GE3 DatasheetSIA810DJ-T1-GE3 Datasheet (P4-P6)SIA810DJ-T1-GE3 Datasheet (P7-P9)SIA810DJ-T1-GE3 Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-SC70-6
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
0.75 mm
Lunghezza:
2.05 mm
Serie:
SIA
Larghezza:
2.05 mm
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SIA810DJ-GE3
Unità di peso:
0.000988 oz
Tags
SIA81, SIA8, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET N-CH 20V 4.5A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:4500mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.077ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
SIA810DJ-T1-GE3
DISTI # SIA810DJ-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.4158
SIA810DJ-T1-GE3
DISTI # SIA810DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA810DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIA810DJ-T1-GE3
DISTI # 781-SIA810DJ-T1-GE3
Vishay IntertechnologiesMOSFET 20V 4.5A 6.5W 53mohm @ 4.5V
RoHS: Compliant
0
    Immagine Parte # Descrizione
    SIA810DJ-T1-GE3

    Mfr.#: SIA810DJ-T1-GE3

    OMO.#: OMO-SIA810DJ-T1-GE3

    MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
    SIA810DJ-T1-E3

    Mfr.#: SIA810DJ-T1-E3

    OMO.#: OMO-SIA810DJ-T1-E3

    MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
    SIA810DJ-T1-GE3

    Mfr.#: SIA810DJ-T1-GE3

    OMO.#: OMO-SIA810DJ-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 53mohm @ 4.5V
    SIA810DJ-T1-E3

    Mfr.#: SIA810DJ-T1-E3

    OMO.#: OMO-SIA810DJ-T1-E3-VISHAY

    MOSFET N-CH 20V 4.5A SC-70-6
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di SIA810DJ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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