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IXTP3N50P

IXTP3N50P
Mfr. #:
IXTP3N50P
Produttore:
IXYS
Descrizione:
Darlington Transistors MOSFET 3.6 Amps 500 V 2 Ohm Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTP3N50P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXTP3N50
Confezione
Tubo
Unità di peso
0.081130 oz
Stile di montaggio
Foro passante
Nome depositato
PolarHV
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
70 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
12 ns
Ora di alzarsi
15 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
3.6 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
5.5 V
Rds-On-Drain-Source-Resistenza
2 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
38 ns
Tempo di ritardo all'accensione tipico
15 ns
Qg-Gate-Carica
9.3 nC
Transconduttanza diretta-Min
2.5 S
Modalità canale
Aumento
Tags
IXTP3N5, IXTP3N, IXTP3, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 500V 3.6A 3-Pin (3+Tab) TO-220
***ukat
N-Ch 500V 3,6A 70W 2R TO220AB
***S
new, original packaged
***el Nordic
Contact for details
***roFlash
N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in TO-220FP package
***icroelectronics
N-Channel 500V - 1.22 Ohm - 4.4A Zener-Protected SuperMESH(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP5NK50 Series 500 V 4.4 A 1.5 Ohm Through Hole N-Ch Power MOSFET - TO-220FPAB
***ark
N CHANNEL MOSFET, 500V, 4.4A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Contin
***emi
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 4.2 A, 1.75 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 4.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 4.2A I(D), 500V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, UNITFET, 500V, 4.2A, TO-220; N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; MSL:-
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω, TO-220F
***ark
500V, 4A, 2.0 ohm, NCH MOSFET FRFET - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
***et
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220F Rail
***roFlash
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 4.5 A, 1.5 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***inecomponents.com
UniFET2 500V N-channel MOSFET, TO220F Single gage
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, UNITFET, 500V, 4.5A, TO-220; N CH MOSFET, UNITFET, 500V, 4.5A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***i-Key
MOSFET N-CH 500V 3A TO-220F
***ser
MOSFETs 500V N-Channel QFET
***Yang
N-CH/500V/4A/1.8OHM - Bulk
***el Nordic
Contact for details
***icroelectronics
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP
***(Formerly Allied Electronics)
STP4NK60ZFP, N-channel MOSFET Transistor 4A 600V, 3-Pin TO-220FP
*** Source Electronics
MOSFET N-CH 600V 4A TO-220FP / Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:25W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parte # Mfg. Descrizione Azione Prezzo
IXTP3N50P
DISTI # IXTP3N50P-ND		IXYS CorporationMOSFET N-CH 500V 3.6A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
  • 50:$1.1396
EVLB001
DISTI # EVLB001-ND		IXYS CorporationKIT EVAL DIMMABLE LIGHT BALLAST
RoHS: Compliant
Min Qty: 1
Container: Box		Limited Supply - Call
    EVLB002
    DISTI # EVLB002-ND    		IXYS CorporationKIT EVAL NONDIM LIGHT BALLAST
    RoHS: Compliant
    Min Qty: 1
    Container: Box    		Limited Supply - Call
      IXTP3N50P
      DISTI # 747-IXTP3N50P      		IXYS CorporationMOSFET 3.6 Amps 500 V 2 Ohm Rds
      RoHS: Compliant      		202
      • 1:$1.3200
      • 10:$1.1900
      • 25:$1.0400
      • 50:$0.9710
      • 100:$0.9580
      • 250:$0.7770
      • 500:$0.7450
      • 1000:$0.6170
      • 2500:$0.5180
      Immagine Parte # Descrizione
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      OMO.#: OMO-IXTP230N04T4

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      		 MOSFET 140 Amps 0V
      IXTP12N50PM

      Mfr.#: IXTP12N50PM

      OMO.#: OMO-IXTP12N50PM-IXYS-CORPORATION

      		 MOSFET N-CH 500V 6A TO-220
      IXTP160N075T

      Mfr.#: IXTP160N075T

      OMO.#: OMO-IXTP160N075T-IXYS-CORPORATION

      		 MOSFET N-CH 75V 160A TO-220
      IXTP170N075T2

      Mfr.#: IXTP170N075T2

      OMO.#: OMO-IXTP170N075T2-IXYS-CORPORATION

      		 MOSFET N-CH 75V 170A TO-220
      IXTP240N055T

      Mfr.#: IXTP240N055T

      OMO.#: OMO-IXTP240N055T-IXYS-CORPORATION

      		 MOSFET N-CH 55V 240A TO-220
      IXTP44P15T

      Mfr.#: IXTP44P15T

      OMO.#: OMO-IXTP44P15T-IXYS-CORPORATION

      		 Darlington Transistors MOSFET -44 Amps -150V 0.065 Rds
      IXTP2N60P

      Mfr.#: IXTP2N60P

      OMO.#: OMO-IXTP2N60P-IXYS-CORPORATION

      		 IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
      IXTP110N055T2

      Mfr.#: IXTP110N055T2

      OMO.#: OMO-IXTP110N055T2-IXYS-CORPORATION

      		 IGBT Transistors MOSFET 110 Amps 55V 0.0066 Rds
      IXTP08N100P

      Mfr.#: IXTP08N100P

      OMO.#: OMO-IXTP08N100P-IXYS-CORPORATION

      		 IGBT Transistors MOSFET 0.8 Amps 1000V 20 Rds
      Disponibilità
      Azione:
      Available
      Su ordine:
      2500
      Inserisci la quantità:
      Il prezzo attuale di IXTP3N50P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,78 USD
      0,78 USD
      10
      0,74 USD
      7,38 USD
      100
      0,70 USD
      69,93 USD
      500
      0,66 USD
      330,25 USD
      1000
      0,62 USD
      621,60 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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