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IRLHS6342TRPBF

IRLHS6342TRPBF
Mfr. #:
IRLHS6342TRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 30V 8.7A PQFN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRLHS6342TRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRLHS6342TRPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Bobina
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PQFN-6
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Single Quint Drain Dual Source
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
2.1 W
Vgs-Gate-Source-Voltage
12 V
Id-Continuo-Scarico-Corrente
19 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
15.5 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
11 nC
Tags
IRLHS634, IRLHS63, IRLHS6, IRLHS, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***ure Electronics
Single N-Channel 30 V 19.5 mOhm 11 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ment14 APAC
N CH MOSFET, 30V, 8.7A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.7A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V
***nell
MOSFET,N CH,30V,8.7A,PQFN22; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Transistor Case Style:QFN; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:2.1W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Ultra Compact PQFN HEXFET® Power MOSFETs
Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize Infineon latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.Learn More
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
Parte # Mfg. Descrizione Azione Prezzo
IRLHS6342TRPBF
DISTI # V72:2272_13889593		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		4850
  • 3000:$0.1773
  • 1000:$0.1792
  • 500:$0.2210
  • 250:$0.2234
  • 100:$0.2259
  • 25:$0.3240
  • 10:$0.3281
  • 1:$0.3765
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 8.7A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7732In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.7A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7732In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.7A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.2131
IRLHS6342TRPBF
DISTI # 26196121		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		4850
  • 3000:$0.1773
  • 1000:$0.1792
  • 500:$0.2210
  • 250:$0.2234
  • 100:$0.2259
  • 51:$0.3240
IRLHS6342TRPBF
DISTI # 30609428		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 56:$0.4475
IRLHS6342TRPBF
DISTI # 27495321		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
RoHS: Compliant		1811
  • 391:$0.1600
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R - Cut TR (SOS) (Alt: IRLHS6342TRPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 1450
  • 1:$0.1519
  • 40:$0.1509
  • 100:$0.1509
  • 200:$0.1499
  • 500:$0.1499
  • 1000:$0.1499
  • 2000:$0.1489
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R (Alt: IRLHS6342TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.1674
  • 8000:$0.1606
  • 12000:$0.1584
  • 20000:$0.1522
  • 40000:$0.1503
  • 100000:$0.1465
  • 200000:$0.1429
IRLHS6342TRPBF
DISTI # IRLHS6342TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRLHS6342TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1439
  • 8000:$0.1379
  • 16000:$0.1329
  • 24000:$0.1289
  • 40000:$0.1269
IRLHS6342TRPBF
DISTI # SP001573840		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R (Alt: SP001573840)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2449
  • 8000:€0.1909
  • 16000:€0.1559
  • 24000:€0.1319
  • 40000:€0.1219
IRLHS6342TRPBF
DISTI # 25T5527		Infineon Technologies AGN CHANNEL MOSFET, 30V, 8.7A, 6-PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:8.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes1811
  • 1:$0.1280
  • 25:$0.1280
  • 50:$0.1280
  • 100:$0.1280
  • 250:$0.1280
  • 500:$0.1280
  • 1000:$0.1280
IRLHS6342TRPBF.
DISTI # 29AC7092		Infineon Technologies AGContinuous Drain Current Id:8.7A,Drain Source Voltage Vds:30V,Automotive Qualification Standard:- RoHS Compliant: Yes0
    IRLHS6342TRPBF
    DISTI # 70411471    		Infineon Technologies AGIRLHS6342TRPBF N-channel MOSFET Transistor,8.7 A,30 V,6-Pin PQFN
    RoHS: Compliant    		0
    • 10:$0.5270
    IRLHS6342TRPBF
    DISTI # 942-IRLHS6342TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC
    RoHS: Compliant    		6047
    • 1:$0.5500
    • 10:$0.4520
    • 100:$0.2760
    • 1000:$0.2130
    • 4000:$0.1820
    IRLHS6342TRPBFInternational RectifierPower Field-Effect Transistor, 8.7A I(D), 30V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		4000
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    IRLHS6342TRPBF
    DISTI # 7377259P    		Infineon Technologies AGMOSFET N-CHANNEL 30V 8.7A HEXFET PQFN6EP, RL2030
    • 100:£0.1920
    • 200:£0.1700
    • 500:£0.1590
    IRLHS6342TRPBFInfineon Technologies AGINSTOCK5052
      IRLHS6342TRPBF
      DISTI # 2131526      		Infineon Technologies AGN CH MOSFET, 30V, 8.7A, 6-PQFN
      RoHS: Compliant      		1811
      • 1:$0.8710
      • 10:$0.7160
      • 100:$0.4370
      • 1000:$0.3380
      • 4000:$0.2880
      IRLHS6342TRPBF
      DISTI # 2131526      		Infineon Technologies AGN CH MOSFET, 30V, 8.7A, 6-PQFN
      RoHS: Compliant      		1811
      • 1:£0.4940
      • 10:£0.2970
      • 100:£0.2020
      • 250:£0.1830
      • 500:£0.1710
      IRLHS6342TRPBF
      DISTI # C1S322000502233      		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
      RoHS: Compliant      		4850
      • 250:$0.2313
      • 100:$0.2320
      • 25:$0.3293
      • 10:$0.3310
      IRLHS6342TRPBF
      DISTI # C1S322000502224      		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
      RoHS: Compliant      		4000
      • 100:$0.1940
      • 50:$0.2380
      • 10:$0.3580
      IRLHS6342TRPBF
      DISTI # C1S327400181130      		Infineon Technologies AGTrans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
      RoHS: Compliant      		4000
      • 100:$0.2640
      • 50:$0.2880
      • 10:$0.4330
      Immagine Parte # Descrizione
      IRLHS6342TRPBF

      Mfr.#: IRLHS6342TRPBF

      OMO.#: OMO-IRLHS6342TRPBF

      		 MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC
      IRLHS6376TRPBF

      Mfr.#: IRLHS6376TRPBF

      OMO.#: OMO-IRLHS6376TRPBF

      		 MOSFET 30V 1 N-CH HEXFET 2.8nC
      IRLHS6376TR2PBF

      Mfr.#: IRLHS6376TR2PBF

      OMO.#: OMO-IRLHS6376TR2PBF

      		 MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
      IRLHS6342TR2PBF

      Mfr.#: IRLHS6342TR2PBF

      OMO.#: OMO-IRLHS6342TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 8.7A PQFN
      IRLHS6342TRPBF

      Mfr.#: IRLHS6342TRPBF

      OMO.#: OMO-IRLHS6342TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 8.7A PQFN
      IRLHS6342TRPBF.

      Mfr.#: IRLHS6342TRPBF.

      OMO.#: OMO-IRLHS6342TRPBF--1190

      		 Continuous Drain Current Id:8.7A, Drain Source Voltage Vds:30V, Automotive Qualification Standard:- RoHS Compliant: Yes
      IRLHS6376TR2PBF

      Mfr.#: IRLHS6376TR2PBF

      OMO.#: OMO-IRLHS6376TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET 2N-CH 30V 3.6A PQFN
      IRLHS6376TR2PBF-CUT TAPE

      Mfr.#: IRLHS6376TR2PBF-CUT TAPE

      OMO.#: OMO-IRLHS6376TR2PBF-CUT-TAPE-1190

      		 Nuovo e originale
      IRLHS6376TRPBF-CUT TAPE

      Mfr.#: IRLHS6376TRPBF-CUT TAPE

      OMO.#: OMO-IRLHS6376TRPBF-CUT-TAPE-1190

      		 Nuovo e originale
      IRLHS6342TR2PBF.

      Mfr.#: IRLHS6342TR2PBF.

      OMO.#: OMO-IRLHS6342TR2PBF--1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
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      Prezzo di riferimento (USD)
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      1
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      0,18 USD
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      1,67 USD
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      0,15 USD
      74,75 USD
      1000
      0,14 USD
      140,70 USD
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