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IRF9953PBF

IRF9953PBF
Mfr. #:
IRF9953PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2P-CH 30V 2.3A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF9953PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Array
Serie
HEXFETR
Confezione
Imballaggio alternativo del tubo
Unità di peso
0.019048 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
8-SO
Configurazione
Dual
Tipo FET
2 P-Channel (Dual)
Potenza-Max
2W
Tipo a transistor
2 P-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
190pF @ 15V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
2.3A
Rds-On-Max-Id-Vgs
250 mOhm @ 1A, 10V
Vgs-th-Max-Id
1V @ 250μA
Gate-Carica-Qg-Vgs
12nC @ 10V
Pd-Power-Dissipazione
2 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6.9 ns
Ora di alzarsi
14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
- 2.3 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Resistenza
250 mOhms
Polarità del transistor
Canale P
Tempo di ritardo allo spegnimento tipico
20 ns
Tempo di ritardo all'accensione tipico
9.7 ns
Qg-Gate-Carica
6.9 nC
Modalità canale
Aumento
Tags
IRF9953, IRF995, IRF99, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-20V
***ure Electronics
IRF9953PBF: 30 V 2.3 A 250 mOhm SMT Hexfet Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dynamic dv/dt Rating; Fast Switching; Dual P-Channel MOSFET
***ernational Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET P-CH 30V 2.3A 8-Pin SOIC
***Components
MOSFET P-Channel 30V 2.3A SOIC8
***i-Key
MOSFET 2P-CH 30V 2.3A 8-SOIC
***ronik
2xP-CH 30V 2,3A 250mOhm SO-8 RoHSconf
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-30V; Current, Id Cont:2.3A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:F9953; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm
***ment14 APAC
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F9953; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
Parte # Mfg. Descrizione Azione Prezzo
IRF9953TRPBF
DISTI # IRF9953PBFCT-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953TRPBF
DISTI # IRF9953PBFDKR-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953PBF
DISTI # IRF9953PBF-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF9953TRPBF
    DISTI # IRF9953PBFTR-ND    		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 4000:$0.3683
    IRF9953PBF-EL
    DISTI # IRF9953PBF-EL    		Infineon Technologies AGTrans MOSFET P-CH 30V 2.3A 8-Pin SO Tube (Alt: IRF9953PBF-EL)
    RoHS: Compliant
    Min Qty: 95
    Container: Tube    		Europe - 0
      IRF9953PBF
      DISTI # 97K2255      		Infineon Technologies AGMOSFET Transistor, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V RoHS Compliant: Yes0
        IRF9953PBF
        DISTI # 942-IRF9953PBF        		Infineon Technologies AGMOSFET DUAL -30V P-CH 20V VGS MAX
        RoHS: Compliant        		0
          IRF9953PBFInternational RectifierINSTOCK130
            IRF9953PBF
            DISTI # 9102230            		Infineon Technologies AGMOSFET, DUAL, PP, LOGIC, SO-8
            RoHS: Compliant            		0
            • 1:$1.4400
            • 10:$1.1800
            • 100:$0.9280
            • 1000:$0.7800
            • 2000:$0.6870
            Immagine Parte # Descrizione
            IRF9953TRPBF

            Mfr.#: IRF9953TRPBF

            OMO.#: OMO-IRF9953TRPBF

            		 MOSFET MOSFT DUAL PCh -30V 2.3A
            IRF9952QTRPBF

            Mfr.#: IRF9952QTRPBF

            OMO.#: OMO-IRF9952QTRPBF

            		 MOSFET AUTO HEXFET SO-8
            IRF9910TR

            Mfr.#: IRF9910TR

            OMO.#: OMO-IRF9910TR-INFINEON-TECHNOLOGIES

            		 MOSFET 2N-CH 20V 10A 8-SOIC
            IRF9956PBF

            Mfr.#: IRF9956PBF

            OMO.#: OMO-IRF9956PBF-INFINEON-TECHNOLOGIES

            		 MOSFET 2N-CH 30V 3.5A 8-SOIC
            IRF9910PBF-1

            Mfr.#: IRF9910PBF-1

            OMO.#: OMO-IRF9910PBF-1-1190

            		 Nuovo e originale
            IRF9952

            Mfr.#: IRF9952

            OMO.#: OMO-IRF9952-INFINEON-TECHNOLOGIES

            		 MOSFET N/P-CH 30V 8-SOIC
            IRF9952Q

            Mfr.#: IRF9952Q

            OMO.#: OMO-IRF9952Q-1190

            		 Nuovo e originale
            IRF9952QTRPBF

            Mfr.#: IRF9952QTRPBF

            OMO.#: OMO-IRF9952QTRPBF-INFINEON-TECHNOLOGIES

            		 MOSFET N/P-CH 30V 8-SOIC
            IRF9953TR

            Mfr.#: IRF9953TR

            OMO.#: OMO-IRF9953TR-INFINEON-TECHNOLOGIES

            		 MOSFET 2P-CH 30V 2.3A 8-SOIC
            IRF9953TRPBF

            Mfr.#: IRF9953TRPBF

            OMO.#: OMO-IRF9953TRPBF-INFINEON-TECHNOLOGIES

            		 Nuovo e originale
            Disponibilità
            Azione:
            Available
            Su ordine:
            2500
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