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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| NE5510279A-T1-A DISTI # NE5510279A-T1-A | Rochester Electronics LLC | - Bulk (Alt: NE5510279A-T1-A) Min Qty: 171 Container: Bulk | Americas - 0 |
|
| NE5510279A-T1-A | Renesas Electronics Corporation | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | 6462 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: NE5510279A OMO.#: OMO-NE5510279A-1152 |
RF POWER TRANSISTOR |
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Mfr.#: NE5510279A-T1 OMO.#: OMO-NE5510279A-T1-1190 |
Nuovo e originale |
|
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Mfr.#: NE5510279A-T1-A OMO.#: OMO-NE5510279A-T1-A-1152 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
|
|
Mfr.#: NE5510279A-T1-A , EM357- |
Nuovo e originale |
|
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Mfr.#: NE5510279A-T1-A SMD OMO.#: OMO-NE5510279A-T1-A-SMD-1190 |
Nuovo e originale |