NGTB30N60L2WG

NGTB30N60L2WG
Mfr. #:
NGTB30N60L2WG
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors 600V 30A IGBT TO-247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NGTB30N60L2WG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
NGTB30N60L2WG maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Confezione:
Tubo
Marca:
ON Semiconductor
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Tags
NGTB30N60, NGTB30N6, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V
***et
Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
***ark
Transistor, Igbt, N-Ch, 600V, 30A, To247
***el Electronic
RES SMD 1.96M OHM 1% 1/8W 0805
***nell
TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 225mW; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 95A 330000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***nell
IGBT, 600V, 95A, TO-247AC-3; DC Collector Current: 95A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 330W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***et Europe
Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors IR IGBT 600V 600V 48A COPAK-247AC
***(Formerly Allied Electronics)
Transistor IGBT N-ch 600V 60A TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ical
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, AEC-Q101, 600V, TO247AB; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 378W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AB; No.
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
***p One Stop
Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 80A 260.4W TO247A
***nell
IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ical
Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
*** Electronic Components
IGBT Transistors 600V, 40A FIELD STOP IGBT
***i-Key
IGBT FIELD STOP 600V 80A TO247-3
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Parte # Mfg. Descrizione Azione Prezzo
NGTB30N60L2WG
DISTI # NGTB30N60L2WG-ND
ON SemiconductorIGBT 600V 30A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1020:$2.5431
  • 510:$3.0154
  • 120:$3.5422
  • 30:$4.0870
  • 1:$4.8100
NGTB30N60L2WG
DISTI # NGTB30N60L2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N60L2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube
Americas - 0
  • 180:$2.1900
  • 240:$2.1900
  • 420:$2.1900
  • 900:$2.0900
  • 1800:$2.0900
NGTB30N60L2WG
DISTI # 31AC0874
ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.4V,Power Dissipation Pd:225mW,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of , RoHS Compliant: Yes65
  • 1:$4.5800
  • 10:$3.9000
  • 25:$3.7300
  • 50:$3.5500
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
NGTB30N60L2WG
DISTI # 863-NGTB30N60L2WG
ON SemiconductorIGBT Transistors 600V 30A IGBT TO-247
RoHS: Compliant
550
  • 1:$4.5800
  • 10:$3.9000
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
  • 1000:$2.4300
  • 2500:$2.3100
NGTB30N60L2WG
DISTI # 2774810
ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant
65
  • 1:$7.1600
  • 10:$6.2400
  • 100:$5.4100
  • 250:$4.8700
  • 500:$4.2700
  • 1000:$3.8600
NGTB30N60L2WG
DISTI # 2774810
ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant
65
  • 1:£3.8600
  • 10:£2.9500
  • 100:£2.5500
  • 250:£2.4300
  • 500:£2.1800
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OMO.#: OMO-TDA3681JR-N2S

LDO Voltage Regulators MULT VLTG REGULATOR SWITCH/IGNITION BUFF
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Mfr.#: IRLR2905ZTRPBF

OMO.#: OMO-IRLR2905ZTRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 42A DPAK
HCPL0601

Mfr.#: HCPL0601

OMO.#: OMO-HCPL0601-ON-SEMICONDUCTOR

OPTOISO 3.75KV OPN COLLECTOR 8SO
Disponibilità
Azione:
549
Su ordine:
2532
Inserisci la quantità:
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Prezzo di riferimento (USD)
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est. Prezzo
1
4,58 USD
4,58 USD
10
3,90 USD
39,00 USD
100
3,38 USD
338,00 USD
250
3,21 USD
802,50 USD
500
2,88 USD
1 440,00 USD
1000
2,43 USD
2 430,00 USD
2500
2,31 USD
5 775,00 USD
5000
2,22 USD
11 100,00 USD
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