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BSC094N06LS5ATMA1

BSC094N06LS5ATMA1
Mfr. #:
BSC094N06LS5ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET DIFFERENTIATED MOSFETS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC094N06LS5ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PG-TDSON-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
47 A
Rds On - Resistenza Drain-Source:
9.4 mOhms
Vgs th - Tensione di soglia gate-source:
1.1 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
7 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
36 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Serie:
OptiMOS 5
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
22 S
Tempo di caduta:
3 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
3 ns
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
14 ns
Tempo di ritardo di accensione tipico:
4 ns
Parte # Alias:
BSC094N06LS5 SP001458086
Tags
BSC094, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TDSON-8, RoHS
***ark
MOSFET, N-CH, 60V, 47A, 150DEG C, 36W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:47A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 60V, 47A, 150DEG C, 36W; Transistor Polarity: N Channel; Continuous Drain Current Id: 47A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 36W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Parte # Mfg. Descrizione Azione Prezzo
BSC094N06LS5ATMA1
DISTI # BSC094N06LS5ATMA1-ND		Infineon Technologies AGMOSFET N-CHANNEL 60V 47A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.4328
BSC094N06LS5ATMA1
DISTI # BSC094N06LS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 8-Pin TDSON EP - Tape and Reel (Alt: BSC094N06LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.4259
  • 10000:$0.4099
  • 20000:$0.3949
  • 30000:$0.3819
  • 50000:$0.3749
BSC094N06LS5ATMA1
DISTI # 726-BSC094N06LS5ATMA		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		0
  • 1:$0.9800
  • 10:$0.8290
  • 100:$0.6360
  • 500:$0.5630
  • 1000:$0.4440
  • 5000:$0.3940
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Disponibilità
Azione:
Available
Su ordine:
2000
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Il prezzo attuale di BSC094N06LS5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,97 USD
0,97 USD
10
0,83 USD
8,29 USD
100
0,64 USD
63,60 USD
500
0,56 USD
281,50 USD
1000
0,44 USD
444,00 USD
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