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SIB452DK-T1-GE3

SIB452DK-T1-GE3
Mfr. #:
SIB452DK-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 190V 1.5A SC75-6
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIB452DK-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SIB452DK-GE3
Unità di peso
0.003386 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR SC-75-6L
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR SC-75-6L Single
Configurazione
Single Quad Drain Dual Source
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
13W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
190V
Ingresso-Capacità-Ciss-Vds
135pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
1.5A (Tc)
Rds-On-Max-Id-Vgs
2.4 Ohm @ 500mA, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Carica-Qg-Vgs
6.5nC @ 10V
Pd-Power-Dissipazione
2.4 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
15 ns
Ora di alzarsi
16 ns
Vgs-Gate-Source-Voltage
16 V
Id-Continuo-Scarico-Corrente
670 mA
Vds-Drain-Source-Breakdown-Voltage
190 V
Rds-On-Drain-Source-Resistenza
2.4 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
30 ns
Tempo di ritardo all'accensione tipico
12 ns
Modalità canale
Aumento
Tags
SIB452DK, SIB452, SIB45, SIB4, SIB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIB452DK-T1-GE3 N-channel MOSFET Transistor; 0.67 A; 190 V; 6-Pin SC-75
***Components
Supplied as a Tape, N-Channel MOSFET, 670 mA, 190 V, 6-Pin SC-75 Vishay SIB452DK-T1-GE3
***ure Electronics
Single N-Channel 190 V 2.4 Ohms Surface Mount Power Mosfet - PowerPAK SC-75-6L
***et Europe
Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
***ical
Trans MOSFET N-CH 190V 1.5A 6-Pin PowerPAK SC-75 T/R
***i-Key
MOSFET N-CH 190V 1.5A SC75-6
***ronik
N-CH.-FET 1,5A 190V PPAK SC75-6
***
N-CHANNEL 190-V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:670Ma; Drain Source Voltage Vds:190V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; No. Of Pins:6Pins Rohs Compliant: No
***nell
MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC75; No. of Pins:6; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; Transistor Case Style:PowerPAK SC75; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Parte # Mfg. Descrizione Azione Prezzo
SIB452DK-T1-GE3
DISTI # V72:2272_09216871		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
RoHS: Compliant		2000
  • 1000:$0.2844
  • 500:$0.3444
  • 250:$0.3958
  • 100:$0.4002
  • 25:$0.4638
  • 10:$0.5153
  • 1:$0.6108
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19310In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19310In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		18000In Stock
  • 3000:$0.3190
SIB452DK-T1-GE3
DISTI # 30571749		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
RoHS: Compliant		2000
  • 1000:$0.2844
  • 500:$0.3444
  • 250:$0.3958
  • 100:$0.4002
  • 26:$0.4638
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€0.4799
  • 6000:€0.3269
  • 12000:€0.2819
  • 18000:€0.2599
  • 30000:€0.2419
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB452DK-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2829
  • 6000:$0.2749
  • 12000:$0.2639
  • 18000:$0.2559
  • 30000:$0.2489
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIB452DK-T1-GE3
    DISTI # 19X1929    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V , RoHS Compliant: Yes2780
    • 1:$0.8000
    • 10:$0.6380
    • 25:$0.5870
    • 50:$0.5360
    • 100:$0.4850
    • 250:$0.4430
    • 500:$0.4000
    • 1000:$0.3200
    SIB452DK-T1-GE3.
    DISTI # 28AC2101    		Vishay IntertechnologiesN-CH PPAKSC75 190V 2.4 OHM @ 4.5V , ROHS COMPLIANT: NO0
    • 1:$0.2830
    • 6000:$0.2750
    • 12000:$0.2640
    • 18000:$0.2560
    • 30000:$0.2490
    SIB452DK-T1-GE3
    DISTI # 70616558    		Vishay SiliconixSIB452DK-T1-GE3 N-channel MOSFET Transistor,0.67 A,190 V,6-Pin SC-75
    RoHS: Compliant    		0
    • 300:$0.4200
    • 600:$0.3700
    • 1500:$0.3400
    • 3000:$0.2900
    SIB452DK-T1-GE3
    DISTI # 781-SIB452DK-T1-GE3    		Vishay IntertechnologiesMOSFET 190V Vds 16V Vgs PowerPAK SC-75
    RoHS: Compliant    		6525
    • 1:$0.8000
    • 10:$0.6380
    • 100:$0.4850
    • 500:$0.4000
    • 1000:$0.3200
    • 3000:$0.2900
    • 6000:$0.2710
    • 9000:$0.2610
    SIB452DK-T1-GE3
    DISTI # 8141253P    		Vishay IntertechnologiesTRANS MOSFET N-CH 190V 0.67A, RL5980
    • 60:£0.2530
    • 200:£0.2520
    • 400:£0.2510
    • 800:£0.2490
    SIB452DK-T1-GE3
    DISTI # C1S803601460440    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		2000
    • 250:$0.3956
    • 100:$0.3999
    • 25:$0.4635
    • 10:$0.5150
    SIB452DK-T1-GE3
    DISTI # 2364070    		Vishay IntertechnologiesMOSFET, N-CH, 190V, 1.5A, PPAKSC75
    RoHS: Compliant    		2775
    • 5:£0.4300
    • 25:£0.2700
    • 100:£0.2690
    • 250:£0.2680
    • 500:£0.2650
    SIB452DK-T1-GE3
    DISTI # 2364070    		Vishay IntertechnologiesMOSFET, N-CH, 190V, 1.5A, PPAKSC75
    RoHS: Compliant    		2775
    • 1:$1.2800
    • 10:$1.0100
    • 100:$0.7680
    • 500:$0.6340
    • 1000:$0.5070
    • 3000:$0.4590
    • 6000:$0.4290
    • 9000:$0.4130
    SIB452DK-T1-GE3Vishay IntertechnologiesMOSFET 190V Vds 16V Vgs PowerPAK SC-75
    RoHS: Compliant    		Americas - 18000
      Immagine Parte # Descrizione
      SIB452DK-T1-GE3

      Mfr.#: SIB452DK-T1-GE3

      OMO.#: OMO-SIB452DK-T1-GE3

      		 MOSFET 190V Vds 16V Vgs PowerPAK SC-75
      SIB452DK-T1-GE3-CUT TAPE

      Mfr.#: SIB452DK-T1-GE3-CUT TAPE

      OMO.#: OMO-SIB452DK-T1-GE3-CUT-TAPE-1190

      		 Nuovo e originale
      SIB452D

      Mfr.#: SIB452D

      OMO.#: OMO-SIB452D-1190

      		 Nuovo e originale
      SIB452DK

      Mfr.#: SIB452DK

      OMO.#: OMO-SIB452DK-1190

      		 Nuovo e originale
      SIB452DK-T1-GE3

      Mfr.#: SIB452DK-T1-GE3

      OMO.#: OMO-SIB452DK-T1-GE3-VISHAY

      		 MOSFET N-CH 190V 1.5A SC75-6
      Disponibilità
      Azione:
      Available
      Su ordine:
      5500
      Inserisci la quantità:
      Il prezzo attuale di SIB452DK-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,36 USD
      0,36 USD
      10
      0,34 USD
      3,38 USD
      100
      0,32 USD
      31,98 USD
      500
      0,30 USD
      151,00 USD
      1000
      0,28 USD
      284,30 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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