SI2301BDS-T1-GE3

Mfr. #:: SI2301BDS-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET P-CH 20V 2.2A SOT23-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI2301BDS-T1-GE3 Scheda dati
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Maggiori informazioni:: SI2301BDS-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: FET - Single

Confezione: Bobina

Alias parziali: SI2301BDS-GE3

Unità di peso: 0.050717 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SOT-23-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 P-Channel

Pd-Power-Dissipazione: 700 mW

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 40 ns

Ora di alzarsi: 40 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuo-Scarico-Corrente: 2.2 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Rds-On-Drain-Source-Resistenza: 100 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 30 ns

Tempo di ritardo all'accensione tipico: 20 ns

Modalità canale: Aumento

Tags: SI2301BDS-T1, SI2301BDS-T, SI2301BD, SI2301B, SI2301, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2301BDS-T1-GE3 Descrizione

***ical: Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R

***et Europe: Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R

***i-Key: MOSFET P-CH 20V 2.2A SOT23-3

***ure Electronics: P-CHANNEL 2.5-V (G-S) MOSFET

***nell: P CHANNEL MOSFET

***ark: P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW ;RoHS Compliant: Yes

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW

SI2301BDS-T1-GE3 Maggiori informazioni

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI2301BDS-T1-GE3 DISTI # V72:2272_09216783	Vishay Intertechnologies	Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R RoHS: Compliant	2495	1000:$0.1492 500:$0.1928 250:$0.2120 100:$0.2356 25:$0.2847 10:$0.3164 1:$0.4180
SI2301BDS-T1-GE3 DISTI # SI2301BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 2.2A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4759In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI2301BDS-T1-GE3 DISTI # SI2301BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 2.2A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4759In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI2301BDS-T1-GE3 DISTI # SI2301BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 2.2A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.1875
SI2301BDS-T1-GE3 DISTI # 28976274	Vishay Intertechnologies	Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R RoHS: Compliant	2495	1000:$0.1492 500:$0.1928 250:$0.2120 100:$0.2356 57:$0.2847
SI2301BDS-T1-GE3 DISTI # 84R8020	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Power Dissipation Pd:700mW, RoHS Compliant: Yes	0	1:$0.4400 25:$0.3330 50:$0.2910 100:$0.2480 250:$0.2260 500:$0.2030 1000:$0.1570
SI2301BDS-T1-GE3 DISTI # 33P5162	Vishay Intertechnologies	P CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Product Range:-, RoHS Compliant: Yes	0	1:$0.1630 3000:$0.1620 6000:$0.1540 12000:$0.1370
SI2301BDS-T1-GE3 DISTI # 781-SI2301BDS-GE3	Vishay Intertechnologies	MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V RoHS: Compliant	10356	1:$0.4400 10:$0.3330 100:$0.2480 500:$0.2030 1000:$0.1570 3000:$0.1430 6000:$0.1340 9000:$0.1250
SI2301BDS-T1-GE3 DISTI # 1867173	Vishay Intertechnologies	P CH MOSFET RoHS: Compliant	0	3000:£0.1390
SI2301BDS-T1-GE3 DISTI # C1S803601819123	Vishay Intertechnologies	Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R RoHS: Compliant	2495	250:$0.2120 100:$0.2356 25:$0.2847 10:$0.3164

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI2301BDS-T1-E3 OMO.#: OMO-SI2301BDS-T1-E3	MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
	Mfr.#: SI2301BDS OMO.#: OMO-SI2301BDS-1190	P CHANNEL MOSFET, FULL REEL
	Mfr.#: SI2301BDS-T-E3 OMO.#: OMO-SI2301BDS-T-E3-1190	Nuovo e originale
	Mfr.#: SI2301BDS-T1-E3 , MAX630 OMO.#: OMO-SI2301BDS-T1-E3-MAX630-1190	Nuovo e originale
	Mfr.#: SI2301BDS-T1-ES OMO.#: OMO-SI2301BDS-T1-ES-1190	Nuovo e originale
	Mfr.#: SI2301BDS-T1-GE3 , MAX63 OMO.#: OMO-SI2301BDS-T1-GE3-MAX63-1190	Nuovo e originale
	Mfr.#: SI2301BDS-TI OMO.#: OMO-SI2301BDS-TI-1190	Nuovo e originale
	Mfr.#: SI2301BDS-TI-E3 OMO.#: OMO-SI2301BDS-TI-E3-1190	Nuovo e originale
	Mfr.#: SI2301BDS-T1-E3-CUT TAPE OMO.#: OMO-SI2301BDS-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI2301BDS-T1-GE3 OMO.#: OMO-SI2301BDS-T1-GE3-VISHAY	MOSFET P-CH 20V 2.2A SOT23-3

Disponibilità

Azione:: Available
Su ordine:: 3000
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Il prezzo attuale di SI2301BDS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,14 USD~~; ~~0,14 USD~~

10: ~~0,13 USD~~; ~~1,31 USD~~

100: ~~0,12 USD~~; ~~12,41 USD~~

500: ~~0,12 USD~~; ~~58,60 USD~~

1000: ~~0,11 USD~~; ~~110,30 USD~~

Iniziare con

SI2301BDS-T1 7
SI2301BDS-T 10
SI2301BD 12
SI2301B 13
SI2301 84
SI230 331
SI23 561
SI2 1125

SI2301BDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes