We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPI034NE7N3 G DISTI # IPI034NE7N3G-ND | Infineon Technologies AG | MOSFET N-CH 75V 100A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPI034NE7N3GAKSA1 DISTI # IPI034NE7N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 75V 100A 3-Pin 3TO-262 Tube - Bulk (Alt: IPI034NE7N3GAKSA1) RoHS: Compliant Min Qty: 25000 Container: Bulk | Americas - 0 |
|
| IPI034NE7N3 G DISTI # 726-IPI034NE7N3G | Infineon Technologies AG | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 RoHS: Compliant | 0 | |
| IPI034NE7N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 498 |
|
| IPI034NE7N3G | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 7459 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPI032N06N3GAKSA1 OMO.#: OMO-IPI032N06N3GAKSA1 |
MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI030N10N3G 030N10N |
Nuovo e originale |
|
Mfr.#: IPI030N10N3GHKSA1 |
MOSFET N-CH 100V 100A TO262-3 |
|
|
Mfr.#: IPI032N06N3 G |
MOSFET N-CH 60V 120A TO262-3 |
|
|
Mfr.#: IPI033NE7N G OMO.#: OMO-IPI033NE7N-G-1190 |
Nuovo e originale |
|
|
Mfr.#: IPI033NE7N3G OMO.#: OMO-IPI033NE7N3G-1190 |
Nuovo e originale |
|
|
Mfr.#: IPI034NE7N3G OMO.#: OMO-IPI034NE7N3G-1190 |
Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: IPI034NE7N3G(034NE7N) |
Nuovo e originale |
|
|
Mfr.#: IPI037N06L3G OMO.#: OMO-IPI037N06L3G-1190 |
Nuovo e originale |
|
|
Mfr.#: IPI030N10N3GXKSA1 |
RF Bipolar Transistors MOSFET N-Ch 100V 100A I2PAK-3 |