IXYN82N120C3

IXYN82N120C3
Mfr. #:
IXYN82N120C3
Produttore:
Littelfuse
Descrizione:
IGBT Transistors 1200V XPT IGBT GenX3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYN82N120C3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN82N120C3 DatasheetIXYN82N120C3 Datasheet (P4-P6)
ECAD Model:
Maggiori informazioni:
IXYN82N120C3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
SOT-227B-4
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.75 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
120 A
Pd - Dissipazione di potenza:
600 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
IXYN82N120
Confezione:
Tubo
Corrente continua del collettore Ic Max:
120 A
Marca:
IXYS
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Nome depositato:
XPT
Unità di peso:
1.058219 oz
Tags
IXYN8, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXYN82N120C3H1
DISTI # 23829664
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 105A 4-Pin SOT-227B
RoHS: Compliant
220
  • 10:$29.5733
IXYN82N120C3H1
DISTI # IXYN82N120C3H1-ND
IXYS CorporationIGBT MODULE 1200V 105A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube
136In Stock
  • 250:$27.5500
  • 100:$30.0200
  • 30:$32.3000
  • 10:$35.1500
  • 1:$38.0000
IXYN82N120C3
DISTI # IXYN82N120C3-ND
IXYS CorporationIGBT XPT 1200V 105A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$29.5260
IXYN82N120C3
DISTI # 747-IXYN82N120C3
IXYS CorporationIGBT Transistors 1200V XPT IGBT GenX3
RoHS: Compliant
6
  • 1:$30.4000
  • 5:$28.8800
  • 10:$28.1200
  • 25:$25.8400
  • 50:$25.2200
  • 100:$24.0200
  • 200:$22.0400
IXYN82N120C3H1
DISTI # 747-IXYN82N120C3H1
IXYS CorporationIGBT Transistors XPT IGBT C3-Class 1200V/105A,Copack
RoHS: Compliant
37
  • 1:$38.0000
  • 5:$36.1000
  • 10:$35.1500
  • 25:$32.3000
  • 50:$31.5200
  • 100:$30.0200
  • 200:$27.5500
IXYN82N120C3H1IXYS CorporationGenX3 XPT IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
RoHS: Compliant
370Tube
  • 1:$28.1600
  • 2:$26.7700
  • 5:$25.0200
  • 10:$23.7800
  • 25:$21.1200
IXYN82N120C3
DISTI # 8047628
IXYS CorporationIGBT N-CH 1200V 66A XPT SOT227B, EA8
  • 1:£24.2000
  • 5:£21.7800
  • 10:£20.8100
  • 25:£20.0900
IXYN82N120C3H1
DISTI # 8047622
IXYS CorporationIGBT 1200V 105A XPT GENX3 DIODE SOT227B, EA3
  • 1:£27.4900
  • 2:£27.3600
  • 5:£27.2200
  • 10:£24.4600
  • 30:£23.3600
IXYN82N120C3H1
DISTI # 2674802
IXYS CorporationIGBT, N-CH, 1.2KV, 105A, SOT-227B
RoHS: Compliant
0
  • 1:£28.7500
  • 5:£27.3100
  • 10:£24.4400
  • 50:£23.8400
  • 100:£20.8400
IXYN82N120C3H1
DISTI # XSFT00000023520
IXYS CorporationGENX3 XPT IGBT 1200 V 105 A CHASSIS MOUNTHIGH-SPEED IGBT - SOT-227B
RoHS: Compliant
280
  • 10:$35.6400
Immagine Parte # Descrizione
DSEP2x61-12A

Mfr.#: DSEP2x61-12A

OMO.#: OMO-DSEP2X61-12A

Rectifiers 120 Amps 1200V
IXTH6N120

Mfr.#: IXTH6N120

OMO.#: OMO-IXTH6N120

MOSFET 6 Amps 1200V 2.700 Rds
DSEP2X61-12A

Mfr.#: DSEP2X61-12A

OMO.#: OMO-DSEP2X61-12A-IXYS-CORPORATION

Rectifiers 120 Amps 1200V
IXTH6N120

Mfr.#: IXTH6N120

OMO.#: OMO-IXTH6N120-IXYS-CORPORATION

IGBT Transistors MOSFET 6 Amps 1200V 2.700 Rds
Disponibilità
Azione:
Available
Su ordine:
1989
Inserisci la quantità:
Il prezzo attuale di IXYN82N120C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
30,40 USD
30,40 USD
5
28,88 USD
144,40 USD
10
28,12 USD
281,20 USD
25
25,84 USD
646,00 USD
50
25,22 USD
1 261,00 USD
100
24,02 USD
2 402,00 USD
200
22,04 USD
4 408,00 USD
500
20,98 USD
10 490,00 USD
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