BSZ150N10LS3GATMA1

BSZ150N10LS3GATMA1
Mfr. #:
BSZ150N10LS3GATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 100V 40A TSDSON-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ150N10LS3GATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSZ150N10LS3GATMA1 DatasheetBSZ150N10LS3GATMA1 Datasheet (P4-P6)BSZ150N10LS3GATMA1 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSDSON-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
40 A
Rds On - Resistenza Drain-Source:
13 mOhms
Vgs th - Tensione di soglia gate-source:
1.1 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
35 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
63 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
3.3 mm
Serie:
OptiMOS 3
Tipo di transistor:
1 N-Channel
Larghezza:
3.3 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
21 S
Tempo di caduta:
3.9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
4.6 ns
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
23.4 ns
Tempo di ritardo di accensione tipico:
8.1 ns
Parte # Alias:
BSZ150N10LS3 G SP001002916
Tags
BSZ150, BSZ15, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 15 mOhm 26 nC OptiMOS™ Power Mosfet - TSDSON-8
***et Europe
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON T/R
***ical
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON
***ponent Sense
N-FET BSZ150N10LS3 PWR TSDSON8
***i-Key
MOSFET N-CH 100V 40A 8TSDSON
***p One Stop Global
OPTIMOSTM3 POWER-TRANSISTOR
***ronik
N-CH 100V 40A 15mOhm S3O8
***ark
Mosfet, N-Ch, 100V, 40A, Pg-Tsdson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 40A, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:63W; Transistor Case Style:PG-TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 100V, 40A, PG-TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:63W; Modello Case Transistor:PG-TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descrizione Azione Prezzo
BSZ150N10LS3GATMA1
DISTI # V72:2272_06384625
Infineon Technologies AGTrans MOSFET N-CH 100V 8A Automotive 8-Pin TSDSON T/R
RoHS: Compliant
1838
  • 1000:$0.6260
  • 500:$0.7556
  • 250:$0.8321
  • 100:$0.8613
  • 25:$1.0792
  • 10:$1.1120
  • 1:$1.2852
BSZ150N10LS3GATMA1
DISTI # BSZ150N10LS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 40A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.6407
BSZ150N10LS3GATMA1
DISTI # BSZ150N10LS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 40A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.7442
  • 500:$0.9427
  • 100:$1.2156
  • 10:$1.5380
  • 1:$1.7400
BSZ150N10LS3GATMA1
DISTI # BSZ150N10LS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 40A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.7442
  • 500:$0.9427
  • 100:$1.2156
  • 10:$1.5380
  • 1:$1.7400
BSZ150N10LS3GATMA1
DISTI # 30695017
Infineon Technologies AGTrans MOSFET N-CH 100V 8A Automotive 8-Pin TSDSON T/R
RoHS: Compliant
1838
  • 1000:$0.6260
  • 500:$0.7556
  • 250:$0.8321
  • 100:$0.8613
  • 25:$1.0792
  • 12:$1.1120
BSZ150N10LS3GATMA1
DISTI # BSZ150N10LS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 8A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ150N10LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.6299
  • 10000:$0.6079
  • 20000:$0.5859
  • 30000:$0.5659
  • 50000:$0.5559
BSZ150N10LS3GATMA1
DISTI # SP001002916
Infineon Technologies AGTrans MOSFET N-CH 100V 8A 8-Pin TSDSON T/R (Alt: SP001002916)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€0.7939
  • 10000:€0.6489
  • 20000:€0.5949
  • 30000:€0.5489
  • 50000:€0.5099
BSZ150N10LS3GATMA1
DISTI # BSZ150N10LS3 G
Infineon Technologies AGTrans MOSFET N-CH 100V 8A 8-Pin TSDSON T/R (Alt: BSZ150N10LS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
  • 5000:$0.6256
  • 10000:$0.6082
  • 15000:$0.5918
  • 25000:$0.5762
  • 50000:$0.5687
  • 125000:$0.5614
  • 250000:$0.5543
BSZ150N10LS3GATMA1
DISTI # 97Y1271
Infineon Technologies AGMOSFET, N-CH, 100V, 40A, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes236
  • 1:$1.4400
  • 10:$1.2300
  • 25:$1.1300
  • 50:$1.0400
  • 100:$0.9420
  • 250:$0.8880
  • 500:$0.8330
  • 1000:$0.6570
BSZ150N10LS3 G
DISTI # 726-BSZ150N10LS3G
Infineon Technologies AGMOSFET N-Ch 100V 40A TSDSON-8
RoHS: Compliant
5000
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9420
  • 500:$0.8330
  • 1000:$0.6570
  • 5000:$0.5830
BSZ150N10LS3GATMA1
DISTI # 726-BSZ150N10LS3GATM
Infineon Technologies AGMOSFET N-Ch 100V 40A TSDSON-8
RoHS: Compliant
0
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9420
  • 500:$0.8330
  • 1000:$0.6570
  • 5000:$0.5830
BSZ150N10LS3GATMA1Infineon Technologies AGSingle N-Channel 100 V 15 mOhm 26 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant
50Cut Tape/Mini-Reel
  • 1:$0.8000
  • 100:$0.6950
  • 250:$0.6750
  • 500:$0.6600
  • 1500:$0.6150
BSZ150N10LS3GATMA1
DISTI # 2617423
Infineon Technologies AGMOSFET, N-CH, 100V, 40A, PG-TSDSON-8
RoHS: Compliant
236
  • 1:$2.7800
  • 10:$2.4600
  • 100:$1.9400
  • 500:$1.5100
  • 1000:$1.1900
BSZ150N10LS3GATMA1
DISTI # 2617423
Infineon Technologies AGMOSFET, N-CH, 100V, 40A, PG-TSDSON-8
RoHS: Compliant
511
  • 5:£1.3100
  • 25:£1.1900
  • 100:£0.9170
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Gate Drivers 0.5A Sngl MOSFET Drvr
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Mfr.#: P9242-RNDGI8

OMO.#: OMO-P9242-RNDGI8

Wireless Charging ICs WPC 1.2.2 Wireless Transmitter 15W
C5750X7S2A106M230KE

Mfr.#: C5750X7S2A106M230KE

OMO.#: OMO-C5750X7S2A106M230KE

Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 2220 100V 10uF X7S 20% T:2.3mm
CC0603KRX7R9BB103

Mfr.#: CC0603KRX7R9BB103

OMO.#: OMO-CC0603KRX7R9BB103

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10nF 50V X7R 10%
CC0603KRX7R9BB104

Mfr.#: CC0603KRX7R9BB104

OMO.#: OMO-CC0603KRX7R9BB104

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Mfr.#: ESP32-WROOM-32D

OMO.#: OMO-ESP32-WROOM-32D

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MCP1402T-E/OT

Mfr.#: MCP1402T-E/OT

OMO.#: OMO-MCP1402T-E-OT-MICROCHIP-TECHNOLOGY

Gate Drivers 0.5A Sngl MOSFET Drv
P9242-RNDGI8

Mfr.#: P9242-RNDGI8

OMO.#: OMO-P9242-RNDGI8-INTEGRATED-DEVICE-TECH

IC TRANSMITTER 48VFQFPN
ABM10-166-12.000MHZ-T3

Mfr.#: ABM10-166-12.000MHZ-T3

OMO.#: OMO-ABM10-166-12-000MHZ-T3-ABRACON

CRYSTAL 12.00MHZ 8PF LOW ESR SMD
105133-0011

Mfr.#: 105133-0011

OMO.#: OMO-105133-0011-393

Conn Micro USB Type B RCP 5 POS 0.65mm Solder ST SMD 5 Terminal 1 Port Embossed T/R - Tape and Reel (Alt: 1051330011)
Disponibilità
Azione:
Available
Su ordine:
1992
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Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,43 USD
1,43 USD
10
1,22 USD
12,20 USD
100
0,94 USD
94,20 USD
500
0,83 USD
416,50 USD
1000
0,66 USD
657,00 USD
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