IGO60R070D1AUMA1

IGO60R070D1AUMA1
Mfr. #:
IGO60R070D1AUMA1
Produttore:
Infineon Technologies
Descrizione:
IC GAN FET 600V 60A 20DSO
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IGO60R070D1AUMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IGO60R070D1AUMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
Parte # Mfg. Descrizione Azione Prezzo
IGO60R070D1AUMA1
DISTI # V72:2272_22710690
Infineon Technologies AGIGO60R070D1AUMA10
    IGO60R070D1AUMA1
    DISTI # V36:1790_22710690
    Infineon Technologies AGIGO60R070D1AUMA10
    • 400000:$13.6900
    • 80000:$14.6300
    • 8000:$16.6600
    • 800:$17.0200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1CT-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1DKR-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1TR-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 800:$17.0240
    IGO60R070D1AUMA1
    DISTI # SP001300362
    Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R (Alt: SP001300362)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 100
    • 8000:€13.6900
    • 4800:€14.2900
    • 3200:€15.0900
    • 1600:€15.2900
    • 800:€15.6900
    IGO60R070D1AUMA1/SAMPLE
    DISTI # IGO60R070D1AUMA1/SAMPLE
    Infineon Technologies AGTransistor MOSFET Enhancement Mode 600V 20-Pin DSO - Trays (Alt: IGO60R070D1AUMA1/SAMPLE)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray
    Americas - 5
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1
      Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGO60R070D1AUMA1)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel
      Americas - 0
      • 8000:$14.8900
      • 4800:$15.0900
      • 3200:$15.6900
      • 1600:$16.2900
      • 800:$16.8900
      IGO60R070D1AUMA1
      DISTI # 84AC1770
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes974
      • 500:$16.3800
      • 250:$17.2100
      • 100:$18.0400
      • 50:$19.1100
      • 25:$20.1800
      • 10:$21.1300
      • 1:$22.9100
      IGO60R070D1AUMA1
      DISTI # 726-IGO60R070D1AUMA1
      Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
      RoHS: Compliant
      0
      • 1:$22.6800
      • 5:$22.4400
      • 10:$20.9200
      • 25:$19.9800
      • 100:$17.8600
      • 250:$17.0400
      • 500:$16.2200
      • 800:$14.1000
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1
      Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W5
      • 10:$22.5500
      • 3:$25.5900
      • 1:$28.4100
      IGO60R070D1AUMA1
      DISTI # 2981531
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
      RoHS: Compliant
      974
      • 800:$23.5100
      • 500:$26.0500
      • 100:$26.9300
      • 50:$29.3700
      • 1:$32.3000
      • 10:$32.3000
      IGO60R070D1AUMA1
      DISTI # 2981531
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W954
      • 100:£13.0800
      • 50:£13.8600
      • 10:£14.6300
      • 5:£16.4300
      • 1:£16.6000
      Immagine Parte # Descrizione
      IGO60R070D1AUMA1

      Mfr.#: IGO60R070D1AUMA1

      OMO.#: OMO-IGO60R070D1AUMA1

      MOSFET 600V CoolGaN Power Transistor
      IGO60R070D1AUMA1

      Mfr.#: IGO60R070D1AUMA1

      OMO.#: OMO-IGO60R070D1AUMA1-INFINEON-TECHNOLOGIES

      IC GAN FET 600V 60A 20DSO
      Disponibilità
      Azione:
      Available
      Su ordine:
      5500
      Inserisci la quantità:
      Il prezzo attuale di IGO60R070D1AUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      20,54 USD
      20,54 USD
      10
      19,51 USD
      195,08 USD
      100
      18,48 USD
      1 848,15 USD
      500
      17,45 USD
      8 727,40 USD
      1000
      16,43 USD
      16 428,00 USD
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