RN2906,LF(CT

Mfr. #:: RN2906,LF(CT
Produttore:: Toshiba
Descrizione:: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: RN2906,LF(CT Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Toshiba

Categoria di prodotto:: Transistor bipolari - Pre-polarizzati

RoHS:: Y

Polarità del transistor:: PNP

Resistenza di ingresso tipica:: 4.7 kOhms

Rapporto resistore tipico:: 0.1

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-363-6

Guadagno base/collettore DC hfe min:: 80

Tensione collettore-emettitore VCEO Max:: - 50 V

Corrente continua del collettore:: - 100 mA

Pd - Dissipazione di potenza:: 200 mW

Serie:: RN2906

Confezione:: Bobina

Emettitore-tensione di base VEBO:: - 10 V

Marca:: Toshiba

Tipologia di prodotto:: BJT - Transistor bipolari - Prepolarizzati

Quantità confezione di fabbrica:: 3000

sottocategoria:: transistor

Unità di peso:: 0.000212 oz

Tags: RN2906, RN290, RN29, RN2

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN2906,LF(CT Descrizione

***i-Key: TRANS PREBIAS 2PNP 50V 0.2W US6

***: US6-PLN ACTIVE

***et Europe: Trans Digital BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R

***el Electronic: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

***i-Key: TRANS NPN/PNP PREBIAS 0.2W US6

***i-Key: TRANS NPN/PNP PREBIAS 0.2W US6

***S: French Electronic Distributor since 1988

***ure Electronics: UMB10N Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-88

***p One Stop Global: Trans Digital BJT PNP 50V 100mA 6-Pin UMT T/R

***ment14 APAC: Transistor DUAL UM6 PNP/PNP; Digital Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;

***ark: TRANSISTOR DUAL UM6 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; Min Hfe:80; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMB10N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***p One Stop Global: Trans Digital BJT PNP 50V 100mA 200mW Automotive 6-Pin SOT-363 T/R

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

***ure Electronics: DDA Series 50 V 100 mA Dual PNP Pre-Biased Small Signal Transistor - SOT-363

***ark: Transistor, Npn/Pnp, 50V, 0.1A, Sot363 Rohs Compliant: Yes |Diodes Inc. DCX114EU-7-F

***nsix Microsemi: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: DCX114EU Series 50 V 100 mA NPN/PNP Surface Mount Dual Transistor - SOT-363-6

***ical: Trans Digital BJT NPN/PNP 50V 100mA 200mW 6-Pin SOT-363 T/R

***ment14 APAC: Transistor, NPN/PNP, 50V, 0.1A, SOT363;

***eco: Transistor General Purpose BJT NPN/PNP 40 Volt 0.2A 6-Pin SOT-363

***ure Electronics: MMDT3946 Series NPN/PNP 40 V 200 mW Small Signal Transistor SMT - SOT-363

***icontronic: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ical: Trans GP BJT NPN/PNP 40V 0.2A 200mW 6-Pin SOT-363 T/R

***(Formerly Allied Electronics): Transistor NPN/PNP 40V 0.2A SOT363-6 | Diodes Inc MMDT3946-7-F

***nell: TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 200mW; DC Collector Current: -200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
RN2906,LF DISTI # RN2906LFCT-ND	Toshiba America Electronic Components	TRANS 2PNP PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5875In Stock	1000:$0.0579 500:$0.0852 250:$0.0999 100:$0.1590 25:$0.2044 10:$0.2840 1:$0.3100
RN2906,LF(CT DISTI # 757-RN2906LF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor RoHS: Compliant	0	1:$0.4200 10:$0.2310 100:$0.0990 1000:$0.0760 3000:$0.0580 9000:$0.0520 24000:$0.0480 45000:$0.0430 99000:$0.0410

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: RN2906,LF OMO.#: OMO-RN2906-LF	Bipolar Transistors - Pre-Biased US6-PLN
	Mfr.#: RN2906,LF(CT OMO.#: OMO-RN2906-LF-CT-123	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
	Mfr.#: RN2906,LF OMO.#: OMO-RN2906-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - Pre-Biased US6-PLN
	Mfr.#: RN2906FE OMO.#: OMO-RN2906FE-1190	Nuovo e originale
	Mfr.#: RN2906(T5LFT)TR-ND OMO.#: OMO-RN2906-T5LFT-TR-ND-1190	Nuovo e originale
	Mfr.#: RN2906FE(TE85LF)DKR-ND OMO.#: OMO-RN2906FE-TE85LF-DKR-ND-1190	Nuovo e originale
	Mfr.#: RN2906FE(TE85LF)TR-ND OMO.#: OMO-RN2906FE-TE85LF-TR-ND-1190	Nuovo e originale
	Mfr.#: RN2906LFCT-ND OMO.#: OMO-RN2906LFCT-ND-1190	Nuovo e originale
	Mfr.#: RN2906LFTR-ND OMO.#: OMO-RN2906LFTR-ND-1190	Nuovo e originale
	Mfr.#: RN2906 OMO.#: OMO-RN2906-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 4000
Inserisci la quantità:

Il prezzo attuale di RN2906,LF(CT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,42 USD~~; ~~0,42 USD~~

10: ~~0,23 USD~~; ~~2,31 USD~~

100: ~~0,10 USD~~; ~~9,90 USD~~

1000: ~~0,08 USD~~; ~~76,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

RN2906 14
RN290 160
RN29 297
RN2 1511

RN2906,LF(CT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes