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SI4288DY-T1-GE3

Mfr. #:: SI4288DY-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 40V Vds 20V Vgs SO-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI4288DY-T1-GE3 Scheda dati
ECAD Model:

Disponibilità

Azione:: Available
Su ordine:: 1988
Inserisci la quantità:

Il prezzo attuale di SI4288DY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,39 USD~~; ~~1,39 USD~~

10: ~~1,15 USD~~; ~~11,50 USD~~

100: ~~0,88 USD~~; ~~88,30 USD~~

500: ~~0,76 USD~~; ~~380,00 USD~~

1000: ~~0,60 USD~~; ~~599,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Numero di canali:: 2 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 40 V

Id - Corrente di scarico continua:: 9.2 A

Rds On - Resistenza Drain-Source:: 20 mOhms

Vgs th - Tensione di soglia gate-source:: 1.2 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: 10 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 3.1 W

Configurazione:: Dual

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI4

Tipo di transistor:: 2 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 35 S

Tempo di caduta:: 8 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 9 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 16 ns

Tempo di ritardo di accensione tipico:: 7 ns

Parte # Alias:: SI4288DY-GE3

Unità di peso:: 0.017870 oz

Tags: SI4288, SI428, SI42, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4288DY-T1-GE3 Descrizione

***et Japan: Transistor MOSFET Array Dual N-CH 40V 9.2A 8-Pin SOIC T/R

***ical: Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:9.2A; On Resistance Rds(On):0.0165Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V Rohs Compliant: Yes

***nell: MOSFET, NN CH, W/D, 40V, 9.2A, SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.0165ohm; Power Dissipation Pd:3.1W

SI4288DY-T1-GE3 Maggiori informazioni

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI4288DY-T1-GE3 DISTI # V72:2272_09215547	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R RoHS: Compliant	117	100:$0.8787 25:$1.0268 10:$1.1409 1:$1.5129
SI4288DY-T1-GE3 DISTI # V36:1790_09215547	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.5454 1250000:$0.5456 250000:$0.5602 25000:$0.5841 2500:$0.5880
SI4288DY-T1-GE3 DISTI # SI4288DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 40V 9.2A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20634In Stock	1000:$0.6489 500:$0.8219 100:$0.9950 10:$1.2760 1:$1.4300
SI4288DY-T1-GE3 DISTI # SI4288DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 9.2A 8SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20634In Stock	1000:$0.6489 500:$0.8219 100:$0.9950 10:$1.2760 1:$1.4300
SI4288DY-T1-GE3 DISTI # SI4288DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 9.2A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	17500In Stock	12500:$0.5376 5000:$0.5586 2500:$0.5880
SI4288DY-T1-GE3 DISTI # 32655952	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R RoHS: Compliant	5000	2500:$0.5569
SI4288DY-T1-GE3 DISTI # 30667634	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R RoHS: Compliant	117	12:$1.5129
SI4288DY-T1-GE3 DISTI # SI4288DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: SI4288DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 5000	25000:€0.4979 15000:€0.5209 10000:€0.5889 5000:€0.7259 2500:€1.0129
SI4288DY-T1-GE3 DISTI # SI4288DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: SI4288DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4288DY-T1-GE3 DISTI # SI4288DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4288DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.5128 15000:$0.5270 10000:$0.5420 5000:$0.5650 2500:$0.5822
SI4288DY-T1-GE3 DISTI # 70AC6505	Vishay Intertechnologies	Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 70AC6505) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	500:$0.9510 250:$1.0300 100:$1.1100 50:$1.2200 25:$1.3400 10:$1.4500 1:$1.7500
SI4288DY-T1-GE3 DISTI # 65T1693	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V	0	10000:$0.5080 6000:$0.5200 4000:$0.5400 2000:$0.6000 1000:$0.6600 1:$0.6880
SI4288DY-T1-GE3 DISTI # 70AC6505	Vishay Intertechnologies	MOSFET, DUAL N-CH, 40V, 9.2A, 150DEG C,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.2A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	2487	500:$0.6160 50:$0.6670 100:$0.6670 250:$0.6670 1:$0.7280 10:$0.7280 25:$0.7280
SI4288DY-T1-GE3. DISTI # 30AC0152	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.2A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:3.1W,Product Range:-RoHS Compliant: Yes	0	10000:$0.5080 6000:$0.5200 4000:$0.5400 2000:$0.6000 1000:$0.6600 1:$0.6880
SI4288DY-T1-GE3 DISTI # 70459532	Vishay Siliconix	40 Volts 9.2 Amps 3.1 Watts RoHS: Compliant	0	2500:$0.8500 5000:$0.8050
SI4288DY-T1-GE3 DISTI # 78-SI4288DY-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs SO-8 RoHS: Compliant	155	1:$1.3900 10:$1.1500 100:$0.8830 500:$0.7600 1000:$0.5990 2500:$0.5590 5000:$0.5310 10000:$0.5120
SI4288DY-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 22500
SI4288DY-T1-GE3 DISTI # 2056718	Vishay Intertechnologies	MOSFET, NN CH, W/D, 40V, 9.2A, SO8	2267	500:£0.5870 250:£0.6340 100:£0.6810 10:£0.9380 1:£1.2200
SI4288DY-T1-GE3 DISTI # XSKDRABV0045272	Vishay Intertechnologies	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.6960 2500:$0.7457
SI4288DY-T1-GE3 DISTI # 2056718	Vishay Intertechnologies	MOSFET, NN CH, W/D, 40V, 9.2A, SO8 RoHS: Compliant	1290	2500:$1.1300 500:$1.1500 100:$1.3300 10:$1.7300 1:$2.0900
SI4288DY-T1-GE3 DISTI # 2056718RL	Vishay Intertechnologies	MOSFET, NN CH, W/D, 40V, 9.2A, SO8 RoHS: Compliant	0	2500:$1.1300 500:$1.1500 100:$1.3300 10:$1.7300 1:$2.0900

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