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SI8489EDB-T2-E1

SI8489EDB-T2-E1
Mfr. #:
SI8489EDB-T2-E1
Produttore:
Vishay
Descrizione:
IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI8489EDB-T2-E1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI8489EDB-T2-E1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Stile di montaggio
SMD/SMT
Nome depositato
MICROFOOT TrenchFET
Pacchetto-Custodia
4-UFBGA
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
4-Microfoot
Configurazione
Separare
Tipo FET
MOSFET Canale P, ossido di metallo
Potenza-Max
780mW
Tipo a transistor
1 P-Channel
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
765pF @ 10V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
-
Rds-On-Max-Id-Vgs
44 mOhm @ 1.5A, 10V
Vgs-th-Max-Id
1.2V @ 250μA
Gate-Carica-Qg-Vgs
27nC @ 10V
Pd-Power-Dissipazione
900 mW
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
25 ns
Ora di alzarsi
20 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuo-Scarico-Corrente
- 700 mA
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
- 0.5 V to - 1.2 V
Rds-On-Drain-Source-Resistenza
44 mOhms
Polarità del transistor
Canale P
Tempo di ritardo allo spegnimento tipico
50 ns
Tempo di ritardo all'accensione tipico
27 ns
Qg-Gate-Carica
9.5 nC
Transconduttanza diretta-Min
10 S
Tags
SI848, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT
***et
Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
***ronik
P-CH 20V 5,4A 36mOhm MICROFOOT
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descrizione Azione Prezzo
SI8489EDB-T2-E1
DISTI # V72:2272_09216538		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant		4770
  • 3000:$0.1492
  • 1000:$0.1535
  • 500:$0.1906
  • 250:$0.2240
  • 100:$0.2266
  • 25:$0.2848
  • 10:$0.2883
  • 1:$0.3521
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1TR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1749
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1CT-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1976
  • 500:$0.2557
  • 100:$0.3487
  • 10:$0.4650
  • 1:$0.5500
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1DKR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1976
  • 500:$0.2557
  • 100:$0.3487
  • 10:$0.4650
  • 1:$0.5500
SI8489EDB-T2-E1
DISTI # 30195830		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant		4770
  • 3000:$0.1492
  • 1000:$0.1535
  • 500:$0.1906
  • 250:$0.2240
  • 100:$0.2266
  • 49:$0.2848
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8489EDB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1489
  • 6000:$0.1439
  • 12000:$0.1389
  • 18000:$0.1349
  • 30000:$0.1309
SI8489EDB-T2-E1
DISTI # 70617010		Vishay SiliconixSI8489EDB-T2-E1 P-channel MOSFET Transistor,4.3 A,20 V,4-Pin MICRO FOOT
RoHS: Compliant		0
  • 300:$0.2900
  • 600:$0.2600
  • 1500:$0.2300
  • 3000:$0.2100
SI8489EDB-T2-E1
DISTI # 78-SI8489EDB-T2-E1		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
RoHS: Compliant		12622
  • 1:$0.4900
  • 10:$0.3710
  • 100:$0.2750
  • 500:$0.2260
  • 1000:$0.1750
  • 3000:$0.1710
SI8489EDB-T2-E1
DISTI # 8181438P		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 5.4A, RL2940
  • 60:£0.2550
  • 200:£0.2440
  • 400:£0.2220
  • 800:£0.2010
SI8489EDB-T2-E1
DISTI # C1S803604064229		Vishay IntertechnologiesMOSFETs4770
  • 250:$0.2240
  • 100:$0.2266
  • 25:$0.2848
  • 10:$0.2883
SI8489EDB-T2-E1Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
RoHS: Compliant		Americas - 6000
    Immagine Parte # Descrizione
    SI8489EDB-T2-E1

    Mfr.#: SI8489EDB-T2-E1

    OMO.#: OMO-SI8489EDB-T2-E1

    		 MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
    SI8489EDB-T2-E1

    Mfr.#: SI8489EDB-T2-E1

    OMO.#: OMO-SI8489EDB-T2-E1-VISHAY

    		 IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
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    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
    0,20 USD
    0,20 USD
    10
    0,19 USD
    1,86 USD
    100
    0,18 USD
    17,67 USD
    500
    0,17 USD
    83,45 USD
    1000
    0,16 USD
    157,10 USD
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