FCP7N60

FCP7N60
Mfr. #:
FCP7N60
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-Channel SuperFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCP7N60 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
7 A
Rds On - Resistenza Drain-Source:
530 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
83 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
SuperFET
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCP7N60
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
6 S
Tempo di caduta:
32 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
55 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
75 ns
Tempo di ritardo di accensione tipico:
35 ns
Unità di peso:
0.063493 oz
Tags
FCP7, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220
***Components
In a Pack of 5, N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220AB Fairchild FCP7N60
***p One Stop Japan
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube
***i-Key
MOSFET N-CH 600V 7A TO-220
***ser
MOSFETs 600V N-Channel SuperFET
***inecomponents.com
600V N-Channel SuperFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:7A; On Resistance, Rds(on):0.53ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
***ure Electronics
650V, SUPERFET
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:7A; Resistance, Rds On:0.53ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:30A; No. of Pins:3; Power, Pd:83W; Voltage, Vds Max:600V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
FCP7N60
DISTI # FCP7N60OS-ND
ON SemiconductorMOSFET N-CH 600V 7A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
998In Stock
  • 5000:$0.7596
  • 3000:$0.7888
  • 1000:$0.8473
  • 100:$1.2446
  • 25:$1.4608
  • 10:$1.5480
  • 1:$1.7200
FCP7N60_F080
DISTI # FCP7N60_F080-ND
ON SemiconductorMOSFET N-CH 600V 7A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FCP7N60
    DISTI # V36:1790_06359698
    ON Semiconductor600V N-CHANNEL SUPERFET0
    • 1000000:$0.6483
    • 500000:$0.6514
    • 100000:$0.9629
    • 10000:$1.5340
    • 1000:$1.6300
    FCP7N60
    DISTI # FCP7N60
    ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP7N60)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€0.7049
    • 500:€0.7589
    • 100:€0.8219
    • 50:€0.8969
    • 25:€0.9869
    • 10:€1.0959
    • 1:€1.2339
    FCP7N60
    DISTI # FCP7N60
    ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP7N60)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 10000:$0.6870
    • 6000:$0.7044
    • 4000:$0.7135
    • 2000:$0.7227
    • 1000:$0.7275
    FCP7N60
    DISTI # 31K6750
    ON SemiconductorN CHANNEL MOSFET, 600V, 7A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.53ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Product Range:- RoHS Compliant: Yes0
    • 1000:$0.9050
    • 500:$1.0900
    • 100:$1.2300
    • 10:$1.5300
    • 1:$1.7900
    FCP7N60
    DISTI # 512-FCP7N60
    ON SemiconductorMOSFET 600V N-Channel SuperFET
    RoHS: Compliant
    925
    • 1:$1.6300
    • 10:$1.3900
    • 100:$1.1100
    • 500:$0.9730
    • 1000:$0.8060
    • 2000:$0.7510
    • 5000:$0.7230
    • 10000:$0.6950
    FCP7N60_F080
    DISTI # 512-FCP7N60-F080
    ON SemiconductorMOSFET Trans N-Ch 600V 7A 3-Pin 3+Tab
    RoHS: Compliant
    0
      FCP7N60
      DISTI # 6714755P
      ON SemiconductorMOSFET N-CHANNEL 600V 7A TO220AB, TU15
      • 500:£0.7500
      • 250:£0.9940
      • 50:£1.0940
      • 25:£1.1960
      FCP7N60Fairchild Semiconductor Corporation 100
        FCP7N60
        DISTI # 1095005
        ON SemiconductorMOSFET, N, TO-220
        RoHS: Compliant
        1930
        • 5000:$1.1200
        • 2000:$1.1600
        • 1000:$1.2400
        • 500:$1.5000
        • 100:$1.7100
        • 10:$2.1400
        • 1:$2.5100
        FCP7N60
        DISTI # 1095005
        ON SemiconductorMOSFET, N, TO-2201960
        • 500:£0.7060
        • 250:£0.7550
        • 100:£0.8050
        • 25:£1.0100
        • 5:£1.1000
        Immagine Parte # Descrizione
        SIHG35N60EF-GE3

        Mfr.#: SIHG35N60EF-GE3

        OMO.#: OMO-SIHG35N60EF-GE3

        MOSFET 600V Vds 30V Vgs TO-247AC
        IPW65R045C7FKSA1

        Mfr.#: IPW65R045C7FKSA1

        OMO.#: OMO-IPW65R045C7FKSA1

        MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7
        IRFP27N60KPBF

        Mfr.#: IRFP27N60KPBF

        OMO.#: OMO-IRFP27N60KPBF

        MOSFET RECOMMENDED ALT 844-IRFP27N60K
        UCC28C44DR

        Mfr.#: UCC28C44DR

        OMO.#: OMO-UCC28C44DR

        Switching Controllers BiCMOS Low-Power Current Mode
        UCC38C44DR

        Mfr.#: UCC38C44DR

        OMO.#: OMO-UCC38C44DR

        Switching Controllers BiCMOS Low-Power Current Mode
        CRS0805AFX-1000ELF

        Mfr.#: CRS0805AFX-1000ELF

        OMO.#: OMO-CRS0805AFX-1000ELF

        Thick Film Resistors - SMD 100 ohm 1% 1/4W TC100
        IRFP27N60KPBF

        Mfr.#: IRFP27N60KPBF

        OMO.#: OMO-IRFP27N60KPBF-VISHAY

        MOSFET N-CH 600V 27A TO-247AC
        22-01-2141

        Mfr.#: 22-01-2141

        OMO.#: OMO-22-01-2141-410

        Headers & Wire Housings 100 KK Term O/LRamp O/LRamp WO/PoR 14Ckt
        CP00101R000KE14

        Mfr.#: CP00101R000KE14

        OMO.#: OMO-CP00101R000KE14-VISHAY-DALE

        Wirewound Resistors - Through Hole 10watta 1ohms 10%
        SIHG35N60EF-GE3

        Mfr.#: SIHG35N60EF-GE3

        OMO.#: OMO-SIHG35N60EF-GE3-VISHAY

        EF Series Power MOSFET With Fast Body Diode TO-247AC, 97 m @ 10V
        Disponibilità
        Azione:
        915
        Su ordine:
        2898
        Inserisci la quantità:
        Il prezzo attuale di FCP7N60 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1,63 USD
        1,63 USD
        10
        1,39 USD
        13,90 USD
        100
        1,11 USD
        111,00 USD
        500
        0,97 USD
        486,50 USD
        1000
        0,81 USD
        806,00 USD
        2000
        0,75 USD
        1 502,00 USD
        5000
        0,72 USD
        3 615,00 USD
        10000
        0,70 USD
        6 950,00 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
        Iniziare con
        Prodotti più recenti
        • Gate Drivers
          The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
        • NCP137 700 mA LDO Regulators
          ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
        • Compare FCP7N60
          FCP7N60 vs FCP7N60C vs FCP7N60N
        • NCP114 Low Dropout Regulators
          ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
        • LC717A00AR Touch Sensor
          These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
        • FDMQ86530L Quad-MOSFET
          ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
        Top